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Benchmarking monolayer MoS₂ and WS₂ field-effect transistors.

ABSTRACT: Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS₂ and WS₂ films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS₂ FETs and 160 WS₂ FETs with channel lengths ranging from 5??m down to 100?nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against existing literature as well as ultra-thin body Si FETs. Our results show consistent performance of 2D FETs across 1?×?1?cm² chips owing to high quality and uniform growth of these TMDs followed by clean transfer onto device substrates. We are able to demonstrate record high carrier mobility of 33?cm²?V^-1?s^-1 in WS₂ FETs, which is a 1.5X improvement compared to the best reported in the literature. Our experimental demonstrations confirm the technological viability of 2D FETs in future integrated circuits.

SUBMITTER: Sebastian A

PROVIDER: S-EPMC7846590 | biostudies-literature | 2021 Jan

REPOSITORIES: biostudies-literature

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Benchmarking monolayer MoS2 and WS2 field-effect transistors.

Sebastian Amritanand A Pendurthi Rahul R Choudhury Tanushree H TH Redwing Joan M JM Das Saptarshi S

Nature communications 20210129 1

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition process. Our study involves 230 MoS2 FETs and 160 WS2 FETs with channel lengths ranging from 5 μm down to 100 nm. We use statistical measures to evaluate key FET performance indicators for benchmarking these two-dimensional (2D) transition metal dichalcogenide (TMD) monolayers against ...[more]

PMID: 33514710

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