Browse
Submit Data
Databases
API
Help

Dataset Information

14 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Hydrogen-Assisted Fast Growth of Large Graphene Grains by Recrystallization of Nanograins.

ABSTRACT: Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ?160 ?m grow by recrystallization of nanograins, but ?1% areal coverage of nanograins remains with 28-30° misorientation angles. Our findings will provide insights into mass production of high-quality graphene.

SUBMITTER: Lee H

PROVIDER: S-EPMC7745212 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Hydrogen-Assisted Fast Growth of Large Graphene Grains by Recrystallization of Nanograins.

Lee Hyunjong H Baek Jinwook J Dae Kyun Seong KS Jeon Seokwoo S Yuk Jong Min JM

ACS omega 20201202 49

Chemical vapor deposition has been highlighted as a promising tool for facile graphene growth in a large area. However, grain boundaries impose detrimental effects on the mechanical strength or electrical mobility of graphene. Here, we demonstrate that high-pressure hydrogen treatment in the preannealing step plays a key role in fast and large grain growth and leads to the successful synthesis of large grain graphene in 10 s. Large single grains with a maximum size of ∼160 μm grow by recrystalli ...[more]

PMID: 33344801

Similar Datasets

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride.

Project description:The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(-1) or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.

| S-EPMC4382696 | biostudies-literature

Visualizing copper assisted graphene growth in nanoscale.

Project description:Control synthesis of high quality large-area graphene on transition metals (TMs) by chemical vapor deposition (CVD) is the most fascinating approach for practical device applications. Interaction of carbon atoms and TMs is quite critical to obtain graphene with precise layer number, crystal size and structure. Here, we reveal a solid phase reaction process to achieve Cu assisted graphene growth in nanoscale by in-situ transmission electron microscope (TEM). Significant structural transformation of amorphous carbon nanofiber (CNF) coated with Cu is observed with an applied potential in a two probe system. The coated Cu particle recrystallize and agglomerate toward the cathode with applied potential due to joule heating and large thermal gradient. Consequently, the amorphous carbon start crystallizing and forming sp(2) hybridized carbon to form graphene sheet from the tip of Cu surface. We observed structural deformation and breaking of the graphene nanoribbon with a higher applied potential, attributing to saturated current flow and induced Joule heating. The observed graphene formation in nanoscale by the in-situ TEM process can be significant to understand carbon atoms and Cu interaction.

| S-EPMC4271261 | biostudies-literature

Mechanism of secondary recrystallization of Goss grains in grain-oriented electrical steel.

Project description:Since its invention by Goss in 1934, grain-oriented (GO) electrical steel has been widely used as a core material in transformers. GO exhibits a grain size of over several millimeters attained by secondary recrystallization during high-temperature final batch annealing. In addition to the unusually large grain size, the crystal direction in the rolling direction is aligned with <001>, which is the easy magnetization axis of α-iron. Secondary recrystallization is the phenomenon in which a certain very small number of {110}<001> (Goss) grains grow selectively (about one in 106 primary grains) at the expense of many other primary recrystallized grains. The question of why the Goss orientation is exclusively selected during secondary recrystallization has long been a main research subject in this field. The general criterion for secondary recrystallization is a small and uniform primary grain size, which is achieved through the inhibition of normal grain growth by fine precipitates called inhibitors. This paper describes several conceivable mechanisms of secondary recrystallization of Goss grains mainly based on the selective growth model.

| S-EPMC5532971 | biostudies-other

Fast synthesis of large-area bilayer graphene film on Cu.

Project description:Bilayer graphene (BLG) is intriguing for its unique properties and potential applications in electronics, photonics, and mechanics. However, the chemical vapor deposition synthesis of large-area high-quality bilayer graphene on Cu is suffering from a low growth rate and limited bilayer coverage. Herein, we demonstrate the fast synthesis of meter-sized bilayer graphene film on commercial polycrystalline Cu foils by introducing trace CO2 during high-temperature growth. Continuous bilayer graphene with a high ratio of AB-stacking structure can be obtained within 20 min, which exhibits enhanced mechanical strength, uniform transmittance, and low sheet resistance in large area. Moreover, 96 and 100% AB-stacking structures were achieved in bilayer graphene grown on single-crystal Cu(111) foil and ultraflat single-crystal Cu(111)/sapphire substrates, respectively. The AB-stacking bilayer graphene exhibits tunable bandgap and performs well in photodetection. This work provides important insights into the growth mechanism and the mass production of large-area high-quality BLG on Cu.

| S-EPMC10238369 | biostudies-literature

Methylamine-assisted growth of uniaxial-oriented perovskite thin films with millimeter-sized grains.

Project description:Defects from grain interiors and boundaries of perovskite films cause significant nonradiative recombination energy loss, and thus perovskite films with controlled crystallinity and large grains is critical for improvement of both photovoltaic performance and stability for perovskite-based solar cells. Here, a methylamine (MA0) gas-assisted crystallization method is developed for fabrication of methylammonium lead iodide (MAPbI3) perovskite films. In the process, the perovskite film is formed via controlled release of MA0 gas molecules from a liquid intermediate phase MAPbI3·xMA0. The resulting perovskite film comprises millimeter-sized grains with (110)-uniaxial crystallographic orientation, exhibiting much low trap density, long carrier lifetime, and excellent environmental stability. The corresponding perovskite solar cell exhibits a power conversion efficiency (PCE) of ~ 21.36%, which is among the highest reported for MAPbI3-based devices. This method provides important progress towards the fabrication of high-quality perovskite thin films for low-cost, highly efficient and stable perovskite solar cells.

| S-EPMC7648077 | biostudies-literature

Graphene Oxide-Assisted Promotion of Plant Growth and Stability.

Project description:The control and promotion of plant and crop growth are important challenges globally. In this study, we have developed a nanomaterial-assisted bionic strategy for accelerating plant growth. Although nanomaterials have been shown to be toxic to plants, we demonstrate herein that graphene oxide can be used as a regulator tool for enhancing plant growth and stability. Graphene oxide was added to the growth medium of Arabidopsis thaliana L. as well as injected into the stem of the watermelon plant. We showed that with an appropriate amount provided, graphene oxide had a positive effect on plant growth in terms of increasing the length of roots, the area of leaves, the number of leaves, and the formation of flower buds. In addition, graphene oxide affected the watermelon ripeness, increasing the perimeter and sugar content of the fruit. We believe that graphene oxide may be used as a strategy for enabling the acceleration of both plant growth and the fruit ripening process.

| S-EPMC7221628 | biostudies-literature

Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum.

Project description:Large single-crystal graphene is highly desired and important for the applications of graphene in electronics, as grain boundaries between graphene grains markedly degrade its quality and properties. Here we report the growth of millimetre-sized hexagonal single-crystal graphene and graphene films joined from such grains on Pt by ambient-pressure chemical vapour deposition. We report a bubbling method to transfer these single graphene grains and graphene films to arbitrary substrate, which is nondestructive not only to graphene, but also to the Pt substrates. The Pt substrates can be repeatedly used for graphene growth. The graphene shows high crystal quality with the reported lowest wrinkle height of 0.8 nm and a carrier mobility of greater than 7,100 cm(2) V(-1) s(-1) under ambient conditions. The repeatable growth of graphene with large single-crystal grains on Pt and its nondestructive transfer may enable various applications.

| S-EPMC3293422 | biostudies-literature

Organic Molecule Assisted Growth of Perovskite Films Consisting of Square Grains by Surface-Confined Process.

Project description:Organic-inorganic perovskite single crystals are promising in the field of optoelectronics due to their excellent optoelectronic properties. However, the ion transport of perovskite precursor is poor in confined spaces, which results in difficulty in the preparation of perovskite single-crystal films. Herein, MAPbBr3 films consisting of square grains were fabricated by the surface-confined process using the organic molecule PEAI (phenethylammonium iodide). Under the effect of oversaturation gradient, PEA+ is combined with the surface of perovskite grain from top to side, which constrains the lateral growth of grains and induces a downward growth of perovskite, leading to the formation of square grains. With the improvement of concentration PEAI, the perovskite film exhibits a decreased side length of grains (from 0.98 to 12.96 μm) and increased grain number and coverage, as well as crystallinity. The perovskite single crystalline grain films with PEAI showed double photoluminescence (PL) emission peaks due to the existence of iodine-rich perovskite. This work may provide a practical way to fabricate high-quality perovskite films for perovskite photoelectronic devices.

| S-EPMC7918920 | biostudies-literature

Growth of graphene with large single-crystal domains by Ni foam-assisted structure and its high-gain field-effect transistors.

Project description:High-quality graphene materials and high-performance graphene transistors have attracted much attention in recent years. To obtain high-performance graphene transistors, large single-crystal graphene is needed. The synthesis of large-domain-sized single-crystal graphene requires low nucleation density; this can lead to a lower growth rate. In this study, a Ni-foam assisted structure was developed to control the nucleation density and growth rate of graphene by tuning the flow dynamics. Lower nucleation density and high growth rate (∼50 μm min-1) were achieved with a 4 mm-gap Ni foam. With the graphene transistor fabrication process, a pre-deposited Au film as the protective layer was used during the graphene transfer. Graphene transistors showed good current saturation with drain differential conductance as low as 0.04 S mm-1 in the strong saturation region. For the devices with gate length of 2 μm, the intrinsic cut-off frequency f T and maximum oscillation frequency f max were 8.4 and 16.3 GHz, respectively, with f max/f T = 1.9 and power gain of up to 6.4 dB at 1 GHz. The electron velocity saturation induced by the surface optical phonons of SiO2 substrates was analyzed. Electron velocity saturation and ultra-thin Al2O3 gate dielectrics were thought to be the reasons for the good current saturation and high power gain of the graphene transistors.

| S-EPMC9473297 | biostudies-literature

Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.

Project description:We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.

| S-EPMC4957148 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data