Unknown

Dataset Information

0

Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon.


ABSTRACT: The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.

SUBMITTER: Markevich A 

PROVIDER: S-EPMC8327312 | biostudies-literature |

REPOSITORIES: biostudies-literature

Similar Datasets

| S-EPMC6089495 | biostudies-literature
| S-EPMC4842981 | biostudies-literature
| S-EPMC5095180 | biostudies-literature
| S-EPMC5428036 | biostudies-literature
| S-EPMC4660392 | biostudies-other
| S-EPMC7447757 | biostudies-literature
| S-EPMC5647419 | biostudies-literature
| S-EPMC8482752 | biostudies-literature
| S-EPMC2730964 | biostudies-literature
| S-EPMC7604939 | biostudies-literature