Browse
Submit Data
Databases
API
Help

Dataset Information

32 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Re-evaluation of the Energy Density Properties of VDF Ferroelectric Thin-Film Capacitors.

ABSTRACT: Large dielectric constants and small remanent polarization of the relaxor-ferroelectric (RFE) polymers are favored for energy-harvesting applications. Here, the energy harvesting of RFE thin films of vinylidene fluoride (VDF)-based terpolymers were re-evaluated. VDF-based terpolymers with trifluoroethylene (TrFE) and chlorofluoroethylene (CFE), CFE terpolymer, and those with TrFE and chlorotrifluoroethylene were used. Thermally annealed CFE terpolymer exhibited an energy density of 8.3 J cm^-3 and an energy efficiency of 82% at a field of 280 MV m^-1. The high-energy efficiency was related to the narrow bipolar hysteresis of displacement (D)-electric field (E) of the CFE terpolymer film. This narrow D-E hysteresis was a sum of the unipolar hysteresis directed toward the positive electric field region and that toward the negative electric field region, which suggested antiferroelectric-like behavior.

SUBMITTER: Tsutsumi N

PROVIDER: S-EPMC7711697 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Re-evaluation of the Energy Density Properties of VDF Ferroelectric Thin-Film Capacitors.

Tsutsumi Naoto N Tanaka Rikiya R Kinashi Kenji K Sakai Wataru W

ACS omega 20201116 47

Large dielectric constants and small remanent polarization of the relaxor-ferroelectric (RFE) polymers are favored for energy-harvesting applications. Here, the energy harvesting of RFE thin films of vinylidene fluoride (VDF)-based terpolymers were re-evaluated. VDF-based terpolymers with trifluoroethylene (TrFE) and chlorofluoroethylene (CFE), CFE terpolymer, and those with TrFE and chlorotrifluoroethylene were used. Thermally annealed CFE terpolymer exhibited an energy density of 8.3 J cm ...[more]

PMID: 33283095

Similar Datasets

Anti-Ferroelectric Ceramics for High Energy Density Capacitors.

Project description:With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE) display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

| S-EPMC5458845 | biostudies-other

On the switching dynamics of epitaxial ferroelectric CeO2-HfO2 thin film capacitors.

Project description:Epitaxial layers of ferroelectric orthorhombic HfO2 are frequently investigated as model systems for industrially more relevant polycrystalline films. The recent success in stabilizing the orthorhombic phase in the solid-solution cerium oxide - hafnium oxide system allows detailed investigations of external influences during fabrication. This report analyzes the ferroelectric properties of two thin film capacitors, which were post-deposition annealed in N2 and O2 atmospheres to achieve the orthorhombic phase after room temperature deposition. The samples, which exhibit very similar constituent phase, appear identical in conventional polarization-field hysteresis measurements. However, a significant switching speed difference is observed in pristine devices. Continued field cycling reduces the difference. Deeper analysis of switching transients based on the Nucleation Limited Switching model suggests that the O2 heat treatment atmosphere results in an altered oxygen vacancy profile, which is reverted during ferroelectric cycling.

| S-EPMC9751238 | biostudies-literature

Thin film ferroelectric photonic-electronic memory

Project description: Not available

| S-EPMC11344043 | biostudies-literature

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors.

Project description:The parallel-plate capacitor equation is widely used in contemporary material research for nanoscale applications and nanoelectronics. To apply this equation, flat and smooth electrodes are assumed for a capacitor. This essential assumption is often violated for thin-film capacitors because the formation of nanoscale roughness at the electrode interface is very probable for thin films grown via common deposition methods. In this work, we experimentally and theoretically show that the electrical capacitance of thin-film capacitors with realistic interface roughness is significantly larger than the value predicted by the parallel-plate capacitor equation. The degree of the deviation depends on the strength of the roughness, which is described by three roughness parameters for a self-affine fractal surface. By applying an extended parallel-plate capacitor equation that includes the roughness parameters of the electrode, we are able to calculate the excess capacitance of the electrode with weak roughness. Moreover, we introduce the roughness parameter limits for which the simple parallel-plate capacitor equation is sufficiently accurate for capacitors with one rough electrode. Our results imply that the interface roughness beyond the proposed limits cannot be dismissed unless the independence of the capacitance from the interface roughness is experimentally demonstrated. The practical protocols suggested in our work for the reliable use of the parallel-plate capacitor equation can be applied as general guidelines in various fields of interest.

| S-EPMC5569667 | biostudies-literature

Self-Polarized P(VDF-TrFE)/Carbon Black Composite Piezoelectric Thin Film.

Project description:Self-polarized energy harvesting materials have seen increasing research interest in recent years owing to their simple fabrication method and versatile application potential. In this study, we systematically investigated self-polarized P(VDF-TrFE)/carbon black (CB) composite thin films synthesized on flexible substrates, with the CB content varying from 0 to 0.6 wt.% in P(VDF-TrFE). The presence of -OH functional groups on carbon black significantly enhances its crystallinity, dipolar orientation, and piezoelectric performance. Multiple characterization techniques were used to investigate the crystalline quality, chemical structure, and morphology of the composite P(VDF-TrFE)/CB films, which indicated no significant changes in these parameters. However, some increase in surface roughness was observed when the CB content increased. With the application of an external force, the piezoelectrically generated voltage was found to systematically increase with higher CB content, reaching a maximum value at 0.6 wt.%, after which the sample exhibited low resistance. The piezoelectric voltage produced by the unpoled 0.6 wt.% CB composite film significantly exceeded the unpoled pure P(VDF-TrFE) film when subjected to the same applied strain. Furthermore, it exhibited exceptional stability in the piezoelectric voltage over time, exceeding the output voltage of the poled pure P(VDF-TrFE) film. Notably, P(VDF_TrFE)/CB composite-based devices can be used in energy harvesting and piezoelectric strain sensing to monitor human motions, which has the potential to positively impact the field of smart wearable devices.

| S-EPMC10610547 | biostudies-literature

Structural Tailing and Pyroelectric Energy Harvesting of P(VDF-TrFE) and P(VDF-TrFE-CTFE) Ferroelectric Polymer Blends.

Project description:The copolymer P(VDF-TrFE) is a normal ferroelectric because the bulky TrFE monomer improves its crystalline chain structure, while the terpolymer P(VDF-TrFE-CTFE) is a relaxor ferroelectric because the third monomer CTFE makes it amorphous. Herein, in order to induce a crystalline beta phase in the terpolymer, we blended a small amount of crystalline P(VDF-TrFE) into P(VDF-TrFE-CTFE) and investigated the effect of blending on the pyroelectric energy harvesting (PyEH) properties. The polarization-electric field hysteresis loops at different temperatures and energy densities were investigated. The PyEH energy density (N D) is compared with the electrical energy density (U E). The U E and N D at the ferroelectric-paraelectric transition temperature for the ? = 0.1 blend are reported as 3.18 and 5.04 J/cm3, respectively, which are higher than the other polymer blends. Interestingly, the N D of the ? = 0.9 blend is found to be 3.44 J/cm3 when operated at lower and higher temperatures, that is, at T L = 25 °C and T H = 40 °C, respectively, which is the highest possible energy density at the lowest possible transition temperature for the polymer blends.

| S-EPMC7301377 | biostudies-literature

Enhanced Power Generation by Piezoelectric P(VDF-TrFE)/rGO Nanocomposite Thin Film

Project description:In this study we fabricated a piezoelectric nanogenerator (PENG) of nanocomposite thin film comprising a conductive nanofiller of reduced graphene oxide (rGO) dispersed in a poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) matrix that was anticipated to show enhanced energy harvest performance. For the film preparation we employed the Langmuir-Schaefer (LS) technique to provide direct nucleation of the polar β-phase without any traditional polling or annealing process. We prepared five PENGs consisting of the nanocomposite LS films with different rGO contents in the P(VDF-TrFE) matrix and optimized their energy harvest performance. We found that the rGO-0.002 wt% film yielded the highest peak-peak open-circuit voltage (VOC) of 88 V upon bending and releasing at 2.5 Hz frequency, which was more than two times higher than the pristine P(VDF-TrFE) film. This optimized performance was explained by increased β-phase content, crystallinity, and piezoelectric modulus, and improved dielectric properties, based on scanning electron microscopy (SEM), Fourier transform infrared (FT-IR), x-ray diffraction (XRD), piezoelectric modulus, and dielectric property measurement results. This PENG with enhanced energy harvest performance has great potential in practical applications for low energy power supply in microelectronics such as wearable devices.

| S-EPMC10005479 | biostudies-literature

Photonic integration based on a ferroelectric thin-film platform.

Project description:Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitaxially-grown by using a modified sol-gel method, and it exhibits large electro-optic coefficients (>120?pm/V) and low propagation loss (1.1?dB/cm). The optical modulator, a Mach-Zehnder type, exhibited a half-wave voltage (V?) of 6.0?V (V?L?=?4.5 Vcm) and optical modulation up to 56?Gb/s. Also, the VOA (with attenuation range of more than 26?dB) was successfully integrated with the modulator. As a result, it is concluded that the developed ferroelectric platform can pave the way for photonic integration.

| S-EPMC6851366 | biostudies-literature

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate.

Project description:Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8-210 μA/cm²) and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm -2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8-15 μC/cm². When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10-2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10-3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

| S-EPMC5448953 | biostudies-other

Quinuclidinium salt ferroelectric thin-film with duodecuple-rotational polarization-directions.

Project description:Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.

| S-EPMC5382275 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data