Project description:In the rhizosphere, plants are exposed to a multitude of different biotic and abiotic factors, to which they respond by exuding a wide range of secondary root metabolites. So far, it has been unknown to which degree root exudate composition is species-specific and is affected by land use, the local impact and local neighborhood under field conditions. In this study, root exudates of 10 common grassland species were analyzed, each five of forbs and grasses, in the German Biodiversity Exploratories using a combined phytometer and untargeted liquid chromatography-mass spectrometry (LC-MS) approach. Redundancy analysis and hierarchical clustering revealed a large set of semi-polar metabolites common to all species in addition to species-specific metabolites. Chemical richness and exudate composition revealed that forbs, such as Plantago lanceolata and Galium species, exuded more species-specific metabolites than grasses. Grasses instead were primarily affected by environmental conditions. In both forbs and grasses, plant functional traits had only a minor impact on plant root exudation patterns. Overall, our results demonstrate the feasibility of obtaining and untargeted profiling of semi-polar metabolites under field condition and allow a deeper view in the exudation of plants in a natural grassland community.
Project description:Carrier transport issues in a (11-22) semi-polar GaN based white light emitting diode (consisting of yellow and blue emissions) have been investigated by detailed simulations, demonstrating that the growth order of yellow and blue InGaN quantum wells plays a critically important role in achieving white emission. The growth order needs to be yellow InGaN quantum wells first and then a blue InGaN quantum well after the growth of n-type GaN. The fundamental reason is due to the poor hole concentration distribution across the whole InGaN quantum well region. In order to effectively capture holes in both the yellow InGaN quantum wells and the blue InGaN quantum well, a thin GaN spacer has been introduced prior to the blue InGaN quantum well. The detailed simulations of the band diagram and the hole concentration distribution across the yellow and the blue quantum wells have been conducted, showing that the thin GaN spacer can effectively balance the hole concentration between the yellow and the blue InGaN quantum wells, eventually determining their relative intensity between the yellow and the blue emissions. Based on this simulation, we have demonstrated a monolithically multi-colour LED grown on our high quality semi-polar (11-22) GaN templates.
Project description:Electroluminescence polarization measurements have been performed on a series of semi-polar InGaN light emitting diodes (LEDs) grown on semi-polar (11-22) templates with a high crystal quality. The emission wavelengths of these LEDs cover a wide spectral region from 443 to 555?nm. A systematic study has been carried out in order to investigate the influence of both indium content and injection current on polarization properties, where a clear polarization switching at approximately 470?nm has been observed. The shortest wavelength LED (443?nm) exhibits a positive 0.15 polarization degree, while the longest wavelength LED (555?nm) shows a negative -0.33 polarization degree. All the longer wavelength LEDs with an emission wavelength above 470?nm exhibit negative polarization degrees, and they further demonstrate that the dependence of polarization degree on injection current enhances with increasing emission wavelength. Moreover, the absolute value of the polarization degree decreases with increasing injection current. In contrast, the polarization degree of the 443?nm blue LED remains constant with changing injection current. This discrepancy can be attributed to a significant difference in the density of states (DOS) of the valence subbands.
Project description:The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.
Project description:Non-polar (11-20) GaN with significantly improved crystal quality has been achieved by means of overgrowth on regularly arrayed micro-rod templates on sapphire in comparison with standard non-polar GaN grown without any patterning processes on sapphire. Our overgrown GaN shows massively reduced linewidth of X-ray rocking curves with typical values of 270?arcsec along the [0001] direction and 380?arcsec along the [1-100] direction, which are among the best reports. Detailed X-ray measurements have been performed in order to investigate strain relaxation and in-plane strain distribution. The study has been compared with the standard non-polar GaN grown without any patterning processes and an extra non-polar GaN sample overgrown on a standard stripe-patterned template. The standard non-polar GaN grown without involving any patterning processes typically exhibits highly anisotropic in-plane strain distribution, while the overgrown GaN on our regularly arrayed micro-rod templates shows a highly isotropic in-plane strain distribution. Between them is the overgrown non-polar GaN on the stripe-patterned template. The results presented demonstrate the major advantages of using our regularly arrayed micro-rod templates for the overgrowth of non-polar GaN, leading to both high crystal quality and isotropic in-plane strain distribution, which is important for the further growth of any device structures.
Project description:Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of AlN based DUV LEDs dramatically. The internal fields can be strongly reduced by changing the epitaxial growth direction from the conventional polar c-direction into less polar crystal directions. Twinned crystal is a crystal consisting of two or more domains with the same crystal lattice and composition but different crystal orientations. In other words, twins can be induced to change crystal directions. In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional methods and it has huge prospect to develop high-quality semi-polar AlN.
Project description:Grapevine (Vitis vinifera L.) seeds are rich in polyphenols including proanthocyanidins, molecules with a variety of biological effects including anticancer action. We have previously reported that the grape seed semi-polar extract of Aglianico cultivar (AGS) was able to induce apoptosis and decrease cancer properties in different mesothelioma cell lines. Concomitantly, this extract resulted in enriched oligomeric proanthocyanidins which might be involved in determining the anticancer activity. Through transcriptomic and metabolomic analyses, we investigated in detail the anticancer pathway induced by AGS. Transcriptomics analysis and functional annotation allowed the identification of the relevant causative genes involved in the apoptotic induction following AGS treatment. Subsequent biological validation strengthened the hypothesis that MDM2 could be the molecular target of AGS and that it could act in both a p53-dependent and independent manner. Finally, AGS significantly inhibited tumor progression in a xenograft mouse model of mesothelioma, confirming also in vivo that MDM2 could act as molecular player responsible for the AGS antitumor effect. Our findings indicated that AGS, exerting a pro-apoptotic effect by hindering MDM2 pathway, could represent a novel source of anticancer molecules.
Project description:We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template. The patterned Si nanowire-template is fabricated using metal-assisted chemical-etching, and the conformal growth of the GaN/InGaN multiple-quantum-well (MQW) coaxial nanowires is conducted using metal-organic-chemical-vapor-deposition by the two-step growth approach of vapor-liquid-solid for the GaN core and vapor-solid for the GaN/InGaN MQW shells. The growth directions of the GaN nanowires are confirmed by transmission electron microscopy and selected area electron diffraction patterns. The emission of the GaN/InGaN MQW nanowire is tuned from 440 nm to 505 nm by increasing the InGaN quantum-well thickness. The carrier dynamics were evaluated by performing temperature-dependent time-resolved photoluminescence measurement, and the radiative lifetime of photogenerated electron-hole pairs was found to range from 30 to 35 ps. A very high IQE of 56% was measured due to the suppressed quantum-confined Stark effect which was enabled by the semi-polar growth facet of the GaN/InGaN MQWs. The demonstration of the growth of the hybrid 3-D hierarchical GaN/InGaN MQW nanowires provides a seamless platform for a broad range of multifunctional optical and electronic applications.
Project description:Age-associated neurodegenerative changes, including amyloid β (Aβ) plaques, neurofibrillary tangles (NFTs), and amyloid angiopathy comparable to those seen in the brains of human patients with Alzheimer's disease (AD), have been reported in the brains of aged bears. However, the significance of these findings in bears is unclear due to the difficulty in assessing cognitive impairment and the lack of standardized approaches for the semiquantitative evaluation of Aβ plaques and NFTs. In this study, we evaluate the neuropathologic changes in archival brain tissue of 2 aged polar bears (Ursus maritimus, ages 28 and 37) using the National Institute of Aging-Alzheimer Association (NIA-AA) consensus guidelines for the neuropathologic assessment of Alzheimer's Disease (AD). Both bears had an Aβ (A) score of 3 of 3, Braak stage (B score) of 2 of 3, and neuritic plaque (C) score of 3 of 3. These findings are consistent with the neurodegenerative changes observed in brains of patients with AD. The application of NIA-AA consensus guidelines, as applied to the neuropathologic assessment of the aged bears in this report, demonstrates the use of standardized semiquantitative assessment systems for comparative, translational studies of aging in a vulnerable wildlife species.
Project description:As a crucial industrial process for the production of bulk and fine chemicals, semi-hydrogenation of alkynes faces the trade-off between activity and selectivity due to undesirable over-hydrogenation. By breaking the energy linear scaling relationships, we report an efficient additive-free WO3-based single-atom Pd catalytic system with a vertical size effect of hydrogen spillover. Hydrogen spillover induced hydrophilic polar layer (HPL) with limited thickness on WO3-based support exhibits unconventional size effect to Pd site, in which over-hydrogenation is greatly suppressed on Pd1 site due to the polar repulsive interaction between HPL and nonpolar C=C bonds, whereas this is invalid for Pd nanoparticles with higher altitudes. By further enhancing the HPL through Mo doping, activated Pd1/MoWO3 achieves recorded performance of 98.4% selectivity and 10200 h-1 activity for semi-hydrogenation of 2-methyl-3-butyn-2-ol, 26-fold increase in activity of Lindlar catalyst. This observed vertical size effect of hydrogen spillover offers broad potential in catalytic performance regulation.