Browse
Submit Data
Databases
API
Help

Dataset Information

35 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Thermal Conductivity of Large-Area Polycrystalline MoSe₂ Films Grown by Chemical Vapor Deposition.

ABSTRACT: It is of great importance to understand the thermal properties of MoSe₂ films for electronic and optoelectronic applications. In this work, large-area polycrystalline MoSe₂ films are prepared using a low-cost, controllable, large-scale, and repeatable chemical vapor deposition method, which facilitates direct device fabrication. Raman spectra and X-ray diffraction patterns indicate a hexagonal (2H) crystal structure of the MoSe₂ film. Ellipsometric spectra analysis indicates that the optical band gap of the MoSe₂ film is estimated to be ∼1.23 eV. From the analysis of the temperature-dependent and laser-power-dependent Raman spectra, the thermal conductivity of the suspended MoSe₂ films is found to be ∼28.48 W/(m·K) at room temperature. The results can provide useful guidance for an effective thermal management of large-area polycrystalline MoSe₂-based electronic and optoelectronic devices.

SUBMITTER: Sun J

PROVIDER: S-EPMC8600615 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Tunability of the Superconductivity of NbSe2 Films Grown by Two-Step Vapor Deposition.

Project description:Layered metallic transition-metal dichalcogenides (TMDCs) are ideal platforms for exploring their fascinating electronic properties at two-dimensional limits, such as their charge density wave (CDW) and superconductivity. Therefore, developing ways to improve the crystallization quality of TMDCs is urgently needed. Here we report superconductively tunable NbSe2 grown by a two-step vapor deposition method. By optimizing the sputtering conditions, superconducting NbSe2 films were prepared from highly crystalline Nb films. The bilayer NbSe2 films showed a superconducting transition temperature that was up to 3.1 K. Similar to the salt-assisted chemical vapor deposition (CVD) method, superconducting monolayer NbSe2 crystals were also grown from a selenide precursor, and the growth strategy is suitable for many other TMDCs. Our growth method not only provides a way to improve the crystalline quality of TMDC films, but also gives new insight into the growth of monolayer TMDCs. It holds promise for exploring two-dimensional TMDCs in fundamental research and device applications.

| S-EPMC9921890 | biostudies-literature

Structural and electronic properties of MoS2 and MoSe2 monolayers grown by chemical vapor deposition on Au(111).

Project description:The exceptional electronic and photonic properties of the monolayers of transition metal dichalcogenides including the spin-orbit splitting of the valence and conduction bands at the K points of the Brillouin zone make them promising for novel applications in electronics, photonics and optoelectronics. Scalable growth of these materials and understanding of their interaction with the substrate is crucial for these applications. Here we report the growth of MoS2 and MoSe2 monolayers on Au(111) by chemical vapor deposition at ambient pressure as well as the analysis of their structural and electronic properties down to the atomic scale. To this aim, we apply ultrahigh vacuum surface sensitive techniques including scanning tunneling microscopy and spectroscopy, low-energy electron diffraction, X-ray and angle-resolved ultraviolet photoelectron spectroscopy in combination with Raman spectroscopy at ambient conditions. We demonstrate the growth of high-quality epitaxial single crystalline MoS2 and MoSe2 monolayers on Au(111) and show the impact of annealing on the monolayer/substrate interaction. Thus, as-grown and moderately annealed (<100 °C) MoSe2 monolayers are decoupled from the substrate by excess Se atoms, whereas annealing at higher temperatures (>250 °C) results in their strong coupling with the substrate caused by desorption of the excess Se. The MoS2 monolayers are strongly coupled to the substrate and the interaction remains almost unchanged even after annealing up to 450 °C.

| S-EPMC10729873 | biostudies-literature

Lattice Reconstruction in MoSe2-WSe2 Heterobilayers Synthesized by Chemical Vapor Deposition.

Project description:Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moiré systems with rich correlated electron phases and moiré exciton phenomena. For material combinations with small lattice mismatch and twist angles as in MoSe2-WSe2, however, lattice reconstruction eliminates the canonical moiré pattern and instead gives rise to arrays of periodically reconstructed nanoscale domains and mesoscopically extended areas of one atomic registry. Here, we elucidate the role of atomic reconstruction in MoSe2-WSe2 heterostructures synthesized by chemical vapor deposition. With complementary imaging down to the atomic scale, simulations, and optical spectroscopy methods, we identify the coexistence of moiré-type cores and extended moiré-free regions in heterostacks with parallel and antiparallel alignment. Our work highlights the potential of chemical vapor deposition for applications requiring laterally extended heterosystems of one atomic registry or exciton-confining heterostack arrays.

| S-EPMC10214437 | biostudies-literature

Rapid Growth of Monolayer MoSe2 Films for Large-Area Electronics.

Project description:The large-scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large-area monolayer MoSe2 films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe2 films up to a few inches in size are obtained within a short growth time of 5 min. The as-grown monolayer MoSe2 films are of high quality with large grain size (up to 120 μm). Arrays of field-effect transistors are fabricated from the MoSe2 films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm2 V-1 s-1 and on/off ratios of ≈105. The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large-scale applications.

| S-EPMC9473491 | biostudies-literature

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition.

Project description:High-quality WS2 film with the single domain size up to 400 ?m was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 ?m. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

| S-EPMC5626679 | biostudies-literature

Sn-Induced Phase Stabilization and Enhanced Thermal Stability of κ-Ga2O3 Grown by Mist Chemical Vapor Deposition.

Project description:Tin (Sn)-doped orthorhombic gallium oxide (κ-Ga2O3) films were grown on (0001) sapphire by mist chemical vapor deposition. It is known that κ-Ga2O3 is more stable than α-Ga2O3 (corundum) but less stable than β-Ga2O3 (monoclinic). This thermodynamic stability means an optimal growth temperature (T g) of the κ-phase (600-650 °C) is also in between the two. At first, it was observed that Sn doping induced the κ-phase during the growth of the β-phase (T g = 700 °C). Interestingly, Sn could also promote the κ-phase even under the growth condition that strongly favors the α-phase (T g = 450 °C). The postgrowth annealing tests at 800-1000 °C showed that the thermal stability of the κ-phase depends on the Sn concentration. The higher the Sn concentration, the more stable the phase. The one with the highest Sn content showed no phase transition from κ to β after annealing at 800, 900, and 1000 °C for 30 min each. This enhancement of thermal stability promises more reliable high-power and high-frequency devices for which κ-Ga2O3 is suitable. Although there was no correlation between Sn-induced phase stabilization and the crystal quality, cathodoluminescence revealed that increasing Sn concentration led to the strong suppression of the radiative recombination at 340 nm from the vacancy-related donor-acceptor pairs. This observation suggests that the phase stabilization by Sn could be related to a specific Ga site Sn replaces in the orthorhombic structure.

| S-EPMC8613876 | biostudies-literature

Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition.

Project description:Combining MoS2 monolayers to form multilayers allows to access new functionalities. Deterministic assembly of large area van der Waals structures requires concrete indicators of successful interlayer coupling in bilayers grown by chemical vapor deposition. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in both as-grown MoS2 homobilayer samples and in artificially stacked bilayers from monolayers, all grown by chemical vapor deposition. We show that hole delocalization over the bilayer is only allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about t⊥ = 49 meV. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.

| S-EPMC7220905 | biostudies-literature

Transparent and conducting boron doped ZnO thin films grown by aerosol assisted chemical vapor deposition.

Project description:ZnO based transparent conducting oxides are important as they provide an alternative to the more expensive Sn : In2O3 that currently dominates the industry. Here, we investigate B-doped ZnO thin films grown via aerosol assisted chemical vapour deposition. B : ZnO films were produced from zinc acetate and triethylborane using either tetrahydrofuran or methanol (MeOH) as the solvent. The lowest resistivity of 5.1 × 10-3 Ω cm along with a visible light transmittance of ∼75-80% was achieved when using MeOH as the solvent. XRD analysis only detected the wurtzite phase of ZnO suggesting successful solid solution formation with B3+ substituting Zn2+ sites in the lattice. Refinement of the XRD patterns showed minimal distortion to the ZnO unit cell upon doping when MeOH was the solvent due to the immiscibility of the [BEt3] solution (1.0 M solution in hexane) in methanol that limited the amount of B going into the films, thus preventing excessive doping.

| S-EPMC9671099 | biostudies-literature

Real-space imaging of acoustic plasmons in large-area graphene grown by chemical vapor deposition.

Project description:An acoustic plasmon mode in a graphene-dielectric-metal structure has recently been spotlighted as a superior platform for strong light-matter interaction. It originates from the coupling of graphene plasmon with its mirror image and exhibits the largest field confinement in the limit of a sub-nm-thick dielectric. Although recently detected in the far-field regime, optical near-fields of this mode are yet to be observed and characterized. Here, we demonstrate a direct optical probing of the plasmonic fields reflected by the edges of graphene via near-field scattering microscope, revealing a relatively small propagation loss of the mid-infrared acoustic plasmons in our devices that allows for their real-space mapping at ambient conditions even with unprotected, large-area graphene grown by chemical vapor deposition. We show an acoustic plasmon mode that is twice as confined and has 1.4 times higher figure of merit in terms of the normalized propagation length compared to the graphene surface plasmon under similar conditions. We also investigate the behavior of the acoustic graphene plasmons in a periodic array of gold nanoribbons. Our results highlight the promise of acoustic plasmons for graphene-based optoelectronics and sensing applications.

| S-EPMC7895983 | biostudies-literature

Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure.

Project description:There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300?°C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300?°C were 100%, 97.6%, and 1,900-2,500?cm(2) V(-1) s(-1), respectively. In addition, the growth temperature was substantially reduced to as low as 100?°C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

| S-EPMC4674705 | biostudies-other