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4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot.

ABSTRACT: We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi qubit platforms.

SUBMITTER: Bugu S

PROVIDER: S-EPMC8501031 | biostudies-literature | 2021 Oct

REPOSITORIES: biostudies-literature

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4.2 K sensitivity-tunable radio frequency reflectometry of a physically defined p-channel silicon quantum dot.

Bugu Sinan S Nishiyama Shimpei S Kato Kimihiko K Liu Yongxun Y Murakami Shigenori S Mori Takahiro T Ferrus Thierry T Kodera Tetsuo T

Scientific reports 20211008 1

We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2 K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflect ...[more]

PMID: 34625617

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