Voltage controlled Neel vector rotation in zero magnetic field.

ABSTRACT: Multi-functional thin films of boron (B) doped Cr₂O₃ exhibit voltage-controlled and nonvolatile Néel vector reorientation in the absence of an applied magnetic field, H. Toggling of antiferromagnetic states is demonstrated in prototype device structures at CMOS compatible temperatures between 300 and 400 K. The boundary magnetization associated with the Néel vector orientation serves as state variable which is read via magnetoresistive detection in a Pt Hall bar adjacent to the B:Cr₂O₃ film. Switching of the Hall voltage between zero and non-zero values implies Néel vector rotation by 90 degrees. Combined magnetometry, spin resolved inverse photoemission, electric transport and scanning probe microscopy measurements reveal B-dependent T_N

SUBMITTER: Mahmood A 

PROVIDER: S-EPMC7960997 | biostudies-literature | 2021 Mar

REPOSITORIES: biostudies-literature