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Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS2/hBN Vertical Heterostructures.


ABSTRACT: Recent studies have revealed that van der Waals (vdW) heteroepitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to the formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes a strong limitation on the crystal orientation of grains is still not understood yet. In this work, we have focused on investigating the microscopic mechanism of the self-alignment of MoS2 grains in vdW epitaxial growth on hBN. Using the density functional theory and the Lennard-Jones potential, we found that the interlayer energy between MoS2 and hBN strongly depends on the size and crystal orientation of MoS2. We also found that, when the size of MoS2 is several tens of nanometers, the rotational energy barrier can exceed ?1 eV, which should suppress rotation to align the crystal orientation of MoS2 even at the growth temperature.

SUBMITTER: Okada M 

PROVIDER: S-EPMC7745401 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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Microscopic Mechanism of Van der Waals Heteroepitaxy in the Formation of MoS<sub>2</sub>/hBN Vertical Heterostructures.

Okada Mitsuhiro M   Maruyama Mina M   Okada Susumu S   Warner Jamie H JH   Kureishi Yusuke Y   Uchiyama Yosuke Y   Taniguchi Takashi T   Watanabe Kenji K   Shimizu Tetsuo T   Kubo Toshitaka T   Ishihara Masatou M   Shinohara Hisanori H   Kitaura Ryo R  

ACS omega 20201130 49


Recent studies have revealed that van der Waals (vdW) heteroepitaxial growth of 2D materials on crystalline substrates, such as hexagonal boron nitride (hBN), leads to the formation of self-aligned grains, which results in defect-free stitching between the grains. However, how the weak vdW interaction causes a strong limitation on the crystal orientation of grains is still not understood yet. In this work, we have focused on investigating the microscopic mechanism of the self-alignment of MoS<su  ...[more]

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