Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition.

ABSTRACT: Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO3, the MoS2 memory exhibits a very comprehensive information storage cap

SUBMITTER: Yang K 

PROVIDER: S-EPMC7466503 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature