Large-Area, Two-Dimensional MoS₂ Exfoliated on Gold: Direct Experimental Access to the Metal-Semiconductor Interface.

ABSTRACT: Two-dimensional semiconductors such as MoS₂ are promising for future electrical devices. The interface to metals is a crucial and critical aspect for these devices because undesirably high resistances due to Fermi level pinning are present, resulting in unwanted energy losses. To date, experimental information on such junctions has been obtained mainly indirectly by evaluating transistor characteristics. The fact that the metal-semiconductor interface is typically embedded, further complicates the investigation of the underlying physical mechanisms at the interface. Here, we present a method to provide access to a realistic metal-semiconductor interface by large-area exfoliation of single-layer MoS₂ on clean polycrystalline gold surfaces. This approach allows us to me

SUBMITTER: Pollmann E 

PROVIDER: S-EPMC8223410 | biostudies-literature | 2021 Jun

REPOSITORIES: biostudies-literature