Browse
Submit Data
Databases
API
Help

Dataset Information

37 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Impact of Ar Flow Rates on Micro-Structural Properties of WS₂ Thin Film by RF Magnetron Sputtering.

ABSTRACT: Tungsten disulfide (WS₂) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS₂ thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 10¹⁴ to 26.29 × 10¹⁵ lines/m². All these findings indicate that as-grown WS₂ films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS₂ thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS₂ thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS₂ thin film. Finally, the simulation study validates the experimental results and encourages the use of WS₂ as a buffer layer of CdTe-based solar cells.

SUBMITTER: Akhtaruzzaman M

PROVIDER: S-EPMC8306877 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Dataset on microstructural, structural and tribology characterization of TiC thin film on CpTi substrate grown by RF magnetron sputtering.

Project description:The datasets in this article are supplementary to the corresponding research article [1, 2]. The planar morphology and topography of TiC thin films coated on commercially pure Titanium (CpTi) grown by RF magnetron sputtering were investigated using Field emission scanning electron microscope (FESEM) and Atomic force microscope (AFM). The mechanical properties such as Hardness and Young Modulus of the thin film coating was studied using Nanohardness. Furthermore, grazing incidence X-ray diffractometer (GIXRD) and Raman spectroscopy were used to analyse the structural and composition of the TiC thin film coating.

| S-EPMC7005493 | biostudies-literature

High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering.

Project description:The two-dimensional layered semiconducting tungsten disulfide (WS2) film exhibits great promising prospects in the photoelectrical applications because of its unique photoelectrical conversion property. Herein, in this paper, we report the simple and scalable fabrication of homogeneous, large-size and transferable WS2 films with tens-of-nanometers thickness through magnetron sputtering and post annealing process. The produced WS2 films with low resistance (4.2 kΩ) are used to fabricate broadband sensitive photodetectors in the ultraviolet to visible region. The photodetectors exhibit excellent photoresponse properties, with a high responsivity of 53.3 A/W and a high detectivity of 1.22 × 10(11) Jones at 365 nm. The strategy reported paves new way towards the large scale growth of transferable high quality, uniform WS2 films for various important applications including high performance photodetectors, solar cell, photoelectrochemical cell and so on.

| S-EPMC4731746 | biostudies-other

Quasi-two-dimensional α-molybdenum oxide thin film prepared by magnetron sputtering for neuromorphic computing.

Project description:Two-dimensional (2D) layered materials have attracted intensive attention in recent years due to their rich physical properties, and shown great promise due to their low power consumption and high integration density in integrated electronics. However, mostly limited to mechanical exfoliation, large scale preparation of the 2D materials for application is still challenging. Herein, quasi-2D α-molybdenum oxide (α-MoO3) thin film with an area larger than 100 cm2 was fabricated by magnetron sputtering, which is compatible with modern semiconductor industry. An all-solid-state synaptic transistor based on this α-MoO3 thin film is designed and fabricated. Interestingly, by proton intercalation/deintercalation, the α-MoO3 channel shows a reversible conductance modulation of about four orders. Several indispensable synaptic behaviors, such as potentiation/depression and short-term/long-term plasticity, are successfully demonstrated in this synaptic device. In addition, multilevel data storage has been achieved. Supervised pattern recognition with high recognition accuracy is demonstrated in a three-layer artificial neural network constructed on this α-MoO3 based synaptic transistor. This work can pave the way for large scale production of the α-MoO3 thin film for practical application in intelligent devices.

| S-EPMC9199084 | biostudies-literature

Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method.

Project description:In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 μm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the -6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 μm.

| S-EPMC8624261 | biostudies-literature

Application-Specific Oxide-Based and Metal-Dielectric Thin-Film Materials Prepared by Radio Frequency Magnetron Sputtering.

Project description:We report on the development of several different thin-film functional material systems prepared by radio frequency (RF) magnetron sputtering at Edith Cowan University nanofabrication labs. While focusing on the RF sputtering process optimizations for new or the previously underexplored material compositions and multilayer structures, we disclose several unforeseen material properties and behaviours. Among these are an unconventional magnetic hysteresis loop with an intermediate saturation state observed in garnet trilayers, and an ultrasensitive magnetic switching behaviour in garnet-oxide composites (GOC). We also report on the unusually high thermal exposure stability observed in some nanoengineered metal-dielectric multilayers. We communicate research results related to the design, prototyping, and practical fabrication of high-performance magneto-optic (MO) materials, oxide-based sensor components, and heat regulation coatings for advanced construction and solar windows.

| S-EPMC6829262 | biostudies-literature

HRTEM Microstructural Characterization of β-WO3 Thin Films Deposited by Reactive RF Magnetron Sputtering.

Project description:Though tungsten trioxide (WO3) in bulk, nanosphere, and thin film samples has been extensively studied, few studies have been dedicated to the crystallographic structure of WO3 thin films. In this work, the evolution from amorphous WO3 thin films to crystalline WO3 thin films is discussed. WO3 thin films were fabricated on silicon substrates (Si/SiO2) by RF reactive magnetron sputtering. Once a thin film was deposited, two successive annealing treatments were made: an initial annealing at 400 °C for 6 h was followed by a second annealing at 350 °C for 1 h. Film characterization was carried out by X-ray diffraction (XRD), high-resolution electron transmission microscopy (HRTEM), scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques. The β-WO3 final phase grew in form of columnar crystals and its growth plane was determined by HRTEM.

| S-EPMC5459164 | biostudies-other

Temperature-Dependent Amplified Spontaneous Emission in CsPbBr<sub>3</sub> Thin Films Deposited by Single-Step RF-Magnetron Sputtering.

Project description:Due to their high optical efficiency, low-cost fabrication and wide variety in composition and bandgap, halide perovskites are recognized nowadays as real contenders for the development of the next generation of optoelectronic devices, which, among others, often require high quality over large areas which is readily attainable by vacuum deposition. Here, we report the amplified spontaneous emission (ASE) properties of two CsPbBr3 films obtained by single-step RF-magnetron sputtering from a target containing precursors with variable compositions. Both the samples show ASE over a broad range of temperatures from 10 K up to 270 K. The ASE threshold results strongly temperature dependent, with the best performance occurring at about 50 K (down to 100 µJ/cm2), whereas at higher temperatures, there is evidence of thermally induced optical quenching. The observed temperature dependence is consistent with exciton detrapping up to about 50 K. At higher temperatures, progressive free exciton dissociation favors higher carrier mobility and increases trapping at defect states with consequent emission reduction and increased thresholds. The reported results open the way for effective large-area, high quality, organic solution-free deposited perovskite thin films for optoelectronic applications, with a remarkable capability to finely tune their physical properties.

| S-EPMC9866928 | biostudies-literature

Effects of Film Thickness on the Residual Stress of Vanadium Dioxide Thin Films Grown by Magnetron Sputtering.

Project description:Vanadium dioxide (VO2) thin films of different thicknesses were prepared by regulating the deposition time (2, 2.5, 3, and 3.5 h). The impact of deposition time on the microstructure, surface morphology, and cross-section morphology was investigated. The results showed that the grain size increased with the film thickness. Meanwhile, the influence of film thickness on the residual stress was evaluated by X-ray diffraction. The phenomenon of "compressive-to-tensile stress transition" was illustrated as the thickness increased. The change of dominant mechanism for residual stress was used for explaining this situation. First, the composition of residual stress indicates that growth stress play a key role. Then, the effect of "atomic shot peening" can be used to explain the compressive stress. Lastly, the increased grain size, lower grain boundary density, and "tight effect" in the progress of film growth cause tensile stress.

| S-EPMC10386697 | biostudies-literature

Fabrication of black aluminium thin films by magnetron sputtering.

Project description:Black aluminium thin films were prepared by direct current (DC) pulsed magnetron sputtering. The N2 concentration in the Ar-N2 mixture that was used as the deposition atmosphere was varied from 0 to 10%, and its impact on the film growth and optical properties was studied. A strong change in the film growth process was observed as a function of the N2 concentration. At a specific N2 concentration of ∼6%, the Al film growth process favoured the formation of a moth-eye-like antireflective surface. This surface morphology, which was similar to the structure of a cauliflower, is known to trap incident light, resulting in films with a very low reflectivity. A diffuse reflectivity lower than 4% was reached in the ultraviolet-visible-near infrared (UV-VIS-NIR) spectral range that corresponds to a value observed for an ultrahigh absorber. We found that for the preparation of black aluminium, the nitrogen content plays an important role in film formation and the resulting film morphology.

| S-EPMC9054304 | biostudies-literature

Novel Physical Vapor Deposition Approach to Hybrid Perovskites: Growth of MAPbI<sub>3</sub> Thin Films by RF-Magnetron Sputtering.

Project description:Solution-based methods represent the most widespread approach used to deposit hybrid organic-inorganic perovskite films for low-cost but efficient solar cells. However, solution-process techniques offer limited control over film morphology and crystallinity, and most importantly do not allow sequential film deposition to produce perovskite-perovskite heterostructures. Here the successful deposition of CH3NH3PbI3 (MAPI) thin films by RF-magnetron sputtering is reported, an industry-tested method to grow large area devices with precisely controlled stoichiometry. MAPI films are grown starting from a single-target made of CH3NH3I (MAI) and PbI2. Films are single-phase, with a barely detectable content of unreacted PbI2, full surface coverage and thickness ranging from less than 200 nm to more than 3 μm. Light absorption and emission properties of the deposited films are comparable to as-grown solution-processed MAPI films. The development of vapor-phase deposition methods is of interest to advance perovskite photovoltaic devices with the possibility of fabricating perovskite multijunction solar cells or multicolor bright light-emitting devices in the whole visible spectrum.

| S-EPMC6193984 | biostudies-literature