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Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS2.


ABSTRACT: Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS2. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |?(3)eff| tuning from (?12.0 to 5.45) × 10-18 m2/V2. The tunability of the effective second-order optical nonlinearity |?(2)eff| at 440 nm C-exciton resonance wavelength is also demonstrated from (?11.6 to 7.40) × 10-9 m/V with sum-frequency generation. Such a large tunability in optical nonlinearities arises from the strong excitonic charging effect in monolayer transition-metal dichalcogenides, which allows for the electrical control of the interband excitonic transitions and thus nonlinear optical responses for future on-chip nonlinear optoelectronics.

SUBMITTER: Dai Y 

PROVIDER: S-EPMC7735744 | biostudies-literature | 2020 Jul

REPOSITORIES: biostudies-literature

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Electrical Control of Interband Resonant Nonlinear Optics in Monolayer MoS<sub>2</sub>.

Dai Yunyun Y   Wang Yadong Y   Das Susobhan S   Xue Hui H   Bai Xueyin X   Hulkko Eero E   Zhang Guangyu G   Yang Xiaoxia X   Dai Qing Q   Sun Zhipei Z  

ACS nano 20200707 7


Monolayer transition-metal dichalcogenides show strong optical nonlinearity with great potential for various emerging applications. Here we demonstrate the gate-tunable interband resonant four-wave mixing and sum-frequency generation in monolayer MoS<sub>2</sub>. Up to 80% modulation depth in four-wave mixing is achieved when the generated signal is resonant with the A exciton at room temperature, corresponding to an effective third-order optical nonlinearity |χ<sup>(3)</sup><sub>eff</sub>| tuni  ...[more]

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