Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.

ABSTRACT: AlN nucleation layers are the basement of GaN-on-Si structures grown for light-emitting diodes, high frequency telecommunication and power switching systems. In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. AlN/Si structures are grown by Metalorganic Vapor Phase Epitaxy. Acceptor dopant in-diffusion (Al and Ga) into the Si substrate is studied by Secondary Ion Mass Spectroscopy and is mainly located in the first 200 nm beneath the interface. In this region, an acceptor concentration of a few 10¹⁸ cm^-3 is estimated from Capacitance-Voltage (C-V) measurements while the volume hole concentration of several 10¹

SUBMITTER: Bah M 

PROVIDER: S-EPMC7447785 | biostudies-literature | 2020 Aug

REPOSITORIES: biostudies-literature