Project description:Photonic integrated circuits (PICs) enable the miniaturization of optical quantum circuits because several optic and electronic functionalities can be added on the same chip. Integrated single photon emitters (SPEs) are central building blocks for such quantum photonic circuits. SPEs embedded in 2D transition metal dichalcogenides have some unique properties that make them particularly appealing for large-scale integration. Here we report on the integration of a WSe2 monolayer onto a Silicon Nitride (SiN) chip. We demonstrate the coupling of SPEs with the guided mode of a SiN waveguide and study how the on-chip single photon extraction can be maximized by interfacing the 2D-SPE with an integrated dielectric cavity. Our approach allows the use of optimized PIC platforms without the need for additional processing in the SPE host material. In combination with improved wafer-scale CVD growth of 2D materials, this approach provides a promising route towards scalable quantum photonic chips.
Project description:Single-photon emitters (SPEs) play an important role in a number of quantum information tasks such as quantum key distributions. In these protocols, telecom wavelength photons are desired due to their low transmission loss in optical fibers. In this paper, we present a study of bright single-photon emitters in cubic silicon carbide (3C-SiC) emitting in the telecom range. We find that these emitters are photostable and bright at room temperature with a count rate of ~ MHz. Altogether with the fact that SiC is a growth and fabrication-friendly material, our result may be relevant for future applications in quantum communication technology.
Project description:A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with high probability. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
Project description:Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 106 counts per second at saturation, after correcting for uncorrelated photon background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.Inhomogeneous spectral distribution and multi-photon emission are currently hindering the use of defects in layered hBN as reliable single photon emitters. Here, the authors demonstrate strain-controlled wavelength tuning and increased single photon purity through suitable material processing.
Project description:Color centers in hexagonal boron nitride (hBN) have been emerging as a multifunctional platform for various optical applications including quantum information processing, quantum computing and imaging. Simultaneously, due to its biocompatibility and biodegradability hBN is a promising material for biomedical applications. In this work, we demonstrate single-photon emission from hBN color centers embedded inside live cells and their application to cellular barcoding. The generation and internalization of multiple color centers into cells was performed via simple and scalable procedure while keeping the cells unharmed. The emission from live cells was observed as multiple diffraction-limited spots, which exhibited excellent single-photon characteristics with high single-photon purity of 0.1 and superb emission stability without photobleaching or spectral shifts over several hours. Due to different emission wavelengths and peak widths of the color centers, they were employed as barcodes. We term them Quantum Photonic Barcodes (QPBs). Each QPB can exist in one out of 470 possible distinguishable states and a combination of a few QPBs per cell can be used to uniquely tag virtually an unlimited number of cells. The barcodes developed here offer some excellent properties, including ease of production by a single-step procedure, biocompatibility and biodegradability, emission stability, no photobleaching, small size and a huge number of unique barcodes. This work provides a basis for the use of hBN color centers for robust barcoding of cells and due to the single photon emission, presented concepts could in future be extended to quantum-limited sensing and super-resolution imaging.
Project description:Graphene being a zero-gap material, considerable efforts have been made to develop semiconductors whose structure is compatible with its hexagonal lattice. Size reduction is a promising way to achieve this objective. The reduction of both dimensions of graphene leads to graphene quantum dots. Here, we report on a single-emitter study that directly addresses the intrinsic emission properties of graphene quantum dots. In particular, we show that they are efficient and stable single-photon emitters at room temperature and that their emission wavelength can be modified through the functionalization of their edges. Finally, the investigation of the intersystem crossing shows that the short triplet lifetime and the low crossing yield are in agreement with the high brightness of these quantum emitters. These results represent a step-forward in performing chemistry engineering for the design of quantum emitters.
Project description:On-chip photon sources carrying orbital angular momentum (OAM) are in demand for high-capacity optical information processing in both classical and quantum regimes. However, currently exploited integrated OAM sources have been primarily limited to the classical regime. Here, we demonstrate a room-temperature on-chip integrated OAM source that emits well-collimated single photons, with a single-photon purity of g(2)(0) ≈ 0.22, carrying entangled spin and OAM states and forming two spatially separated entangled radiation channels with different polarization properties. The OAM-encoded single photons are generated by efficiently outcoupling diverging surface plasmon polaritons excited with a deterministically positioned quantum emitter via Archimedean spiral gratings. Our OAM single-photon source platform bridges the gap between conventional OAM manipulation and nonclassical light sources, enabling high-dimensional and large-scale photonic quantum systems for quantum information processing.
Project description:We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.
Project description:An optical quantum memory is a stationary device that is capable of storing and recreating photonic qubits with a higher fidelity than any classical device. Thus far, these two requirements have been fulfilled for polarization qubits in systems based on cold atoms and cryogenically cooled crystals. Here, we report a room-temperature memory capable of storing arbitrary polarization qubits with a signal-to-background ratio higher than 1 and an average fidelity surpassing the classical benchmark for weak laser pulses containing 1.6 photons on average, without taking into account non-unitary operation. Our results demonstrate that a common vapor cell can reach the low background noise levels necessary for polarization qubit storage using single-photon level light, and propels atomic-vapor systems towards a level of functionality akin to other quantum information processing architectures.
Project description:Non-classical photon sources are a crucial resource for distributed quantum networks. Photons generated from matter systems with memory capability are particularly promising, as they can be integrated into a network where each source is used on-demand. Among all kinds of solid state and atomic quantum memories, room-temperature atomic vapours are especially attractive due to their robustness and potential scalability. To-date room-temperature photon sources have been limited either in their memory time or the purity of the photonic state. Here we demonstrate a single-photon source based on room-temperature memory. Following heralded loading of the memory, a single photon is retrieved from it after a variable storage time. The single-photon character of the retrieved field is validated by the strong suppression of the two-photon component with antibunching as low as [Formula: see text]. Non-classical correlations between the heralding and the retrieved photons are maintained for up to [Formula: see text], more than two orders of magnitude longer than previously demonstrated with other room-temperature systems. Correlations sufficient for violating Bell inequalities exist for up to τBI = (0.15 ± 0.03) ms.