Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Epitaxial lift-off of freestanding (011) and (111) SrRuO₃ thin films using a water sacrificial layer.

ABSTRACT: Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO₃ thin films using Sr₃Al₂O₆ water-sacrificial layer. The epitaxial Sr₃Al₂O₆(011) and Sr₃Al₂O₆(111) layers were realized on SrTiO₃(011) and SrTiO₃(111), respectively. Subsequently, SrRuO₃ films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO₃(011)_pc and SrRuO₃(111)_pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.

SUBMITTER: Le PTP

PROVIDER: S-EPMC8203781 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer.

Le Phu T P PTP Ten Elshof Johan E JE Koster Gertjan G

Scientific reports 20210614 1

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO3 thin films using Sr3Al2O6 water-sacrificial layer. The epitaxial Sr3Al2O6(011) and Sr3Al2O6(111) layers ...[more]

PMID: 34127715

Similar Datasets

Tuning electromagnetic properties of SrRuO3 epitaxial thin films via atomic control of cation vacancies.

Project description:Elemental defect in transition metal oxides is an important and intriguing subject that result in modifications in variety of physical properties including atomic and electronic structure, optical and magnetic properties. Understanding the formation of elemental vacancies and their influence on different physical properties is essential in studying the complex oxide thin films. In this study, we investigated the physical properties of epitaxial SrRuO3 thin films by systematically manipulating cation and/or oxygen vacancies, via changing the oxygen partial pressure (P(O2)) during the pulsed laser epitaxy (PLE) growth. Ru vacancies in the low-P(O2)-grown SrRuO3 thin films induce lattice expansion with the suppression of the ferromagnetic T C down to ~120?K. Sr vacancies also disturb the ferromagnetic ordering, even though Sr is not a magnetic element. Our results indicate that both A and B cation vacancies in an ABO3 perovskite can be systematically engineered via PLE, and the structural, electrical, and magnetic properties can be tailored accordingly.

| S-EPMC5599527 | biostudies-literature

Antiferroelectric PbSnO3 Epitaxial Thin Films.

Project description:In condensed matter physics, oxide materials show various intriguing physical properties. Therefore, many efforts are made in this field to develop functional oxides. Due to the excellent potential for tin-based perovskite oxides, an expansion of new related functional compounds is crucial. This work uses a heteroepitaxial approach supported by theoretical calculation to stabilize PbSnO3 thin films with different orientations. The analyses of X-ray diffraction and transmission electron microscopy unveil the structural information. A typical antiferroelectric feature with double hysteresis and butterfly loops is observed through electrical characterizations consistent with the theoretical prediction. The phase transition is monitored, and the transition temperatures are determined based on temperature-dependent structural and electrical characterizations. Furthermore, the microscopic antiferroelectric order is noticed under atomic resolution images via scanning transmission electron microscopy. This work offers a breakthrough in synthesizing epitaxial PbSnO3 thin films and comprehensively understanding its anisotropic antiferroelectric behavior.

| S-EPMC9762279 | biostudies-literature

Quasi-freestanding epitaxial silicene on Ag(111) by oxygen intercalation.

Project description:Silicene is a monolayer allotrope of silicon atoms arranged in a honeycomb structure with massless Dirac fermion characteristics similar to graphene. It merits development of silicon-based multifunctional nanoelectronic and spintronic devices operated at room temperature because of strong spin-orbit coupling. Nevertheless, until now, silicene could only be epitaxially grown on conductive substrates. The strong silicene-substrate interaction may depress its superior electronic properties. We report a quasi-freestanding silicene layer that has been successfully obtained through oxidization of bilayer silicene on the Ag(111) surface. The oxygen atoms intercalate into the underlayer of silicene, resulting in isolation of the top layer of silicene from the substrate. In consequence, the top layer of silicene exhibits the signature of a 1 × 1 honeycomb lattice and hosts massless Dirac fermions because of much less interaction with the substrate. Furthermore, the oxidized silicon buffer layer is expected to serve as an ideal dielectric layer for electric gating in electronic devices. These findings are relevant for the future design and application of silicene-based nanoelectronic and spintronic devices.

| S-EPMC4985226 | biostudies-literature

A Fast Route Towards Freestanding Single-Crystalline Oxide Thin Films by Using YBa2Cu3O7-x as a Sacrificial Layer.

Project description:Researchers have long been seeking multifunctional materials that can be adopted for next-generation nanoelectronics, and which, hopefully, are compatible with current semiconductor processing for further integration. Along this vein, complex oxides have gained numerous attention due to their versatile functionalities. Despite the fact that unbounded potential of complex oxides has been examined over the past years, one of the major challenges lies in the direct integration of these functional oxides onto existing devices or targeted substrates that are inherently incompatible in terms of oxide growth. To fulfill this goal, freestanding processes have been proposed, in which wet etching of inserted sacrificial layers is regarded as one of the most efficient ways to obtain epitaxial high-quality thin films. In this study, we propose using an alternative oxide, YBa2Cu3O7 (YCBO), as a sacrificial layer, which can be easily dissolved in light hydrochloric acid in a more efficient way, while protecting selected complex oxides intact. The high epitaxial quality of the selected complex oxide before and after freestanding process using YBCO as a sacrificial layer is comprehensively studied via a combination of atomic force microscopy, X-ray diffraction, transmission electron microscopy, and electrical transports. This approach enables direct integration of complex oxides with arbitrary substrates and devices and is expected to offer a faster route towards the development of low-dimensional quantum materials.

| S-EPMC7455685 | biostudies-literature

Spin State Disproportionation in Insulating Ferromagnetic LaCoO3 Epitaxial Thin Films.

Project description:The origin of insulating ferromagnetism in epitaxial LaCoO3 films under tensile strain remains elusive despite extensive research efforts are devoted. Surprisingly, the spin state of its Co ions, the main parameter of its ferromagnetism, is still to be determined. Here, the spin state in epitaxial LaCoO3 thin films is systematically investigated to clarify the mechanism of strain-induced ferromagnetism using element-specific X-ray absorption spectroscopy and dichroism. Combining with the configuration interaction cluster calculations, it is unambiguously demonstrated that Co3+ in LaCoO3 films under compressive strain (on LaAlO3 substrate) is practically a low-spin state, whereas Co3+ in LaCoO3 films under tensile strain (on SrTiO3 substrate) have mixed high-spin and low-spin states with a ratio close to 1:3. From the identification of this spin state ratio, it is inferred that the dark strips observed by high-resolution scanning transmission electron microscopy indicate the position of Co3+ high-spin state, i.e., an observation of a spin state disproportionation in tensile-strained LaCoO3 films. This consequently explains the nature of ferromagnetism in LaCoO3 films. The study highlights the importance of spin state degrees of freedom, along with thin-film strain engineering, in creating new physical properties that do not exist in bulk materials.

| S-EPMC10520649 | biostudies-literature

Capacitive humidity sensing properties of freestanding bendable porous SiO2/Si thin films.

Project description:The fabrication of freestanding bendable films without polymer substrates is demonstrated as a capacitive humidity-sensing material. The bendable and porous SiO2/Si films are simply prepared by electrochemical-assisted stripping, metal-assisted chemical etching, followed by oxidation procedures. The capacitive humidity-sensing properties of the fabricated porous SiO2/Si film are characterized as a function of the relative humidity and frequency. The remarkable sensing performance is demonstrated in the wide RH range from 13.8 to 79.0%. The sensing behavior of the porous SiO2/Si film is studied by electrochemical impedance spectroscopy analysis. Additionally, the reliability of the porous SiO2/Si sensing material is confirmed by cyclic and long-term sensing tests.

| S-EPMC9270390 | biostudies-literature

Large linear magnetoresistance in heavily-doped Nb:SrTiO3 epitaxial thin films.

Project description:Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tc superconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3 (Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3 is promising for the application in spintronic devices.

| S-EPMC5050504 | biostudies-literature

Deep-Ultraviolet Photodetectors Based on Epitaxial ZnGa2O4 Thin Films.

Project description:A single-crystalline ZnGa2O4 epilayer was successfully grown on c-plane (0001) sapphire substrate by metal-organic chemical vapor deposition. This epilayer was used as a ternary oxide semiconductor for application in high-performance metal-semiconductor-metal photoconductive deep-ultraviolet (DUV) photodetectors (PDs). At a bias of 5 V, the annealed ZnGa2O4 PDs showed better performance with a considerably low dark current of 1 pA, a responsivity of 86.3 A/W, cut-off wavelength of 280 nm, and a high DUV-to-visible discrimination ratio of approximately 107 upon exposure to 230 nm DUV illumination than that of as-grown ZnGa2O4 PDs. The as-grown PDs presented a dark current of 0.5 mA, a responsivity of 2782 A/W at 230 nm, and a photo-to-dark current contrast ratio of approximately one order. The rise time of annealed PDs was 0.5 s, and the relatively quick decay time was 0.7 s. The present results demonstrate that annealing process can reduce the oxygen vacancy defects and be potentially applied in ZnGa2O4 film-based DUV PD devices, which have been rarely reported in previous studies.

| S-EPMC6145910 | biostudies-literature

Dynamic phase transitions in freestanding polymer thin films.

Project description:After more than two decades of study, many fundamental questions remain unanswered about the dynamics of glass-forming materials confined to thin films. Experiments and simulations indicate that free interfaces enhance dynamics over length scales larger than molecular sizes, and this effect strengthens at lower temperatures. The nature of the influence of interfaces, however, remains a point of significant debate. In this work, we explore the properties of the nonequilibrium phase transition in dynamics that occurs in trajectory space between high- and low-mobility basins in a set of model polymer freestanding films. In thick films, the film-averaged mobility transition is broader than the bulk mobility transition, while in thin films it is a variant of the bulk result shifted toward a higher bias. Plotting this transition's local coexistence points against the distance from the films' surface shows thick films have surface and film-center transitions, while thin films practically have a single transition throughout the film. These observations are reminiscent of thermodynamic capillary condensation of a vapor-liquid phase between parallel plates, suggesting they constitute a demonstration of such an effect in a trajectory phase transition in the dynamics of a structural glass former. Moreover, this transition bears similarities to several experiments exhibiting anomalous behavior in the glass transition upon reducing film thickness below a material-dependent onset, including the broadening of the glass transition and the homogenization of surface and bulk glass transition temperatures.

| S-EPMC7568329 | biostudies-literature

Giant Periodic Pseudomagnetic Fields in Strained Kagome Magnet FeSn Epitaxial Films on SrTiO3(111) Substrate.

Project description:Quantum materials, particularly Dirac materials with linearly dispersing bands, can be effectively tuned by strain-induced lattice distortions leading to a pseudomagnetic field that strongly modulates their electronic properties. Here, we grow kagome magnet FeSn films, consisting of alternatingly stacked Sn2 honeycomb (stanene) and Fe3Sn kagome layers, on SrTiO3(111) substrates by molecular beam epitaxy. Using scanning tunneling microscopy/spectroscopy, we show that the Sn honeycomb layer can be periodically deformed by epitaxial strain for a film thickness below 10 nm, resulting in differential conductance peaks consistent with Landau levels generated by a pseudomagnetic field greater than 1000 T. Our findings demonstrate the feasibility of strain engineering the electronic properties of topological magnets at the nanoscale.

| S-EPMC10037333 | biostudies-literature