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Atomic Layer Deposition (ALD) of Alumina over Activated Carbon Electrodes Enabling a Stable 4 V Supercapacitor Operation.

ABSTRACT: Designing high voltage (>3 V) and stable electrochemical supercapacitors with low self-discharge is desirable for the applications in modern electronic devices. This work demonstrates a 4 V symmetric supercapacitor with stabilized cycling performance through atomic layer deposition (ALD) of alumina (Al₂ O₃ ) on the surface of activated carbon (AC). The 20-cycle ALD Al₂ O₃ coated AC delivers 84 % capacitance retention after 1000 charge/discharge cycles under 4 V, contrary to the bare AC cells having only 48 % retention. The extended cycling life is associated with the thickened Stern layer and suppressed oxygen functional group. The self-discharge data also show that the Al₂ O₃ coating enables AC cells to maintain 53 % of charge retention after 12 h, which is more than twice higher than that of bare AC cells under the same test protocol of 4 V charging. The curve fitting analysis reveals that ALD coating induced slow self-discharge dominated by ion diffusion mechanism, thus enhancing the AC surface energy.

SUBMITTER: Gandla D

PROVIDER: S-EPMC8015731 | biostudies-literature |

REPOSITORIES: biostudies-literature

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Enhanced activity of highly conformal and layered tin sulfide (SnSx) prepared by atomic layer deposition (ALD) on 3D metal scaffold towards high performance supercapacitor electrode.

Project description:Layered Sn-based chalcogenides and heterostructures are widely used in batteries and photocatalysis, but its utilizations in a supercapacitor is limited by its structural instability and low conductivity. Here, SnSx thin films are directly and conformally deposited on a three-dimensional (3D) Ni-foam (NF) substrate by atomic layer deposition (ALD), using tetrakis(dimethylamino)tin [TDMASn, ((CH3)2N)4Sn] and H2S that serves as an electrode for supercapacitor without any additional treatment. Two kinds of ALD-SnSx films grown at 160 °C and 180 °C are investigated systematically by X-ray diffractometry, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy (TEM). All of the characterization results indicate that the films deposited at 160 °C and 180 °C predominantly consist of hexagonal structured-SnS2 and orthorhombic-SnS phases, respectively. Moreover, the high-resolution TEM analyses (HRTEM) reveals the (001) oriented polycrystalline hexagonal-SnS2 layered structure for the films grown at 160 °C. The double layer capacitance with the composite electrode of SnSx@NF grown at 160 °C is higher than that of SnSx@NF at 180 °C, while pseudocapacitive Faradaic reactions are evident for both SnSx@NF electrodes. The superior performance as an electrode is directly linked to the layered structure of SnS2. Further, the optimal thickness of ALD-SnSx thin film is found to be 60 nm for the composite electrode of SnSx@NF grown at 160 °C by controlling the number of ALD cycles. The optimized SnSx@NF electrode delivers an areal capacitance of 805.5 mF/cm2 at a current density of 0.5 mA/cm2 and excellent cyclic stability over 5000 charge/discharge cycles.

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| S-EPMC3419543 | biostudies-literature

Formation of Micro- and Nanostructures on the Nanotitanium Surface by Chemical Etching and Deposition of Titania Films by Atomic Layer Deposition (ALD).

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Project description:Nanoporous iridium electrodes are prepared and electrochemically investigated towards the water oxidation (oxygen evolution) reaction. The preparation is based on 'anodic' aluminum oxide templates, which provide straight, cylindrical nanopores. Their walls are coated using atomic layer deposition (ALD) with a newly developed reaction which results in a metallic iridium layer. The ALD film growth is quantified by spectroscopic ellipsometry and X-ray reflectometry. The morphology and composition of the electrodes are characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray diffraction. Their catalytic activity is quantified for various pore geometries by cyclic voltammetry, steady-state electrolysis, and electrochemical impedance spectroscopy. With an optimal pore length of L?17-20??m, we achieve current densities of J=0.28?mA?cm-2 at pH?5 and J=2.4?mA?cm-2 at pH?1. This platform is particularly competitive for achieving moderate current densities at very low overpotentials, that is, for a high degree of reversibility in energy storage.

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Structural insight into an atomic layer deposition (ALD) grown Al2O3 layer on Ni/SiO2: impact on catalytic activity and stability in dry reforming of methane.

Project description:The development of stable Ni-based dry reforming of methane (DRM) catalysts is a key challenge owing to the high operating temperatures of the process and the propensity of Ni for promoting carbon deposition. In this work, Al2O3-coated Ni/SiO2 catalysts have been developed by employing atomic layer deposition (ALD). The structure of the catalyst at each individual preparation step was characterized in detail through a combination of in situ XAS-XRD, ex situ 27Al NMR and Raman spectroscopy. Specifically, in the calcination step, the ALD-grown Al2O3 layer reacts with the SiO2 support and Ni, forming aluminosilicate and NiAl2O4. The Al2O3-coated Ni/SiO2 catalyst exhibits an improved stability for DRM when compared to the benchmark Ni/SiO2 and Ni/Al2O3 catalysts. In situ XAS-XRD during DRM together with ex situ Raman spectroscopy and TEM of the spent catalysts confirm that the ALD-grown Al2O3 layer suppresses the sintering of Ni, in turn reducing also coke formation significantly. In addition, the formation of an amorphous aluminosilicate phase by the reaction of the ALD-grown Al2O3 layer with the SiO2 support inhibited catalysts deactivation via NiAl2O4 formation, in contrast to the reference Ni/Al2O3 system. The in-depth structural characterization of the catalysts provided an insight into the structural dynamics of the ALD-grown Al2O3 layer, which reacts both with the support and the active metal, allowing to rationalize the high stability of the catalyst under the harsh DRM conditions.

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Project description:Changes associated to atomic layer deposition (ALD) of SiO2 from 3-aminopropyl triethoxysilane (APTES) and O3, on a nanoporous alumina structure, obtained by two-step electrochemical anodization in oxalic acid electrolyte (Ox sample) are analysed. A reduction of 16% in pore size for the Ox sample, used as support, was determined by SEM analysis after its coverage by a SiO2 layer (Ox+SiO2 sample), independently of APTES or O3 modification (Ox+SiO2/APTES and Ox+SiO2/APTES/O3 samples). Chemical surface modification was determined by X-ray photoelectron spectroscopy (XPS) technique during the different stages of the ALD process, and differences induced at the surface level on the Ox nanoporous alumina substrate seem to affect interfacial effects of both samples when they are in contact with an electrolyte solution according to electrochemical impedance spectroscopy (EIS) measurements, or their refraction index as determined by spectroscopic ellipsometry (SE) technique. However, no substantial differences in properties related to the nanoporous structure of anodic alumina (photoluminescent (PL) character or geometrical parameters) were observed between Ox+SiO2/APTES and Ox+SiO2/APTES/O3 samples.

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