Ontology highlight
ABSTRACT:
SUBMITTER: Stein RM
PROVIDER: S-EPMC7874850 | biostudies-literature | 2020
REPOSITORIES: biostudies-literature
Stein Ryan M RM Stewart M D MD
Journal of applied physics 20200101 2
Semiconductor quantum dot (QD) devices experience a modulation of the band structure at the edge of lithographically defined gates due to mechanical strain. This modulation can play a prominent role in the device behavior at low temperatures, where QD devices operate. Here, we develop an electrical measurement of strain based on the I(V) characteristics of tunnel junctions defined by aluminum and titanium gates. We measure relative differences in the tunnel barrier height due to strain consisten ...[more]