Project description:Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.
Project description:The successful implementation of perovskite light-emitting diodes (PeLEDs) in advanced displays and lighting has proven to be challenging because of the inferior performance of blue devices. Here, we point out that a strained system would lead to the quasi-degenerate energy state to enhance the excited-state transition due to the formation of double-polarized transition channel. The tensile strained structure also brings about a synergetic control of the carrier dynamics in virtue of lattice structure deformation and reduced dimensional phase regulation to promote carrier population in large bandgap domains and to realize near-unit energy transfer from the large bandgap phases to the emitter phases. Accordingly, high external quantum efficiencies of 14.71 and 10.11% are achieved for the 488- and 483-nanometer PeLEDs. This work represents a versatile strategy using a strained system to achieve enhanced radiative emission for the development of efficient PeLEDs.
Project description:The efficiencies of green and red perovskite light-emitting diodes (PeLEDs) have been increased close to their theoretical upper limit, while the efficiency of blue PeLEDs is lagging far behind. Here we report enhancing the efficiency of sky-blue PeLEDs by overcoming a major hurdle of low photoluminescence quantum efficiency in wide-bandgap perovskites. Blending phenylethylammonium chloride into cesium lead halide perovskites yields a mixture of two-dimensional and three-dimensional perovskites, which enhances photoluminescence quantum efficiency from 1.1% to 19.8%. Adding yttrium (III) chloride into the mixture further enhances photoluminescence quantum efficiency to 49.7%. Yttrium is found to incorporate into the three-dimensional perovskite grain, while it is still rich at grain boundaries and surfaces. The yttrium on grain surface increases the bandgap of grain shell, which confines the charge carriers inside grains for efficient radiative recombination. Record efficiencies of 11.0% and 4.8% were obtained in sky-blue and blue PeLEDs, respectively.
Project description:Recently, quasi-two-dimensional (Q-2D) perovskites have received much attention due to their excellent photophysical properties. Phase compositions in Q-2D perovskites have obvious effect on the device performance. Here, efficient green perovskite light-emitting diodes (PeLEDs) were fabricated by employing o-fluorophenylethylammonium bromide (o-F-PEABr) and 2-aminoethanol hydrobromide (EOABr) as the mix-interlayer ligands. Phase compositions are rationally optimized through composition and interlayer engineering. Meanwhile, non-radiative recombination is greatly suppressed by the introduction of mix-interlayer ligands. Thus, green PeLEDs with a peak photoluminescence quantum yield (PLQY) of 81.4%, a narrow full width at half maximum (FWHM) of 19 nm, a maximum current efficiency (CE) of 27.7 cd/A, and a maximum external quantum efficiency (EQE) of 10.4% were realized. The results are expected to offer a feasible method to realize high-efficiency PeLEDs.
Project description:Recently, metal halide perovskite light-emitting diodes (Pero-LEDs) have achieved significant improvement in device performance, especially for external quantum efficiency (EQE). And EQE is mostly determined by internal quantum efficiency of the emitting material, charge injection balancing factor (ηc), and light extraction efficiency (LEE) of the device. Herein, an ultrathin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (UT-PEDOT:PSS) hole transporter layer is prepared by a water stripping method, and the UT-PEDOT:PSS can enhance ηc and LEE simultaneously in Pero-LEDs, mostly due to the improved carrier mobility, more matched energy level alignment, and reduced photon loss. More importantly, the performance enhancement from UT-PEDOT:PSS is quite universal and applicable in different kinds of Pero-LEDs. As a result, the EQEs of Pero-LEDs based on 3D, quasi-3D, and quasi-2D perovskites obtain enhancements of 42%, 87%, and 111%, and the corresponding maximum EQE reaches 17.6%, 15.0%, and 6.8%, respectively.
Project description:Reducing environmental impact is a key challenge for perovskite optoelectronics, as most high-performance devices are based on potentially toxic lead-halide perovskites. For photovoltaic solar cells, tin-lead (Sn-Pb) perovskite materials provide a promising solution for reducing toxicity. However, Sn-Pb perovskites typically exhibit low luminescence efficiencies, and are not ideal for light-emitting applications. Here we demonstrate highly luminescent germanium-lead (Ge-Pb) perovskite films with photoluminescence quantum efficiencies (PLQEs) of up to ~71%, showing a considerable relative improvement of ~34% over similarly prepared Ge-free, Pb-based perovskite films. In our initial demonstration of Ge-Pb perovskite LEDs, we achieve external quantum efficiencies (EQEs) of up to ~13.1% at high brightness (~1900 cd m-2), a step forward for reduced-toxicity perovskite LEDs. Our findings offer a new solution for developing eco-friendly light-emitting technologies based on perovskite semiconductors.
Project description:To achieve high-performance perovskite light-emitting diodes (PeLEDs), an appropriate functional layer beneath the perovskite emissive layer is significantly important to modulate the morphology of the perovskite film and to facilitate charge injection and transport in the device. Herein, for the first time, we report efficient n-i-p structured PeLEDs using solution-processed SnO2 as an electron transport layer. Three-dimensional perovskites, such as CH(NH2)2PbI3 and CH3NH3PbI3, are found to be more chemically compatible with SnO2 than with commonly used ZnO. In addition, SnO2 shows good transparency, excellent morphology and suitable energy levels. These properties make SnO2 a promising candidate in both three- and low-dimensional PeLEDs, among which a high external quantum efficiency of 7.9% has been realized. Furthermore, interfacial materials that are widely used to improve the device performances of ZnO-based PeLEDs are also applied on SnO2-based PeLEDs and their effects have been systematically studied. In contrast to ZnO, SnO2 modified by these interfacial materials shows detrimental effects due to photoluminescence quenching.
Project description:Although perovskite light-emitting diodes (PeLEDs) have recently experienced significant progress, there are only scattered reports of PeLEDs with both high efficiency and long operational stability, calling for additional strategies to address this challenge. Here, we develop perovskite-molecule composite thin films for efficient and stable PeLEDs. The perovskite-molecule composite thin films consist of in-situ formed high-quality perovskite nanocrystals embedded in the electron-transport molecular matrix, which controls nucleation process of perovskites, leading to PeLEDs with a peak external quantum efficiency of 17.3% and half-lifetime of approximately 100 h. In addition, we find that the device degradation mechanism at high driving voltages is different from that at low driving voltages. This work provides an effective strategy and deep understanding for achieving efficient and stable PeLEDs from both material and device perspectives.
Project description:As an effective manufacturing technology, inkjet printing is very suitable for the fabrication of perovskite light-emitting diodes in next-generation displays. However, the unsatisfied efficiency of perovskite light-emitting diode created with the use of inkjet printing impedes its development for future application. Here, we report highly efficient PeLEDs using inkjet printing, with an external quantum efficiency of 7.9%, a current efficiency of 32.0 cd/A, and the highest luminance of 2465 cd/m2; these values are among the highest values for the current efficiency of inkjet-printed PeLED in the literature. The outstanding performance of our device is due to the coffee-ring-free and uniform perovskite nanocrystal layer on the PVK layer, resulting from vacuum post-treatment and using a suitable ink. Moreover, the surface roughness and thickness of the perovskite layer are effectively controlled by adjusting the spacing of printing dots. This study makes an insightful exploration of the use of inkjet printing in PeLED fabrication, which is one of the most promising ways for future industrial production of PeLEDs.
Project description:Light-emitting diodes (LEDs) based on perovskites show great potential in lighting and display applications. However, although perovskite films with high photoluminescence quantum efficiencies are commonly achieved, the efficiencies of perovskite LEDs are largely limited by the low light out-coupling efficiency. Here, we show that high-efficiency perovskite LEDs with a high external quantum efficiency of 20.2% and an ultrahigh radiant exitance up to 114.9 mW cm-2 can be achieved by employing the microcavity effect to enhance light extraction. The enhanced microcavity effect and light out-coupling efficiency are confirmed by the study of angle-dependent emission profiles. Our results show that both the optical and electrical properties of the device need to be optimized to achieve high-performance perovskite LEDs.