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High-speed III-V nanowire photodetector monolithically integrated on Si.

ABSTRACT: Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60?nm thin devices, with footprints as low as ~0.06 ?m2, provide an ultra-low capacitance which is key for high-speed operation. We demonstrate high-speed optical data reception with a nanostructure photodetector at 32?Gb?s-1, enabled by a 3?dB bandwidth exceeding ~25?GHz. When operated as light emitting diode, the p-i-n devices emit around 1600 nm, paving the way for future fully integrated optical links.

SUBMITTER: Mauthe S

PROVIDER: S-EPMC7486389 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature

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High-speed III-V nanowire photodetector monolithically integrated on Si.

Mauthe Svenja S Baumgartner Yannick Y Sousa Marilyne M Ding Qian Q Rossell Marta D MD Schenk Andreas A Czornomaz Lukas L Moselund Kirsten E KE

Nature communications 20200911 1

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic integration of an InGaAs nanostructure p-i-n photodetector on Si. Using free space coupling, photodetectors demonstrate a spectral response from 1200-1700 nm. The 60 nm thin devices, with footprints as lo ...[more]

PMID: 32917898

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