Designing zero-dimensional dimer-type all-inorganic perovskites for ultra-fast switching memory.

ABSTRACT: Resistive switching memory that uses halide perovskites (HP) has been considered as next-generation storage devices due to low operation voltage and high on/off ratio. However, the memory still faces challenges for stable operation with fast switching speed, which hinders the practical application. Thus, it should be considered from the stage of designing the HP for memory applications. Here, we design the perovskite memory using a high-throughput screening based on first-principles calculations. Total 696 compositions in four different crystal structures are investigated and essential parameters including stability, vacancy formation, and migration are considered as the descriptor. We select dimer-Cs₃Sb₂I₉ as an optimal HP for memory; the device that uses

SUBMITTER: Park Y 

PROVIDER: S-EPMC8192534 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature