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Efficient MoWO₃/VO₂/MoS₂/Si UV Schottky photodetectors; MoS₂ optimization and monoclinic VO₂ surface modifications.

ABSTRACT: The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS₂) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO₂. MoWO₃/VO₂/MoS₂ photodetectors were manufactured at different sputtering times by depositing molybdenum oxide layers using a PVD technique on p-type silicon substrates followed by a sulphurization process in the CVD chamber. The high quality and the excellent structural and absorption properties of MoWO₃/VO₂/MoS₂/Si with MoS₂ deposited for 60 s enables its use as an efficient UV photodetector. The electronically coupled monoclinic VO₂ layer on MoS₂/Si causes a redshift and intensive MoS₂ Raman peaks. Interestingly, the incorporation of VO₂ dramatically changes the ratio between A-exciton (ground state exciton) and trion photoluminescence intensities of VO₂/(30 s)MoS₂/Si from ?1. By increasing the deposition time of MoS₂ from 60 to 180 s, the relative intensity of the B-exciton/A-exciton increases, whereas the lowest ratio at deposition time of 60 s refers to the high quality and low defect densities of the VO₂/(60 s)MoS₂/Si structure. Both the VO₂/(60 s)MoS₂/Si trion and A-exciton peaks have higher intensities compared with (60 s) MoS₂/Si structure. The MoWO₃/VO₂/(60 s)MoS₂/Si photodetector displays the highest photocurrent gain of 1.6, 4.32?×?10⁸ Jones detectivity, and?~?1.0?×?10¹⁰ quantum efficiency at 365 nm. Moreover, the surface roughness and grains mapping are studied and a low semiconducting-metallic phase transition is observed at?~?40 °C.

SUBMITTER: Basyooni MA

PROVIDER: S-EPMC7522211 | biostudies-literature | 2020 Sep

REPOSITORIES: biostudies-literature

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Efficient MoWO3/VO2/MoS2/Si UV Schottky photodetectors; MoS2 optimization and monoclinic VO2 surface modifications.

Basyooni Mohamed A MA Zaki Shrouk E SE Shaban Mohamed M Eker Yasin Ramazan YR Yilmaz Mucahit M

Scientific reports 20200928 1

The distinctive properties of strongly correlated oxides provide a variety of possibilities for modulating the properties of 2D transition metal dichalcogenides semiconductors; which represent a new class of superior optical and optoelectronic interfacing semiconductors. We report a novel approach to scaling-up molybdenum disulfide (MoS2) by combining the techniques of chemical and physical vapor deposition (CVD and PVD) and interfacing with a thin layer of monoclinic VO2. ...[more]

PMID: 32985575

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Project description:It is generally known that a layer of amorphous silicon oxide (SiO2) naturally exists on the surface of silicon, resulting in the growth of gallium oxide (Ga2O3) that is no longer affected by substrate crystallinity during sputtering. This work highlights the formation energy between the native amorphous nano-oxide film formed on the Si substrate and monoclinic β-Ga2O3 dominating the preferred orientation prepared for deep ultraviolet photodetectors. The latter were deposited on p-type silicon (p-Si) with (111) orientation using radio frequency sputtering at 600 °C and post rapid thermal annealing (RTA). The X-ray diffraction (XRD) results indicate both as-deposited and postannealing films with the (400) preferred orientation for a layer thickness of 100 nm. However, slight random orientation with the amorphous structure is mixed in the preferred one for the as-deposited film with a thickness of 200 nm and reduced after being annealed at 800 °C, which is observed by XRD and transmission electron microscopy. Meanwhile, thermal-induced massive twin boundaries (TBs) and stacking faults (SFs) were generated when annealed at 1000 °C, owing to the relaxation of lattice strain by the coherent interface. The interfacial bonding energy per unit area (E i) between β-Ga2O3 films with various facets ((001), (010), (100), and (2̅01)) and amorphous SiO2 was calculated using density functional theory. The E i of β-Ga2O3 (100)/SiO2 reveals the highest value (0.289 eV/Å2), which is consistent with the (100) preferred orientation of deposited films. The (100) preferred orientation is the driving force for TBs and SFs. The discrimination of responsivities and the photo/dark current contrast ratio (I ph/I dark) are inversely proportional to the amorphous structure, grain boundaries, TBs, and SFs. Therefore, optimum metal-semiconductor-metal photodetector performance is achieved for RTA-treated samples at 800 °C with an I ph/I dark of 3.91 × 102 and a responsivity of 0.702 A/W (λpeak = 230 nm) at 5 V bias for a 200 nm thin film.

Dataset Information

Efficient MoWO₃/VO₂/MoS₂/Si UV Schottky photodetectors; MoS₂ optimization and monoclinic VO₂ surface modifications.

Publications

Efficient MoWO<sub>3</sub>/VO<sub>2</sub>/MoS<sub>2</sub>/Si UV Schottky photodetectors; MoS<sub>2</sub> optimization and monoclinic VO<sub>2</sub> surface modifications.

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