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Characterising Exciton Generation in Bulk-Heterojunction Organic Solar Cells.


ABSTRACT: In this paper, characterisation of exciton generation is carried out in three bulk-heterojunction organic solar cells (BHJ OSCs)-OSC1: an inverted non-fullerene (NF) BHJ OSC; OSC2: a conventional NF BHJ OSC; and OSC3: a conventional fullerene BHJ OSC. It is found that the overlap of the regions of strong constructive interference of incident and reflected electric fields of electromagnetic waves and those of high photon absorption within the active layer depends on the active layer thickness. An optimal thickness of the active layer can thus be obtained at which this overlap is maximum. We have simulated the rates of total exciton generation and position dependent exciton generation within the active layer as a function of the thicknesses of all the layers in all three OSCs and optimised their structures. Based on our simulated results, the inverted NF BHJ OSC1 is found to have better short circuit current density which may lead to better photovoltaic performance than the other two. It is expected that the results of this paper may provide guidance in fabricating highly efficient and cost effective BHJ OSCs.

SUBMITTER: Sreedhar Ram K 

PROVIDER: S-EPMC7829893 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature

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Characterising Exciton Generation in Bulk-Heterojunction Organic Solar Cells.

Sreedhar Ram Kiran K   Mehdizadeh-Rad Hooman H   Ompong David D   Setsoafia Daniel Dodzi Yao DDY   Singh Jai J  

Nanomaterials (Basel, Switzerland) 20210115 1


In this paper, characterisation of exciton generation is carried out in three bulk-heterojunction organic solar cells (BHJ OSCs)-OSC1: an inverted non-fullerene (NF) BHJ OSC; OSC2: a conventional NF BHJ OSC; and OSC3: a conventional fullerene BHJ OSC. It is found that the overlap of the regions of strong constructive interference of incident and reflected electric fields of electromagnetic waves and those of high photon absorption within the active layer depends on the active layer thickness. An  ...[more]

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