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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide.

ABSTRACT: Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in hafnium oxide films. When applying this method, an outstanding remanent polarization value of 2P[Formula: see text] = 47 [Formula: see text]C/cm[Formula: see text] is achieved for a 5 nm thin film. Besides the influence of Zr content on the film crystallinity, the reliability of films crystallized with this effect is explored, highlighting the controlled crystallization, excellent endurance and long-term retention.

SUBMITTER: Lederer M

PROVIDER: S-EPMC8594776 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature

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Electric field-induced crystallization of ferroelectric hafnium zirconium oxide.

Lederer Maximilian M Abdulazhanov Sukhrob S Olivo Ricardo R Lehninger David D Kämpfe Thomas T Seidel Konrad K Eng Lukas M LM

Scientific reports 20211115 1

Ferroelectricity in crystalline hafnium oxide thin films is strongly investigated for the application in non-volatile memories, sensors and other applications. Especially for back-end-of-line (BEoL) integration the decrease of crystallization temperature is of major importance. However, an alternative method for inducing ferroelectricity in amorphous or semi-crystalline hafnium zirconium oxide films is presented here, using the newly discovered effect of electric field-induced crystallization in ...[more]

PMID: 34782687

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