Green phosphorescent organic light-emitting diode exhibiting highest external quantum efficiency with ultra-thin undoped emission layer.
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ABSTRACT:
SUBMITTER: Kang SW
PROVIDER: S-EPMC8055988 | biostudies-literature |
REPOSITORIES: biostudies-literature
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Project description:The electrical current leakage and stability are studied for solution-processed OLEDs with areas of 4.45 mm2, 3 × 3.2 cm2, and 6 × 11.5 cm2. The emission layer of the OLED has a ternary or binary mixed host with hole-transporting molecules tris(4-carbazoyl-9-ylphenyl)amine (TCTA) and 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi), together with the electron-transporting molecule 2,7-bis(diphenylphosphoryl)-9,9'-spirobi[fluorene] (SPPO13). The phosphorescent emitters are Ir(mppy)3 for green and bis[4-(4-tert-butylphenyl)thieno[3,2-c]pyridine][N,N'-diisopropylbenamidinato]iridium(iii) (PR-02) for orange. Poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl))diphenylamine)] (TFB) is used as the hole transport layer and PEDOT:PSS is used as the hole injection layer. On top of the emission layer, CsF/Al is deposited by thermal evaporation as the cathode. All organic layers are deposited by blade coating and the initial current leaking defects can be avoided by careful control of the coating conditions. The detrimental burning point caused by a local current short developed after long-time operation can be avoided by reducing the operation voltage using a ternary mixed host. The operation voltage is only 4 V at 100 cd m-2 and 5 V at 250 cd m-2 for the green emitting device. Furthermore, the crystallization defect is reduced by the ternary host. For the orange emitting device, the binary host is good enough with an operating voltage of 5 V at 100 cd m-2. For an area as large as 6 × 11.5 cm2, the OLED shows good stability and there is no burning point after an operation of over 1600 hours.
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Project description:Two efficient fluorescent molecules, viz., (E)-2-(2-4-(1-2,3-dihydrobenzo[b][1,4]dioxin-5-yl)-4,5-diphenyl-H-imidazole-2-yl)-[1,1-biphenyl]-4-yl)vinyl-1-yl(naphthalene-1-yl)-1H-phenanthro[9,10-d]imidazole (DDIBNPPI) and (E)-4-(2-(2-(-4'-1(2,3-dihyderobenzo[b][1,4]dioxin-5-yl)-4,5-diphenyl-1H-imidazole-2-yl)-[1,1'-biphenyl]-4-yl)vinyl)-1H-phenanthr[9,10-d]imidazole-1-yl)-1-napthronitrile (DDIBPPIN), were designed and synthesized. DDIBNPPI and DDIBPPIN were obtained by rupturing the covalent bond of phenanthrimidazole core to prevent aggregation-induced quenching. In DDIBPPIN, naphthonitrile group was incorporated into azomethine nitrogen of phenanthrimidazole to enhance charge-transfer ability. The DDIBPPIN/CBP:DDIBPPIN-based device shows blue emission with ηc (current efficiency) of 4.91/4.10 cd/A, ηp (power efficiency) of 4.56/3.84 lm/W, and ηex (external quantum efficiency) of 5.11/5.96%. The ηs (exciton utilization efficiency) values of DDIPNPPI and DDIBPPIN are of 27.0 and 30.3%, respectively. The DDIPNPPI and DDIBPPIN materials employed as a host to fabricate green and red phosphorescent organic light-emitting diodes. The red/white devices (with 0.4% dopant concentration) with DDIBPPIN:Ir(MDQ)2(acac) exhibit maximum L of 69889/26319 cd/m2, ηex of 19.6/16.6%, ηc of 34.6/35.6 cd/A, and ηp of 35.8/36.6 lm/W. The device with DDIBPPIN:Ir(ppy)3/DDIPNPPI:Ir(ppy)3 exhibits green emission [Commission Internationale de l'Eclairage (0.30,0.60)/(0.30,0.60)] with maximum L of 69906/69482 cd/m2, ηex of 17.9/17.0%, ηc of 59.8/58.6 cd/A, and ηp of 63.6/61.3 lm/W. The white device using DDIBPPI:Ir(ppy)3 (with 0.4% dopant concentration) exhibits maximum L of 22152 cd/m2, ηex of 15.8%, ηc of 31.4 cd/A, and ηp of 36.1 lm/W.
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