Dataset Information

Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO₂ Detection.

ABSTRACT: The microstructure of the organic semiconductor (OSC) active layer is one of the crucial topics to improve the sensing performance of gas sensors. Herein, we introduce a simple solvent vapor annealing (SVA) process to control 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) OSC films morphology and thus yields high-sensitivity nitrogen organic thin-film transistor (OTFT)-based nitrogen dioxide (NO₂) sensors. Compared to pristine devices, the toluene SVA-treated devices exhibit an order of magnitude responsivity enhancement to 10 ppm NO₂, further with a limit of detection of 148 ppb. Systematic studies on the microstructure of the TIPS-pentacene films reveal the large density grain boundaries formed by the SVA process, improving the capability for the adsorption of gas molecules, thus causing high-sensitivity to NO₂. This simple SVA processing strategy provides an effective and reliable access for realizing high-sensitivity OTFT NO₂ sensors.

SUBMITTER: Hou S

PROVIDER: S-EPMC7794992 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature

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Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO<sub>2</sub> Detection.

Hou Sihui S Zhuang Xinming X Fan Huidong H Yu Junsheng J

Sensors (Basel, Switzerland) 20210101 1

The microstructure of the organic semiconductor (OSC) active layer is one of the crucial topics to improve the sensing performance of gas sensors. Herein, we introduce a simple solvent vapor annealing (SVA) process to control 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) OSC films morphology and thus yields high-sensitivity nitrogen organic thin-film transistor (OTFT)-based nitrogen dioxide (NO<sub>2</sub>) sensors. Compared to pristine devices, the toluene SVA-treated devices ex ...[more]

PMID: 33401403

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Project description:The self-assembly of ultra-high molecular weight (UHMW) block copolymers (BCPs) remains a complex and time-consuming endeavor owing to the high kinetic penalties associated with long polymer chain entanglement. In this work, we report a unique strategy of overcoming these kinetic barriers through precision solvent annealing of an UHMW polystyrene-block-poly(2-vinylpyridine) BCP system (M w: ∼800 kg/mol) by fast swelling to very high levels of solvent concentration (ϕs). Phase separation on timescales of ∼10 min is demonstrated once a thickness-dependent threshold ϕs value of ∼0.80-0.86 is achieved, resulting in lamellar feature spacings of over 190 nm. The threshold ϕs value was found to be greater for films with higher dry thickness (D 0) values. Tunability of the domain morphology is achieved through controlled variation of both D 0 and ϕs, with the kinetically unstable hexagonal perforated lamellar (HPL) phase observed at ϕs values of ∼0.67 and D 0 values of 59-110 nm. This HPL phase can be controllably induced into an order-order transition to a lamellar morphology upon further increase of ϕs to 0.80 or above. As confirmed by grazing-incidence small-angle X-ray scattering, the lateral ordering of the lamellar domains is shown to improve with increasing ϕs up to a maximum value at which the films transition to a disordered state. Thicker films are shown to possess a higher maximum ϕs value before transitioning to a disordered state. The swelling rate is shown to moderately influence the lateral ordering of the phase-separated structures, while the amount of hold time at a particular value of ϕs does not notably enhance the phase separation process. These large period self-assembled lamellar domains are then employed to facilitate pattern transfer using a liquid-phase infiltration method, followed by plasma etching, generating ordered, high aspect ratio Si nanowall structures with spacings of ∼190 nm and heights of up to ∼500 nm. This work underpins the feasibility of a room-temperature, solvent-based annealing approach for the reliable and scalable fabrication of sub-wavelength nanostructures via BCP lithography.

Dataset Information

Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO₂ Detection.

Publications

Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO<sub>2</sub> Detection.

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Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO2 Detection.

Publications

Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO<sub>2</sub> Detection.

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OmicsDI is part of the ELIXIR infrastructure

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Grain Boundary Control of Organic Semiconductors via Solvent Vapor Annealing for High-Sensitivity NO₂ Detection.