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Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.

ABSTRACT: An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96?mA/cm2 and the open-circuit voltage is 0.28?V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.

SUBMITTER: Chang CW

PROVIDER: S-EPMC7441121 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature

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Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells.

Chang Ching-Wen CW Wadekar Paritosh V PV Huang Hui-Chun HC Chen Quark Yung-Sung QY Wu Yuh-Renn YR Chen Ray T RT Tu Li-Wei LW

Nanoscale research letters 20200820 1

An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm<sup>2</sup> and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength response ...[more]

PMID: 32816117

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