Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack.

ABSTRACT: In this work, we propose three types of resistive switching behaviors by controlling operation conditions. We confirmed well-known filamentary switching in Al2O3-based resistive switching memory using the conventional device working operation with a forming process. Here, filamentary switching can be classified into two types depending on the compliance current. On top of that, the homogeneous switching is obtained by using a negative differential resistance effect before the forming or setting process in a negative bias. The variations of the low-resistance and high-resistance states in the homogeneous switching are comparable to the filamentary switching cases. However, the drift characteristics of the low-resistance and high-resistance states in the homogeneous switching are unstable wi

SUBMITTER: Ryu H 

PROVIDER: S-EPMC7603159 | biostudies-literature | 2020 Oct

REPOSITORIES: biostudies-literature