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Localization to delocalization probed by magnetotransport of hBN/graphene/hBN stacks in the ultra-clean regime.


ABSTRACT: We report on magnetotransport in a high-quality graphene device, which is based on monolayer graphene (Gr) encapsulated by hexagonal boron nitride (hBN) layers, i.e., hBN/Gr/hBN stacks. In the vicinity of the Dirac point, a negative magnetoconductance is observed for high temperatures >  ~ 40 K, whereas it becomes positive for low temperatures ≤  ~ 40 K, which implies an interplay of quantum interferences in Dirac materials. The elastic scattering mechanism in hBN/Gr/hBN stacks contrasts with that of conventional graphene on SiO2, and our ultra-clean graphene device shows nonzero magnetoconductance for high temperatures of up to 300 K.

SUBMITTER: Iwasaki T 

PROVIDER: S-EPMC8458370 | biostudies-literature |

REPOSITORIES: biostudies-literature

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