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Enhanced responsivity and detectivity of fast WSe₂ phototransistor using electrostatically tunable in-plane lateral p-n homojunction.

ABSTRACT: Layered transition metal dichalcogenides have shown tremendous potential for photodetection due to their non-zero direct bandgaps, high light absorption coefficients and carrier mobilities, and ability to form atomically sharp and defect-free heterointerfaces. A critical and fundamental bottleneck in the realization of high performance detectors is their trap-dependent photoresponse that trades off responsivity with speed. This work demonstrates a facile method of attenuating this trade-off by nearly 2x through integration of a lateral, in-plane, electrostatically tunable p-n homojunction with a conventional WSe₂ phototransistor. The tunable p-n junction allows modulation of the photocarrier population and width of the conducting channel independently from the phototransistor. Increased illumination current with the lateral p-n junction helps achieve responsivity enhancement upto 2.4x at nearly the same switching speed (14-16 µs) over a wide range of laser power (300 pW-33 nW). The added benefit of reduced dark current enhances specific detectivity (D*) by nearly 25x to yield a maximum measured flicker noise-limited D* of 1.1×10¹² Jones. High responsivity of 170 A/W at 300 pW laser power along with the ability to detect sub-1 pW laser switching are demonstrated.

SUBMITTER: Ghosh S

PROVIDER: S-EPMC8185115 | biostudies-literature |

REPOSITORIES: biostudies-literature

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