A Novel Carbon-Assisted Chemical Vapor Deposition Growth of Large-Area Uniform Monolayer MoS₂ and WS₂.

ABSTRACT: Monolayer MoS₂ can be used for various applications such as flexible optoelectronics and electronics due to its exceptional optical and electronic properties. For these applications, large-area synthesis of high-quality monolayer MoS₂ is highly desirable. However, the conventional chemical vapor deposition (CVD) method using MoO₃ and S powder has shown limitations in synthesizing high-quality monolayer MoS₂ over a large area on a substrate. In this study, we present a novel carbon cloth-assisted CVD method for large-area uniform synthesis of high-quality monolayer MoS₂. While the conventional CVD method produces thick MoS₂ films in the center of the substrate and forms MoS₂ monolayers at the edge of the thick MoS₂ films, our carbon cloth-assisted CVD method uniformly grows high-quality monolayer MoS₂ in the center of the substrate. The as-synthesized monolayer MoS₂ was characterized in detail by Raman/photoluminescence spectroscopy, atomic force microscopy, and transmission electron microscopy. We reveal the growth process of monolayer MoS₂ initiated from MoS₂ seeds by synthesizing monolayer MoS₂ with varying reaction times. In addition, we show that the CVD method employing carbon powder also produces uniform monolayer MoS₂ without forming thick MoS₂ films in the center of the substrate. This confirms that the large-area growth of monolayer MoS₂ using the carbon cloth-assisted CVD method is mainly due to reducing properties of the carbon material, rather than the effect of covering the carbon cloth. Furthermore, we demonstrate that our carbon cloth-assisted CVD method is generally applicable to large-area uniform synthesis of other monolayer transition metal dichalcogenides, including monolayer WS₂.

SUBMITTER: Bae J 

PROVIDER: S-EPMC8468553 | biostudies-literature |

REPOSITORIES: biostudies-literature