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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165?GHz.

ABSTRACT: A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2? diameter direct-bandgap 5?µm silicon doped 105 ?-cm GaN on 434?µm sapphire is a commercial sample and was mounted in the path of collimated BWO generated millimeter wave beam with spot size ?3?mm and rotated 64.5° to millimeter wave reflected energy into an antenna fed zero-bias Schottky barrier diode (ZBD), a negative polarity detector with responsivity 3.6?V/mW. Data obtained pertain to photon energies between 400 and 700 µeV (107.35-165?GHz). Data contains the 30-sample average and respective standard deviations for reference (mirror) and N-GaN reflected voltages. Anomalies in d.c. reflection coefficients (based on the raw data) are identified for users.

SUBMITTER: Roy B

PROVIDER: S-EPMC7581872 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz.

Roy Biswadev B Wu Marvin H MH Vlahovic Branislav B

Data in brief 20201017

A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2″ diameter direct-bandgap 5 µm silicon doped 10<sup>5</sup> Ω-cm GaN on 434 µm sapphire is a commercial sample and was mounted in the path of collimated BWO generated millimeter wave beam with spot size ∼3 mm and rotated 64.5° to millimeter wave reflected energy into an ...[more]

PMID: 33117865

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