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Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.

ABSTRACT: In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO₂/Si₃N₄/SiO₂) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching and synaptic behaviors were improved by inserting a Si₃N₄ layer between the HfO₂ and SiO₂ layers. The electric field within SiO₂ was mitigated, thus reducing the current overshoot in the trilayer device. The reset current was considerably reduced in the trilayer device compared to the bilayer device without a Si₃N₄ layer. Moreover, the nonlinear characteristics in the low-resistance state are helpful for implementing high-density memory. The higher array size in the trilayer device was verified by cross-point array simulation. Finally, the multiple conductance adjustment was demonstrated in the trilayer device by controlling the gradual set and reset switching behavior.

SUBMITTER: Ryu H

PROVIDER: S-EPMC7763874 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.

Ryu Hojeong H Kim Sungjun S

Nanomaterials (Basel, Switzerland) 20201209 12

In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO2/Si3N4/SiO2) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via transmission electron microscopy and X-ray photoelectron spectroscopy. The resistive switching and synaptic behaviors were improved by inserting a Si3N4 layer between the Hf ...[more]

PMID: 33317045

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Project description:BackgroundThe aim of this study is to evaluate cardiovascular and respiratory effects of intrathoracic pressure overshoot (higher than insufflation pressure) in patients who underwent thoracoscopic esophagectomy procedures with carbon dioxide (CO2) pneumothorax.MethodsThis prospective research included 200 patients who were scheduled for esophagectomy from August 2016 to July 2020. The patients were randomly divided into the Stryker insufflator (STR) group and the Storz insufflator (STO) group. We recorded the changes of intrathoracic pressure, peak airway pressure, blood pressure, heart rate and central venous pressure (CVP) during artificial pneumothorax. The differences in blood gas analysis, the administration of vasopressors and the recovery time were compared between the two groups.ResultsWe found that during the artificial pneumothorax, intrathoracic pressure overshoot occurred in both the STR group (8.9 mmHg, 38 times per hour) and the STO group (9.8 mmHg, 32 times per hour). The recorded maximum intrathoracic pressures were up to 58 mmHg in the STR group and 51 mmHg in the STO group. The average duration of intrathoracic pressure overshoot was significantly longer in the STR group (5.3 ± 0.86 s) vs. the STO group (1.2 ± 0.31 s, P < 0.01). During intrathoracic pressure overshoot, a greater reduction in systolic blood pressure (SBP) (5.6 mmHg vs. 1.1 mmHg, P < 0.01), a higher elevation in airway peak pressure (4.8 ± 1.17 cmH2O vs. 0.9 ± 0.41 cmH2O, P < 0.01), and a larger increase in CVP (8.2 ± 2.86 cmH2O vs. 4.9 ± 2.35 cmH2O, P < 0.01) were observed in the STR group than in the STO group. Vasopressors were also applied more frequently in the STR group than in the STO group (68% vs. 43%, P < 0.01). The reduction of SBP caused by thoracic pressure overshoot was significantly correlated with the duration of overshoot (R = 0.76). No obvious correlation was found between the SBP reduction and the maximum pressure overshoot.ConclusionsIntrathoracic pressure overshoot can occur during thoracoscopic surgery with artificial CO2 pneumothorax and may lead to cardiovascular adverse effects which highly depends on the duration of the pressure overshoot.Trial registrationClinicaltrials.gov ( NCT02330536 ; December 24, 2014).

Dataset Information

Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.

Publications

Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot.

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