High Gain and Broadband Absorption Graphene Photodetector Decorated with Bi2Te3 Nanowires.
Ontology highlight
ABSTRACT:
SUBMITTER: Yoo TJ
PROVIDER: S-EPMC8002706 | biostudies-literature |
REPOSITORIES: biostudies-literature
Similar Datasets
Project description:Recently, very exciting optoelectronic properties of Topological insulators (TIs) such as strong light absorption, photocurrent sensitivity to the polarization of light, layer thickness and size dependent band gap tuning have been demonstrated experimentally. Strong interaction of light with TIs has been shown theoretically along with a proposal for a TIs based broad spectral photodetector having potential to perform at the same level as that of a graphene based photodetector. Here we demonstrate that focused ion beam (FIB) fabricated nanowires of TIs could be used as ultrasensitive visible-NIR nanowire photodetector based on TIs. We have observed efficient electron hole pair generation in the studied Bi2Se3 nanowire under the illumination of visible (532 nm) and IR light (1064 nm). The observed photo-responsivity of ~300 A/W is four orders of magnitude larger than the earlier reported results on this material. Even though the role of 2D surface states responsible for high reponsivity is unclear, the novel and simple micromechanical cleavage (exfoliation) technique for the deposition of Bi2Se3 flakes followed by nanowire fabrication using FIB milling enables the construction and designing of ultrasensitive broad spectral TIs based nanowire photodetector which can be exploited further as a promising material for optoelectronic devices.
| S-EPMC4707481 | biostudies-literature
Project description:The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.
| S-EPMC8839128 | biostudies-literature
Project description:The present investigation is focused on the in-situ synthesis of Graphene oxide (GO)-ferrite nanoparticle hybrid framework by gel-combustion method followed by fabrication of homogeneous, structurally stable thin (~100-120 ?m) hybrid-polyurethane coating on a metallic aluminum substrate and its application on the properties of broadband absorption over the microwave frequency region. Microstructure studies of hybrid materials illustrated that small sized ferrite nanoparticles (~17?nm) are grafted on and through the graphene layers, which forms a homogeneous coating thereby. The hybrid-nanocomposite coating demonstrated superior broadband absorption properties with absorptivity higher than 90% throughout a bandwidth of ~6?GHz, and moreover, it was found that with increased loading of GO in the nanocomposite, the bandwidth range of absorption frequency increases with enhanced absorptivity. The real part and imaginary part of the surface impedance values of the coating was obtained as 377 ? and 0 ?, respectively, which imply that the free-space impedance of the hybrid-nanocomposite coating is matching correctly. The nanocomposite coating showed ultra-high absorptivity over the frequency band of 8-12?GHz, which has numerous practical applications as radar absorbing materials (RAM), stealth technology, electromagnetic shielding, and radiated electromagnetic interference (EMI) management in onboard spacecraft and many more.
| S-EPMC6702174 | biostudies-literature
Project description:An angle-insensitive broadband absorber of graphene covering the whole visible spectrum is numerically demonstrated, which is resulted from multiple couplings of the electric and magnetic dipole resonances in the narrow metallic grooves. This is achieved by integrating the graphene sheet with a multi-grooved metasurface separated by a polymethyl methacrylate (PMMA) spacer, and an average absorption efficiency of 71.1% can be realized in the spectral range from 450 to 800 nm. The location of the absorption peak of graphene can be tuned by the groove depth, and the bandwidth of absorption can be flexibly controlled by tailoring both the number and the depth of the groove. In addition, broadband light absorption enhancement of graphene is robust to the variations of the structure parameters, and good absorption properties can be maintained even the incident angle is increased to 60°.
| S-EPMC6426901 | biostudies-literature
Project description:The mid-infrared (MIR) is an exciting spectral range that also hosts useful molecular vibrational fingerprints. There is a growing interest in nanophotonics operating in this spectral range, and recent advances in plasmonic research are aimed at enhancing MIR infrared nanophotonics. In particular, the design of hybrid plasmonic metasurfaces has emerged as a promising route to realize novel MIR applications. Here we demonstrate a hybrid nanostructure combining graphene and silicon carbide to extend the spectral phonon response of silicon carbide and enable absorption and field enhancement of the MIR photon via the excitation and hybridization of surface plasmon polaritons and surface phonon polaritons. We combine experimental methods and finite element simulations to demonstrate enhanced absorption of MIR photons and the broadening of the spectral resonance of graphene-coated silicon carbide nanowires. We also indicate subwavelength confinement of the MIR photons within a thin oxide layer a few nanometers thick, sandwiched between the graphene and silicon carbide. This intermediate shell layer is characteristically obtained using our graphitization approach and acts as a coupling medium between the core and outer shell of the nanowires.
| S-EPMC8465231 | biostudies-literature
Project description:There is an increasing interest in using graphene (1, 2) for optoelectronic applications. (3-19) However, because graphene is an inherently weak optical absorber (only ?2.3% absorption), novel concepts need to be developed to increase the absorption and take full advantage of its unique optical properties. We demonstrate that by monolithically integrating graphene with a Fabry-Pérot microcavity, the optical absorption is 26-fold enhanced, reaching values >60%. We present a graphene-based microcavity photodetector with responsivity of 21 mA/W. Our approach can be applied to a variety of other graphene devices, such as electro-absorption modulators, variable optical attenuators, or light emitters, and provides a new route to graphene photonics with the potential for applications in communications, security, sensing and spectroscopy.
| S-EPMC3396125 | biostudies-literature
Project description:A high-performance and broadband heterojunction photodetector has been successfully fabricated. The heterostructure device is based on a uniform and pinhole-free perovskite film constructed on top of a single-crystal germanium layer. The perovskite/germanium photodetector shows enhanced performance and a broad spectrum compared with the single-material-based device. The photon response properties are characterized in detail from the visible to near-infrared spectrum. At an optical fibre communication wavelength of 1550?nm, the heterojunction device exhibits the highest responsivity of 1.4?A/W. The performance is promoted because of an antireflection perovskite coating, the thickness of which is optimized to 150?nm at the telecommunication band. At a visible light wavelength of 680?nm, the device shows outstanding responsivity and detectivity of 228?A/W and 1.6?×?1010 Jones, respectively. These excellent properties arise from the photoconductive gain boost in the heterostructure device. The presented heterojunction photodetector provides a competitive approach for wide-spectrum photodetection from visible to optical communication areas. Based on the distinguished capacity of light detection and harvesting from the visible to near-infrared spectrum, the designed germanium/perovskite heterostructure configuration is believed to provide new building blocks for novel optoelectronic devices.
| S-EPMC6872564 | biostudies-literature
Project description:Two-dimensional (2D) materials have expansive application prospects in electronics and optoelectronics devices due to their unique physical and chemical properties. 2D layered materials are easy to prepare due to the layered crystal structure and the interlayer van der Waals combination. However, the 2D nonlayered materials are difficult to prepare due to the nonlayered crystal structure and the combination of interlayer isotropic chemical bonds, resulting in limited research on 2D nonlayered materials with broad characteristics. Here, a 2D nonlayered NiSe material has been synthesized by a chemical vapor deposition method. The atomic force microscopy study shows that the grown NiSe with a thin thickness. Energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and transmission electron microscopy results demonstrate the uniformity and high quality of NiSe flakes. The NiSe based photodetector realizes the laser response to 830 nm and 10.6 μm and the maximum responsivity is ~6.96 A/W at room temperature. This work lays the foundation for the preparation of 2D nonlayered materials and expands the application of 2D nonlayered materials in optoelectronics fields.
| S-EPMC8471629 | biostudies-literature
Project description:Graphene oxide (GO) was rarely used as microwave absorption (MA) material due to its lower dielectric loss compared with reduced GO (RGO). However, the characteristics of low conductivity, light weight, and large surface area were beneficial to the impedance matching for absorbers already containing highly conductive metal materials. Cu@Ni nanowires are promising MA materials due to the desired dielectric loss from copper and excellent magnetic loss from nickel. However, the high density was an impediment to its further application. Combining Cu@Ni nanowires with GO should be an effective solution to decrease the absorber's density and improve its MA properties. Herein, we demonstrated that Cu@Ni nanowires/GO composites exhibited enhanced MA capacities compared with Cu@Ni nanowires or GO alone, and the minimum reflection loss reached -42.8 dB at 16.9 GHz with a thickness of 2.1 mm. The enhanced MA performance mainly originated from good impedance matching, as a result of the addition of low conductivity of GO. To confirm this point, the MA performance of Cu@Ni nanowires/RGO was studied, and unsurprisingly, weak MA performance was obtained. Our work provides a new strategy to decrease the density, broaden the frequency band and tune MA performance of composites.
| S-EPMC5431521 | biostudies-literature
Project description:The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared (LWIR) photodetectors with high detectivity and high responsivity. These photodetectors are highly desirable for applications such as infrared earth science and astronomy, remote sensing, optical communication, and thermal and medical imaging. Here, we report the design, growth, and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-II superlattices. The 1/e cut-off wavelength of the device is 8.0 µm. At 77 K, unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2 × 10-7 A/cm2. The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV. This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34 × 1013 cm Hz1/2/W at a peak detection wavelength of ~6.8 µm. The type-II superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach.
| S-EPMC7809042 | biostudies-literature