Browse
Submit Data
Databases
API
Help

Dataset Information

7 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Synthesis, Characterization, and Thermal Study of Divalent Germanium, Tin, and Lead Triazenides as Potential Vapor Deposition Precursors.

ABSTRACT: Only a few M-N bonded divalent group 14 precursors are available for vapor deposition, in particular for Ge and Pb. A majority of the reported precursors are dicoordinated with the Sn(II) amidinates, the only tetracoordinated examples. No Ge(II) and Pb(II) amidinates suitable for vapor deposition have been demonstrated. Herein, we present tetracoordinated Ge(II), Sn(II), and Pb(II) complexes bearing two sets of chelating 1,3-di-tert-butyltriazenide ligands. These compounds are thermally stable, sublime quantitatively between 60 and 75 °C (at 0.5 mbar), and show ideal single-step volatilization by thermogravimetric analysis.

SUBMITTER: Samii R

PROVIDER: S-EPMC8424630 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Synthesis, Structure, and Thermal Properties of Volatile Group 11 Triazenides as Potential Precursors for Vapor Deposition.

Project description:Group 11 thin films are desirable as interconnects in microelectronics. Although many M-N-bonded Cu precursors have been explored for vapor deposition, there is currently a lack of suitable Ag and Au derivatives. Herein, we present monovalent Cu, Ag, and Au 1,3-di-tert-butyltriazenides that have potential for use in vapor deposition. Their thermal stability and volatility rival that of current state-of-the-art group 11 precursors with bidentate M-N-bonded ligands. Solution-state thermolysis of these triazenides yielded polycrystalline films of elemental Cu, Ag, and Au. The compounds are therefore highly promising as single-source precursors for vapor deposition of coinage metal films.

| S-EPMC9795554 | biostudies-literature

Vapor Phase Synthesis of SnS Facilitated by Ligand-Driven "Launch Vehicle" Effect in Tin Precursors.

Project description:Extraordinary low-temperature vapor-phase synthesis of SnS thin films from single molecular precursors is attractive over conventional high-temperature solid-state methods. Molecular-level processing of functional materials is accompanied by several intrinsic advantages such as precise control over stoichiometry, phase selective synthesis, and uniform substrate coverage. We report here on the synthesis of a new heteroleptic molecular precursor containing (i) a thiolate ligand forming a direct Sn-S bond, and (ii) a chelating O^N^N-donor ligand introducing a "launch vehicle"-effect into the synthesized compound, thus remarkably increasing its volatility. The newly synthesized tin compound [Sn(SBut)(tfb-dmeda)] 1 was characterized by single-crystal X-ray diffraction analysis that verified the desired Sn:S ratio in the molecule, which was demonstrated in the direct conversion of the molecular complex into SnS thin films. The multi-nuclei (1H, 13C, 19F, and 119Sn) and variable-temperature 1D and 2D NMR studies indicate retention of the overall solid-state structure of 1 in the solution and suggest the presence of a dynamic conformational equilibrium. The fragmentation behavior of 1 was analyzed by mass spectrometry and compared with those of homoleptic tin tertiary butyl thiolates [Sn(SBut)2] and [Sn(SBut)4]. The precursor 1 was then used to deposit SnS thin films on different substrates (FTO, Mo-coated soda-lime glass) by CVD and film growth rates at different temperatures (300-450 °C) and times (15-60 min), film thickness, crystalline quality, and surface morphology were investigated.

| S-EPMC8433875 | biostudies-literature

Chemical vapor deposition of germanium-rich CrGe x nanowires.

Project description:Chemical vapor deposition was applied to synthetize nanostructured deposits containing several sorts of nanoobjects (i.e., nanoballs, irregular particles, and nanowires). Analytical techniques, that is, high-resolution transmission electron microscopy, scanning electron microscopy, electron dispersive X-ray analysis, selected area electron diffraction, and X-ray photoelectron spectroscopy, showed that unlike nanoballs and particles composed of crystalline germanium, the layer was made of chromium germanide CrGe x . The nanowires possessed a complex structure, namely a thin crystalline germanium core and amorphous CrGe x coating. The composition of the nanowire coating was [Cr]/[Ge] = 1:(6-7). The resistance of the nanowire-deposit system was estimated to be 2.7 kΩ·cm using an unique vacuum contacting system.

| S-EPMC8685558 | biostudies-literature

Large-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition.

Project description:We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to precracking coupled with substrate mediated physicochemical processes like diffusion, polymerization etc., led to graphene growth. We further confirmed our mechanistic hypothesis by depositing graphene on Ni and SiO(2)/Si substrates. HFTCVD can be further extended to dope graphene with various heteroatoms (H, N, and B, etc.,), combine with functional materials (diamond, carbon nanotubes etc.,) and can be extended to all other materials (Si, SiO(2), SiC etc.,) and processes (initiator polymerization, TFT processing) possible by HFCVD and thermal CVD.

| S-EPMC3448070 | biostudies-literature

Synthesis and Characterization of Tungsten Nitrido Amido Guanidinato Complexes as Precursors for Chemical Vapor Deposition of WNxCy Thin Films.

Project description:Tungsten nitrido amido guanidinato complexes of the type WN(NR2)[(NR')2C(NR2)]2 (R = Me, Et; R' = i Pr, Cy) were synthesized as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WNxCy thin films. The reaction of tungsten nitrido amido complexes of the type WN(NR2)3 (R = Me, Et) with two equivalents of a carbodiimide R'N=C=NR' (R' = i Pr, Cy) resulted in two insertions of a carbodiimide into W-N(amido) bonds, affording bis(guanidinato) amido nitrido tungsten complexes. These compounds were characterized by 14N NMR, indicating distinctive chemical shifts for each type of N-bound ligand. Crystallographic structure determination of WN(NMe2)[(N i Pr)2C(NMe2)]2 showed the guanidinato ligands to be non-equivalent. The complex WN(NMe2)[(N i Pr)2C(NMe2)]2 was demonstrated to serve as a precursor for AACVD of WNxCy thin films, resulting in featureless, X-ray amorphous thin films for growth temperatures 200 - 400 °C.

| S-EPMC6715305 | biostudies-literature

The microsomal metabolism of the organometallic derivatives of the group-IV elements, germanium, tin and lead.

Project description:The NADPH- and oxygen-dependent microsomal metabolism of the di-, tri- and tetra-ethyl-substituted derivatives of germanium, tin and lead was shown to give rise to ethylene as a major product and ethane as a minor product. These reactions were shown to be catalysed by the liver microsomal cytochrome P-450-dependent mono-oxygenase. Since formation of ethane and ethylene was differentially inhibited by anaerobiosis, the results suggest that at least a large portion of the ethane produced may be derived by a reductive mechanism. Triethyltin bromide in both the absence and presence of NADPH was shown to convert cytochrome P-450 into cytochrome P-420 and to affect the function of the mono-oxygenase in vitro. Tetraethyltin caused the NADPH- and time-dependent formation of cytochrome P-420, suggesting that tetraethyltin is converted into triethyltin salts in significant concentrations. The order of potency in formation of cytochrome P-420 was closely paralleled by the ability of the tin derivatives to induce microsomal lipid peroxidation in vitro.

| S-EPMC1163096 | biostudies-other

An Aerosol-Assisted Chemical Vapor Deposition Route to Tin-Doped Gallium Oxide Thin Films with Optoelectronic Properties.

Project description:Gallium oxide is a wide-bandgap compound semiconductor material renowned for its diverse applications spanning gas sensors, liquid crystal displays, transparent electrodes, and ultraviolet detectors. This paper details the aerosol assisted chemical vapor deposition synthesis of tin doped gallium oxide thin films using gallium acetylacetonate and monobutyltin trichloride dissolved in methanol. It was observed that Sn doping resulted in a reduction in the transmittance of Ga2O3 films within the visible spectrum, while preserving the wide bandgap characteristics of 4.8 eV. Furthermore, Hall effect testing revealed a substantial decrease in the resistivity of Sn-doped Ga2O3 films, reducing it from 4.2 × 106 Ω cm to 2 × 105 Ω cm for the 2.5 at. % Sn:Ga2O3 compared to the nominally undoped Ga2O3.

| S-EPMC11360363 | biostudies-literature

Synthesis and optical properties of lead-free cesium germanium halide perovskite quantum rods.

Project description:Herein, the fabrication of a lead-free cesium germanium halide perovskite produced via a simple solvothermal process is reported for the first time. By tuning the composition of the CsGeX3 quantum rods, a power conversion efficiency of 4.92% under AM 1.5 G was achieved.

| S-EPMC9080572 | biostudies-literature

Crystalline Germanium(I) and Tin(I) Centered Radical Anions.

Project description:An isostructural series of heavy Group 14 E(I) radical anions (Ge, Sn, Pb), stabilized by a bulky xanthene-based diamido ligand are reported. The radical anions were synthesised by the one-electron reduction of their corresponding E(II) precursor complexes with sodium naphthalenide in THF, yielding the radical anions as charge-separated sodium salts. The series of main group radicals have been comprehensively characterized by EPR spectroscopy, X-ray crystallography and DFT analysis, which reveal that in all cases, the spin density of the unpaired electron almost exclusively resides in a p-orbital of π symmetry located on the Group 14 center.

| S-EPMC9401049 | biostudies-literature

Stability Evaluation of Candidate Precursors for Chemical Vapor Deposition of Hafnium Diboride (HfB2).

Project description:Alternative candidate precursors to [Hf(BH4)4] for low-temperature chemical vapor deposition of hafnium diboride (HfB2) films were identified using density functional theory simulations of molecules with the composition [Hf(BH4)2L2], where L = -OH, -OMe, -O-t-Bu, -NH2, -N=C=O, -N(Me)2, and -N(CH2)5NH2 (1-piperidin-2-amine referred to as Pip2A). Disassociation energies (E D), potential energy surface (PES) scans, ionization potentials, and electron affinities were all calculated to identify the strength of the Hf-L bond and the potential reactivity of the candidate precursor. Ultimately, the low E D (2.07 eV) of the BH4 ligand removal from the Hf atom in [Hf(BH4)4] was partially attributed to an intermediate state where [Hf(BH4)3(H)] and BH3 is formed. Of the candidate precursors investigated, three exhibited a similar mechanism, but only -Pip2A had a PES scan that indicated binding competitive with [Hf(BH4)4], making it a viable candidate for further study.

| S-EPMC8153926 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data