Unknown

Dataset Information

0

In situ microbeam surface X-ray scattering reveals alternating step kinetics during crystal growth.


ABSTRACT: The stacking sequence of hexagonal close-packed and related crystals typically results in steps on vicinal {0001} surfaces that have alternating A and B structures with different growth kinetics. However, because it is difficult to experimentally identify which step has the A or B structure, it has not been possible to determine which has faster adatom attachment kinetics. Here we show that in situ microbeam surface X-ray scattering can determine whether A or B steps have faster kinetics under specific growth conditions. We demonstrate this for organo-metallic vapor phase epitaxy of (0001) GaN. X-ray measurements performed during growth find that the average width of terraces above A steps increases with growth rate, indicating that attachment rate constants are higher for A steps, in contrast to most predictions. Our results have direct implications for understanding the atomic-scale mechanisms of GaN growth and can be applied to a wide variety of related crystals.

SUBMITTER: Ju G 

PROVIDER: S-EPMC7979818 | biostudies-literature |

REPOSITORIES: biostudies-literature

Similar Datasets

| S-EPMC6100780 | biostudies-literature
| S-EPMC7101220 | biostudies-literature
| S-EPMC4212243 | biostudies-literature
| S-EPMC5701744 | biostudies-literature
| S-EPMC6933817 | biostudies-literature
| S-EPMC8040814 | biostudies-literature
| S-EPMC6661014 | biostudies-literature
| S-EPMC5563841 | biostudies-literature
| S-EPMC5889402 | biostudies-literature
| S-EPMC3087622 | biostudies-literature