Browse
Submit Data
Databases
API
Help

Dataset Information

10 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Analysing quantized resistance behaviour in graphene Corbino p-n junction devices.

ABSTRACT: Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 ?A to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the ? = 2 plateau (R _H ? 12906 ?) and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields.

SUBMITTER: Liu CI

PROVIDER: S-EPMC7431976 | biostudies-literature | 2020

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Fabrication of High Yield Photoluminescent Quantized Graphene Nanodiscs for Supercapacitor Devices.

Project description:In this work, we produced high yield quantized nitrogen-doped graphene nanodiscs from waste tires via a one-step process under high pressure and temperature using a homemade stainless steel reactor without using any chemical additives. Reaction temperature played a vital role in the preparation process. By increasing the temperature to a level between 600 and 1100 °C, the carbon atoms rearranged themselves to build a mixed graphene structure of nanodiscs and quantum dots. The obtained graphene exhibits excellent capacitance and long life cycle stability as an electrode in supercapacitor devices. The specific capacitance rose to 161.24 F/g with a high power density of 733.3 W/kg, and the energy density reached 27.1 Wh/kg. The finding of this work is not only to provide a solution to get rid of hazardous materials but also to give awareness of turning these hazardous materials into a cost-effective and economical nanomaterial; in another, this approach sheds light on the promising power uses of waste.

| S-EPMC8444208 | biostudies-literature

Universal quantized thermal conductance in graphene.

Project description:The universal quantization of thermal conductance provides information on a state's topological order. Recent measurements revealed that the observed value of thermal conductance of the 5 2 state is inconsistent with either Pfaffian or anti-Pfaffian model, motivating several theoretical articles. Analysis has been made complicated by the presence of counter-propagating edge channels arising from edge reconstruction, an inevitable consequence of separating the dopant layer from the GaAs quantum well and the resulting soft confining potential. Here, we measured thermal conductance in graphene with atomically sharp confining potential by using sensitive noise thermometry on hexagonal boron-nitride encapsulated graphene devices, gated by either SiO2/Si or graphite back gate. We find the quantization of thermal conductance within 5% accuracy for ν = 1 ; 4 3 ; 2 and 6 plateaus, emphasizing the universality of flow of information. These graphene quantum Hall thermal transport measurements will allow new insight into exotic systems like even-denominator quantum Hall fractions in graphene.

| S-EPMC6625820 | biostudies-literature

Influence of Humidity on Contact Resistance in Graphene Devices.

Project description:The electrical contact resistance at metal-graphene interfaces can significantly degrade the properties of graphene devices and is currently hindering the full exploitation of graphene's potential. Therefore, the influence of environmental factors, such as humidity, on the metal-graphene contact resistance is of interest for all graphene devices that operate without hermetic packaging. We experimentally studied the influence of humidity on bottom-contacted chemical-vapor-deposited (CVD) graphene-gold contacts, by extracting the contact resistance from transmission line model (TLM) test structures. Our results indicate that the contact resistance is not significantly affected by changes in relative humidity (RH). This behavior is in contrast to the measured humidity sensitivity [Formula: see text] of graphene's sheet resistance. In addition, we employ density functional theory (DFT) simulations to support our experimental observations. Our DFT simulation results demonstrate that the electronic structure of the graphene sheet on top of silica is much more sensitive to adsorbed water molecules than the charge density at the interface between gold and graphene. Thus, we predict no degradation of device performance by alterations in contact resistance when such contacts are exposed to humidity. This knowledge underlines that bottom-contacting of graphene is a viable approach for a variety of graphene devices and the back end of the line integration on top of conventional integrated circuits.

| S-EPMC6284205 | biostudies-literature

Observation of negative differential resistance in mesoscopic graphene oxide devices.

Project description:The fractions of various functional groups in graphene oxide (GO) are directly related to its electrical and chemical properties and can be controlled by various reduction methods like thermal, chemical and optical. However, a method with sufficient controllability to regulate the reduction process has been missing. In this work, a hybrid method of thermal and joule heating processes is demonstrated where a progressive control of the ratio of various functional groups can be achieved in a localized area. With this precise control of carbon-oxygen ratio, negative differential resistance (NDR) is observed in the current-voltage characteristics of a two-terminal device in the ambient environment due to charge-activated electrochemical reactions at the GO surface. This experimental observation correlates with the optical and chemical characterizations. This NDR behavior offers new opportunities for the fabrication and application of such novel electronic devices in a wide range of devices applications including switches and oscillators.

| S-EPMC5940784 | biostudies-literature

Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions.

Project description:We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ? = 2 (R H ? 12906 ?) that take the form: abRH . Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of R H. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.

| S-EPMC7067286 | biostudies-literature

Photoresponse of Graphene-Gated Graphene-GaSe Heterojunction Devices.

Project description:Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.

| S-EPMC6150651 | biostudies-literature

Analytical determination of atypical quantized resistances in graphene <i>p-n</i> junctions.

Project description:A mathematical approach is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield nonconventional, fractional multiples of the typical quantized Hall resistance at the v = 2 plateau (R H ? 12906 ?) and take the form: abRH . This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene devices with multiple source and drain terminals.

| S-EPMC7450729 | biostudies-literature

Thermionic junction devices utilizing phonon blocking.

Project description:Electrothermal elements are used in various energy harvesters, coolers, and radiation detectors. The optimal operation of these elements relies on mastering two competing boundary conditions: the maximization of the electrothermal response and the blockade of lattice (phonon) thermal conduction. In this work, we propose and demonstrate that efficient electrothermal operation and phonon blocking can be achieved in solid-state thermionic junctions, paving the way for new phonon-engineered high-efficiency refrigerators and sensors. Our experimental demonstration uses semiconductor-superconductor (Sm-S) junctions where the electrothermal response arises from the superconducting energy gap and the phonon blocking results from the acoustic transmission bottleneck at the junction. We demonstrate a cooling platform where a silicon chip, suspended only from the Sm-S junctions, is cooled by ~40% from the bath temperature. We also show how the observed effect can be used in radiation detectors and multistage electronic refrigerators suitable for cooling of quantum technology devices.

| S-EPMC7148110 | biostudies-literature

Synaptic memory devices from CoO/Nb:SrTiO3 junction.

Project description:Non-volatile memristors are promising for future hardware-based neurocomputation application because they are capable of emulating biological synaptic functions. Various material strategies have been studied to pursue better device performance, such as lower energy cost, better biological plausibility, etc. In this work, we show a novel design for non-volatile memristor based on CoO/Nb:SrTiO3 heterojunction. We found the memristor intrinsically exhibited resistivity switching behaviours, which can be ascribed to the migration of oxygen vacancies and charge trapping and detrapping at the heterojunction interface. The carrier trapping/detrapping level can be finely adjusted by regulating voltage amplitudes. Gradual conductance modulation can therefore be realized by using proper voltage pulse stimulations. And the spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in the device. Our results indicate the possibility of achieving artificial synapses with CoO/Nb:SrTiO3 heterojunction. Compared with filamentary type of the synaptic device, our device has the potential to reduce energy consumption, realize large-scale neuromorphic system and work more reliably, since no structural distortion occurs.

| S-EPMC6502371 | biostudies-literature

Force sensitivity of multilayer graphene optomechanical devices.

Project description:Mechanical resonators based on low-dimensional materials are promising for force and mass sensing experiments. The force sensitivity in these ultra-light resonators is often limited by the imprecision in the measurement of the vibrations, the fluctuations of the mechanical resonant frequency and the heating induced by the measurement. Here, we strongly couple multilayer graphene resonators to superconducting cavities in order to achieve a displacement sensitivity of 1.3?fm?Hz(-1/2). This coupling also allows us to damp the resonator to an average phonon occupation of 7.2. Our best force sensitivity, 390?zN?Hz(-1/2) with a bandwidth of 200?Hz, is achieved by balancing measurement imprecision, optomechanical damping, and measurement-induced heating. Our results hold promise for studying the quantum capacitance of graphene, its magnetization, and the electron and nuclear spins of molecules adsorbed on its surface.

| S-EPMC4980493 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data