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GaInP nanowire arrays for color conversion applications.

ABSTRACT: Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga_0.51In_0.49P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then embedded in a transparent film to generate stand-alone color converting films for spectrophotometry and photoluminescence experiments. Finite-difference time-domain simulations and spectrophotometry measurements are used to design and validate the GaInP structures embedded in (stand-alone) transparent films for maximum light absorption and color conversion from blue (450 nm) and green (532 nm) to red (~?660 nm) light, respectively. It is shown that (embedded) 1 ?m-high GaInP nanowire arrays can be designed to absorb?~?100% of 450 nm and 532 nm wavelength incident light. Room-temperature photoluminescence measurements with 405 nm and 532 nm laser excitation are used for proof-of-principle demonstration of color conversion from the embedded GaInP structures. The (tapered) GaInP nanowire arrays, despite very low fill factors (~?24%), can out-perform the micro-arrays and bulk-like slabs due to a better in- and out-coupling of source and emitted light, respectively.

SUBMITTER: Visser D

PROVIDER: S-EPMC7755895 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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GaInP nanowire arrays for color conversion applications.

Visser Dennis D Désières Yohan Y Swillo Marcin M De Luca Eleonora E Anand Srinivasan S

Scientific reports 20201222 1

Color conversion by (tapered) nanowire arrays fabricated in GaInP with bandgap emission in the red spectral region are investigated with blue and green source light LEDs in perspective. GaInP nano- and microstructures, fabricated using top-down pattern transfer methods, are derived from epitaxial Ga<sub>0.51</sub>In<sub>0.49</sub>P/GaAs stacks with pre-determined layer thicknesses. Substrate-free GaInP micro- and nanostructures obtained by selectively etching the GaAs sacrificial layers are then ...[more]

PMID: 33353978

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GaInP nanowire arrays for color conversion applications.

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GaInP nanowire arrays for color conversion applications.

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