Dataset Information

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene).

ABSTRACT: Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N'-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μ_e* = 5 × 10^-4 cm²×(Vs)^-1]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μ_h* = 0.9 × 10^-4 cm²×(Vs)^-1]. Due to the chemical nature and energy levels, the hole transport was not expected for NDIC8-based system. Polarized optical- and scanning electron microscopies indicated that the solvent vapor annealing of the NDIC8:P3HT films caused a transition of their fine-grained morphology to the network of branched, dendritic crystallites. Grazing incidence wide-angle X-ray scattering studies indicated that the above transition was accompanied by a change in the crystal structure of NDIC8. The isotropic crystal structure of NDIC8 in the untreated film was identical to the known crystal structure of the bulk NDIC8. After the solvent annealing the crystal structure of NDIC8 changed to a not-yet-reported polymorph, that, unlike in the untreated film, was partially oriented with respect to the OFET substrate.

SUBMITTER: Janus K

PROVIDER: S-EPMC8375403 | biostudies-literature | 2021

REPOSITORIES: biostudies-literature

ACCESS DATA

Publications

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene).

Janus Krzysztof K Danielewicz Kinga K Chlebosz Dorota D Goldeman Waldemar W Kiersnowski Adam A

Frontiers in chemistry 20210805

Herein we report on fabrication and properties of organic field-effect transistors (OFETs) based on the spray-coated films of N,N'-dioctyl naphthalene diimide (NDIC8) doped with 2.4 wt% of poly (3-hexylthiophene) (P3HT). OFETs with the untreated NDIC8:P3HT films revealed electron conductivity [μe* = 5 × 10-4 cm2×(Vs)-1]. After the annealing in chloroform vapor the NDIC8:P3HT films revealed the hole transport only [μh* = 0.9 × 10-4 ...[more]

PMID: 34422763

Similar Datasets

Project description:During the nanoimprinting lithography (NIL) process, the role of solvent vapor in fabricating the pattern structure and inducing the molecular alignment of nanoimprinted polymer film has been attracting significant attention. We demonstrate here that the molecular orientation and thermal stability of poly(3-hexylthiophene) (P3HT) nanograting film can be affected obviously by the fabricated solvent vapor. A solvent-vapor nanoimprinting lithography (SV-NIL) technique based on a polydimethylsiloxane (PDMS) template is employed to fabricate a P3HT nanograting structure film successfully and solvent vapor is offered by chlorobenzene, chloroform and carbon disulphide, respectively. The molecular orientation of the polymer film is carefully characterized by grazing incidence wide angle X-ray diffraction (GIWAXD) measurements to investigate the effect of various solvent vapors on the molecular orientation of the P3HT nanograting film. For the P3HT nanograting film fabricated by chloroform and chlorobenzene solvent, the edge-on molecular orientation of the typical form II crystallographic structure is induced. However, this indicates that there are both the face-on molecular orientations of the form II and form I crystallographic conformation present for the P3HT nanograting film fabricated by carbon disulphide solvent. Therefore, the fabricated solvent vapor plays a significant role in determining the formation of the molecular orientation of the polymer nanostructure. Then, the role of thermal annealing in the stability of the molecular orientation was investigated for the P3HT nanograting film after a fixed temperature. As for the annealed nanograting film fabricated by chlorobenzene and chloroform solvent vapor, a single edge-on molecular orientation mode of the form I crystallographic structure has been obtained. However, for the annealed nanograting film fabricated by the carbon disulphide solvent, the edge-on and face-on molecular orientations of the form I crystallographic structure are still retained. This indicates that the stability of the form II crystallographic conformation is mainly dependent on the thermal annealing process. Therefore, after the annealing process, the final determining of the molecular alignment and crystallographic conformation depends significantly on the orientation type of the nanograting film before the annealing history, and it can be further inferred that the molecular orientation of the annealed polymer film is still affected by the fabricated solvent vapor significantly. Thus this will provide new understanding and guidance for the research of the topographical structure and molecular alignment of conjugated polymers.

Project description:The self-assembly of ultra-high molecular weight (UHMW) block copolymers (BCPs) remains a complex and time-consuming endeavor owing to the high kinetic penalties associated with long polymer chain entanglement. In this work, we report a unique strategy of overcoming these kinetic barriers through precision solvent annealing of an UHMW polystyrene-block-poly(2-vinylpyridine) BCP system (M w: ∼800 kg/mol) by fast swelling to very high levels of solvent concentration (ϕs). Phase separation on timescales of ∼10 min is demonstrated once a thickness-dependent threshold ϕs value of ∼0.80-0.86 is achieved, resulting in lamellar feature spacings of over 190 nm. The threshold ϕs value was found to be greater for films with higher dry thickness (D 0) values. Tunability of the domain morphology is achieved through controlled variation of both D 0 and ϕs, with the kinetically unstable hexagonal perforated lamellar (HPL) phase observed at ϕs values of ∼0.67 and D 0 values of 59-110 nm. This HPL phase can be controllably induced into an order-order transition to a lamellar morphology upon further increase of ϕs to 0.80 or above. As confirmed by grazing-incidence small-angle X-ray scattering, the lateral ordering of the lamellar domains is shown to improve with increasing ϕs up to a maximum value at which the films transition to a disordered state. Thicker films are shown to possess a higher maximum ϕs value before transitioning to a disordered state. The swelling rate is shown to moderately influence the lateral ordering of the phase-separated structures, while the amount of hold time at a particular value of ϕs does not notably enhance the phase separation process. These large period self-assembled lamellar domains are then employed to facilitate pattern transfer using a liquid-phase infiltration method, followed by plasma etching, generating ordered, high aspect ratio Si nanowall structures with spacings of ∼190 nm and heights of up to ∼500 nm. This work underpins the feasibility of a room-temperature, solvent-based annealing approach for the reliable and scalable fabrication of sub-wavelength nanostructures via BCP lithography.

Dataset Information

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene).

Publications

Electron-to Hole Transport Change Induced by Solvent Vapor Annealing of Naphthalene Diimide Doped with Poly(3-Hexylthiophene).

Similar Datasets

OmicsDI is part of the ELIXIR infrastructure

Tweets