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Ti Alloyed ?-Ga₂O₃: Route towards Wide Band Gap Engineering.

ABSTRACT: The suitability of Ti as a band gap modifier for ?-Ga₂O₃ was investigated, taking advantage of the isostructural ? phases and high band gap difference between Ti₂O₃ and Ga₂O₃. Films of (Ti,Ga)₂O₃ were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality ?-(Ti_xGa_1-x)₂O₃ films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ? x ? 5.3%, the band gap energy varies by ?270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on ?-Ga₂O₃.

SUBMITTER: Barthel A

PROVIDER: S-EPMC7766553 | biostudies-literature | 2020 Dec

REPOSITORIES: biostudies-literature

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Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.

Barthel Armin A Roberts Joseph J Napari Mari M Frentrup Martin M Huq Tahmida T Kovács András A Oliver Rachel R Chalker Paul P Sajavaara Timo T Massabuau Fabien F

Micromachines 20201220 12

The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(Ti<s ...[more]

PMID: 33419277

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Project description:The goal of this study is to determine how bulk vibrational properties and interfacial structure affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain thermoreflectance measurements of thermal conductance G are reported for interfaces between nitride metals and group IV (diamond, SiC, Si, and Ge) and group III-V (AlN, GaN, and cubic BN) materials. Group IV and group III-V semiconductors have systematic differences in vibrational properties. Similarly, HfN and TiN are also vibrationally distinct from each other. Therefore, comparing G of interfaces formed from these materials provides a systematic test of how vibrational similarity between two materials affects interfacial transport. For HfN interfaces, we observe conductances between 140 and 300 MW m-2 K-1, whereas conductances between 200 and 800 MW m-2 K-1 are observed for TiN interfaces. TiN forms exceptionally conductive interfaces with GaN, AlN, and diamond, that is, G > 400 MW m-2 K-1. Surprisingly, interfaces formed between vibrationally similar and dissimilar materials are similarly conductive. Thus, vibrational similarity between two materials is not a necessary requirement for high G. Instead, the time-domain thermoreflectance experiment (TDTR) data, an analysis of bulk vibrational properties, and transmission electron microscopy (TEM) suggest that G depends on two other material properties, namely, the bulk phonon properties of the vibrationally softer of the two materials and the interfacial structure. To determine how G depends on interfacial structure, TDTR and TEM measurements were conducted on a series of TiN/AlN samples prepared in different ways. Interfacial disorder at a TiN/AlN interface adds a thermal resistance equivalent to ∼1 nm of amorphous material. Our findings improve fundamental understanding of what material properties are most important for thermally conductive interfaces. They also provide benchmarks for the thermal conductance of interfaces with wide band gap semiconductors.

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Ti Alloyed ?-Ga₂O₃: Route towards Wide Band Gap Engineering.

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Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap Engineering.

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Dataset Information

Ti Alloyed ?-Ga2O3: Route towards Wide Band Gap Engineering.

Publications

Ti Alloyed <i>α</i>-Ga<sub>2</sub>O<sub>3</sub>: Route towards Wide Band Gap Engineering.

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OmicsDI is part of the ELIXIR infrastructure

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Ti Alloyed ?-Ga₂O₃: Route towards Wide Band Gap Engineering.