Browse
Submit Data
Databases
API
Help

Dataset Information

34 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Rapid Thermal Annealing of Double Perovskite Thin Films Formed by Polymer Assisted Deposition.

ABSTRACT: The annealing process is an important step common to epitaxial films prepared by chemical solution deposition methods. It is so because the final microstructure of the films can be severely affected by the precise features of the thermal processing. In this work we analyze the structural and magnetic properties of double perovskite La2CoMnO6 and La2NiMnO6 epitaxial thin films prepared by polymer-assisted deposition (PAD) and crystallized by rapid thermal annealing (RTA). It is found that samples prepared by RTA have similar values of saturation magnetization and Curie temperature to their counterparts prepared by using conventional thermal annealing (CTA) processes, thus indicating low influence of the heating rates on the B-B' site cationic ordering of the A2BB'O6 double perovskite structure. However, a deeper analysis of the magnetic behavior suggested some differences in the actual microstructure of the films.

SUBMITTER: Wang H

PROVIDER: S-EPMC7662915 | biostudies-literature | 2020 Nov

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Rapid Thermal Annealing of Double Perovskite Thin Films Formed by Polymer Assisted Deposition.

Wang Hailin H Frontera Carlos C Martínez Benjamín B Mestres Narcís N

Materials (Basel, Switzerland) 20201104 21

The annealing process is an important step common to epitaxial films prepared by chemical solution deposition methods. It is so because the final microstructure of the films can be severely affected by the precise features of the thermal processing. In this work we analyze the structural and magnetic properties of double perovskite La2CoMnO6 and La2NiMnO6 epitaxial thin films prepared by polymer-assisted deposition (PAD) and crystallized by rapid therm ...[more]

PMID: 33158262

Similar Datasets

High-Speed Vapor Transport Deposition of Perovskite Thin Films.

Project description:Intensive research of hybrid metal-halide perovskite materials for use as photoactive materials has resulted in an unmatched increase in the power conversion efficiency of perovskite photovoltaics (PVs) over the last couple of years. Now that lab-fabricated perovskite devices rival the efficiency of silicon PVs, the next challenge of scalable mass manufacturing of large perovskite PV panels remains to be solved. For that purpose, it is still unclear which manufacturing method will provide the lowest processing cost and highest quality solar cells. Vapor deposition has been proven to work well for perovskites as a controllable and repeatable thin-film deposition technique but with processing speeds currently too slow to adequately lower the production costs. Addressing this challenge, in the present work, we demonstrate a high-speed vapor transport processing technique in a custom-built reactor that produces high-quality perovskite films with unprecedented deposition speed exceeding 1 nm/s, over 10× faster than previous vapor deposition demonstrations. We show that the semiconducting perovskite films produced with this method have excellent crystallinity and optoelectronic properties with 10 ns charge carrier lifetime, enabling us to fabricate the first photovoltaic devices made by perovskite vapor transport deposition. Our experiments are guided by computational fluid dynamics simulations that also predict that this technique could lead to deposition rates on the order of micrometers per second. This, in turn, could enable cost-effective scalable manufacturing of the perovskite-based solar technologies.

| S-EPMC6748557 | biostudies-literature

Ion Beam Assisted Deposition of Thin Epitaxial GaN Films.

Project description:The assistance of thin film deposition with low-energy ion bombardment influences their final properties significantly. Especially, the application of so-called hyperthermal ions (energy <100 eV) is capable to modify the characteristics of the growing film without generating a large number of irradiation induced defects. The nitrogen ion beam assisted molecular beam epitaxy (ion energy <25 eV) is used to deposit GaN thin films on (0001)-oriented 6H-SiC substrates at 700 °C. The films are studied in situ by reflection high energy electron diffraction, ex situ by X-ray diffraction, scanning tunnelling microscopy, and high-resolution transmission electron microscopy. It is demonstrated that the film growth mode can be controlled by varying the ion to atom ratio, where 2D films are characterized by a smooth topography, a high crystalline quality, low biaxial stress, and low defect density. Typical structural defects in the GaN thin films were identified as basal plane stacking faults, low-angle grain boundaries forming between w-GaN and z-GaN and twin boundaries. The misfit strain between the GaN thin films and substrates is relieved by the generation of edge dislocations in the first and second monolayers of GaN thin films and of misfit interfacial dislocations. It can be demonstrated that the low-energy nitrogen ion assisted molecular beam epitaxy is a technique to produce thin GaN films of high crystalline quality.

| S-EPMC5551733 | biostudies-other

Dislocation-Assisted Quasi-Two-Dimensional Semiconducting Nanochannels Embedded in Perovskite Thin Films.

Project description:Defect engineering in perovskite thin films has attracted extensive attention recently due to the films' atomic-scale modification, allowing for remarkable flexibility to design novel nanostructures for next generation nanodevices. However, the defect-assisted three-dimensional nanostructures in thin film matrices usually has large misfit strain and thus causes unstable thin film structures. In contrast, defect-assisted one- or two-dimensional nanostructures embedded in thin films can sustain large misfit strains without relaxation, which make them suitable for defect engineering in perovskite thin films. Here, we reported the fabrication and characterization of edge-type misfit dislocation-assisted two-dimensional BiMnOx nanochannels embedded in SrTiO3/La0.7Sr0.3MnO3/TbScO3 perovskite thin films. The nanochannels are epitaxially grown from the surrounding films without noticeable misfit strain. Diode-like current rectification was spatially observed at nanochannels due to the formation of Schottky junctions between BiMnOx nanochannels and conducting La0.7Sr0.3MnO3 thin films. Such atomically scaled heterostructures constitute more flexible ultimate functional units for nanoscale electronic devices.

| S-EPMC10311590 | biostudies-literature

Thermal assisted oxygen annealing for high efficiency planar CH₃NH₃PbI₃ perovskite solar cells.

Project description:We report investigations on the influences of post-deposition treatments on the performance of solution-processed methylammonium lead triiodide (CH₃NH₃PbI₃)-based planar solar cells. The prepared films were stored in pure N₂ at room temperature or annealed in pure O₂ at room temperature, 45°C, 65°C and 85°C for 12 hours prior to the deposition of the metal electrodes. It is found that annealing in O₂ leads to substantial increase in the power conversion efficiencies (PCEs) of the devices. Furthermore, strong dependence on the annealing temperature for the PCEs of the devices suggests that a thermally activated process may underlie the observed phenomenon. It is believed that the annealing process may facilitate the diffusion of O₂ into the spiro-MeOTAD for inducing p-doping of the hole transport material. Furthermore, the process can result in lowering the localized state density at the grain boundaries as well as the bulk of perovskite. Utilizing thermal assisted O₂ annealing, high efficiency devices with good reproducibility were attained. A PCE of 15.4% with an open circuit voltage (VOC) 1.04 V, short circuit current density (JSC) 23 mA/cm(2), and fill factor 0.64 had been achieved for our champion device.

| S-EPMC4208060 | biostudies-literature

Vapor-phase-synthesized fluoroacrylate polymer thin films: thermal stability and structural properties.

Project description:In this study, the thermal, chemical and structural stability of 1H,1H,2H,2H-perfluorodecyl acrylate polymers (p-PFDA) synthetized by initiated chemical vapor deposition (iCVD) were investigated. PFDA polymers are known for their interesting crystalline aggregation into a lamellar structure that induces super-hydrophobicity and oleophobicity. Nevertheless, when considering applications which involve chemical, mechanical and thermal stresses, it is important to know the limits under which the crystalline aggregation and the resulting polymer properties are stable. For this, chemical, morphological and structural properties upon multiple heating/cooling cycles were investigated both for linear PFDA polymers and for differently strong cross-linked alterations thereof. Heat treatment leaves the chemical composition of the linear PFDA polymers largely unchanged, while a more ordered crystalline structure with smoother morphology is observed. At the same time, the hydrophobicity and the integrity of the polymer deteriorate upon heating. The integrity and hydrophobicity of cross-linked p-PFDA films was preserved likely because of the lack of internal strain due to the coexistence of both crystalline and amorphous phases. The possibility to finely tune the degree of cross-linking can therefore expand the application portfolio in which PFDA polymers can be utilized.

| S-EPMC5433210 | biostudies-literature

Methylamine-assisted growth of uniaxial-oriented perovskite thin films with millimeter-sized grains.

Project description:Defects from grain interiors and boundaries of perovskite films cause significant nonradiative recombination energy loss, and thus perovskite films with controlled crystallinity and large grains is critical for improvement of both photovoltaic performance and stability for perovskite-based solar cells. Here, a methylamine (MA0) gas-assisted crystallization method is developed for fabrication of methylammonium lead iodide (MAPbI3) perovskite films. In the process, the perovskite film is formed via controlled release of MA0 gas molecules from a liquid intermediate phase MAPbI3·xMA0. The resulting perovskite film comprises millimeter-sized grains with (110)-uniaxial crystallographic orientation, exhibiting much low trap density, long carrier lifetime, and excellent environmental stability. The corresponding perovskite solar cell exhibits a power conversion efficiency (PCE) of ~ 21.36%, which is among the highest reported for MAPbI3-based devices. This method provides important progress towards the fabrication of high-quality perovskite thin films for low-cost, highly efficient and stable perovskite solar cells.

| S-EPMC7648077 | biostudies-literature

Radio Frequency Magnetron Sputtering Deposition of TiO2 Thin Films and Their Perovskite Solar Cell Applications.

Project description:In this work, we report a physical deposition based, compact (cp) layer synthesis for planar heterojunction perovskite solar cells. Typical solution-based synthesis of cp layer for perovskite solar cells involves low-quality of thin films, high-temperature annealing, non-flexible devices, limitation of large-scale production and that the effects of the cp layer on carrier transport have not been fully understood. In this research, using radio frequency magnetron sputtering (RFMS), TiO2 cp layers were fabricated and the thickness could be controlled by deposition time; CH3NH3PbI3 films were prepared by evaporation &immersion (E &I) method, in which PbI2 films made by thermal evaporation technique were immersed in CH3NH3I solution. The devices exhibit power conversion efficiency (PCE) of 12.1% and the photovoltaic performance can maintain 77% of its initial PCE after 1440 h. The method developed in this study has the capability of fabricating large active area devices (40 × 40 mm(2)) showing a promising PCE of 4.8%. Low temperature and flexible devices were realized and a PCE of 8.9% was obtained on the PET/ITO substrates. These approaches could be used in thin film based solar cells which require high-quality films leading to reduced fabrication cost and improved device performance.

| S-EPMC4668551 | biostudies-literature

Femtosecond Double-Pulse Laser Ablation and Deposition of Co-Doped ZnS Thin Films.

Project description:Nanostructured thin films of Co-doped zinc sulfide were synthesized through femtosecond pulsed laser deposition. The scheme involved ablation of physically mixed Co and ZnS with pairs of ultrashort pulses separated in time in the 0-300 ps range. In situ monitorization of the deposition process was carried out through a simultaneous reflectivity measurement. The crystallinity of generated nanoparticles and the inclusion of Co in the ZnS lattice is demonstrated by transmission electron microscopy and energy dispersive X-ray microanalysis (TEM-EDX) characterization. Surface morphology, Raman response, and photoluminescence of the films have also been assessed. The role of interpulse temporal separation is most visible in the thickness of the films obtained at the same total fluence, with much thicker films deposited with short delays than with individual uncoupled pulses. The proportion of Co in the synthesized doped ZnS nanoparticles is found to be substantially lower than the original proportion, and practically independent on interpulse delay.

| S-EPMC7698319 | biostudies-literature

Enhanced Photoluminescence of Hydrogenated Amorphous Silicon Carbide Thin Films by Means of a Fast Thermal Annealing Process.

Project description:In this paper, the photoluminescence (PL) of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) thin films obtained by Plasma Enhancement Chemical Vapor Deposition (PECVD) is reported. Strong PL is obtained after a fast annealing process for 60 s at temperatures of 200, 400, 600, and 800 °C. The thin films are characterized using Fourier Transform Infrared spectroscopy (FTIR), PL spectroscopy, and Energy-Dispersive X-ray Spectroscopy (EDS). According to the results of the structural characterization, it is deduced that a structural rearrangement of the amorphous matrix is carried out during the fast annealing process, which results in different degrees of oxidation on the a-Si1-xCx:H films. The PL peak position shifts towards higher energies as the temperature increases. The sample deposited with a silane/methane flux ratio of 37.5 at an Radio Frequency (RF) power of 6 W experiences an increase in PL intensity of more than nine times, with a displacement in the peak position from 2.5 eV to 2.87 eV, at 800 °C. From the PL analysis, we observe two emission bands: one centered in the near infrared and other in the visible range (with a blue peak). This study opens the possibility to use such thin films in the development of optoelectronics devices, with potential for application in solar cells.

| S-EPMC7321575 | biostudies-literature

Structure evolution during deposition and thermal annealing of amorphous carbon ultrathin films investigated by molecular dynamics simulations.

Project description:The evolution of the structure of amorphous carbon (a-C) films during deposition and thermal annealing is of significant interest from both the materials science and application perspectives. However, despite the voluminous literature of studies dealing with the deposition and physical properties of a-C films, basic understanding of the structure evolution due to phase change during film growth and heating is fairly sparse and empirical, presumably due to the lack of high-resolution instruments that can probe structural changes at the atomic and molecular levels in real time. Molecular dynamics (MD) is a powerful computational method for studying atomic/molecular-scale movement and interactions. Thus, the objective of this study was to perform MD simulations that provide insight into changes in the structure of ultrathin a-C films during deposition and annealing. Simulation results reveal a multi-layer film structure, even for a-C films as thin as ~20?Å, the existence of a deposition energy that yields a-C films with the highest sp3 content, the transient and steady-state stages of the structure evolution during annealing at different temperatures, and the changes in the hybridization state (mainly in the bulk layer) encountered during annealing at elevated temperatures. The MD results of this study are of particular importance to applications where the deposition conditions and operation temperature affect the structure and, in turn, the physical properties of ultrathin a-C films used as protective overcoats.

| S-EPMC7229151 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data