Browse
Submit Data
Databases
API
Help

Dataset Information

19 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Light-activated Multilevel Resistive Switching Storage in Pt/Cs₂AgBiBr₆/ITO/Glass Devices.

ABSTRACT: High-density Cs₂AgBiBr₆ films with uniform grains were prepared by a simple one-step and low-temperature sol-gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs₂ AgBiBr₆/ITO/glass devices under irradiation of 10 mW/cm² (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs₂AgBiBr₆ layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs₂AgBiBr₆ affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs₂AgBiBr₆-based resistive switching memory devices is a promising strategy to develop high-density memory.

SUBMITTER: Zhong T

PROVIDER: S-EPMC8669091 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices.

Project description:The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal-oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e., a thermal resistive switching effect. We used frequency domain thermoreflectance to monitor the interfacial metal-oxide TBR in (Pt,Cr)/SrTiO3 devices, showing a change of ≈20% under usual SET/RESET operation voltages, depending on the structure of the device. Time-dependent thermal relaxation experiments suggest ionic rearrangement along the whole area of the metal/oxide interface, apart from the ionic filament responsible for the electrical conductivity switching. The experiments presented in this work provide valuable knowledge about oxide ion dynamics in redox-based memristive devices.

| S-EPMC10982933 | biostudies-literature

Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications.

Project description:In this paper, the resistive switching and neuromorphic behaviour of memristive devices based on parylene, a polymer both low-cost and safe for the human body, is comprehensively studied. The Metal/Parylene/ITO sandwich structures were prepared by means of the standard gas phase surface polymerization method with different top active metal electrodes (Ag, Al, Cu or Ti of ~500 nm thickness). These organic memristive devices exhibit excellent performance: low switching voltage (down to 1 V), large OFF/ON resistance ratio (up to 104), retention (≥104 s) and high multilevel resistance switching (at least 16 stable resistive states in the case of Cu electrodes). We have experimentally shown that parylene-based memristive elements can be trained by a biologically inspired spike-timing-dependent plasticity (STDP) mechanism. The obtained results have been used to implement a simple neuromorphic network model of classical conditioning. The described advantages allow considering parylene-based organic memristors as prospective devices for hardware realization of spiking artificial neuron networks capable of supervised and unsupervised learning and suitable for biomedical applications.

| S-EPMC6658497 | biostudies-literature

Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures.

Project description:Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO3/SrTiO3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.

| S-EPMC9156742 | biostudies-literature

Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer.

Project description:An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3 (HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc = 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103 after 109 switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.

| S-EPMC5387719 | biostudies-literature

Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films.

Project description:Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta2O5) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta2O5. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.

| S-EPMC10471767 | biostudies-literature

Ultrafast Excited-State Localization in Cs2AgBiBr6 Double Perovskite.

Project description:Cs2AgBiBr6 is a promising metal halide double perovskite offering the possibility of efficient photovoltaic devices based on lead-free materials. Here, we report on the evolution of photoexcited charge carriers in Cs2AgBiBr6 using a combination of temperature-dependent photoluminescence, absorption and optical pump-terahertz probe spectroscopy. We observe rapid decays in terahertz photoconductivity transients that reveal an ultrafast, barrier-free localization of free carriers on the time scale of 1.0 ps to an intrinsic small polaronic state. While the initially photogenerated delocalized charge carriers show bandlike transport, the self-trapped, small polaronic state exhibits temperature-activated mobilities, allowing the mobilities of both to still exceed 1 cm2 V-1 s-1 at room temperature. Self-trapped charge carriers subsequently diffuse to color centers, causing broad emission that is strongly red-shifted from a direct band edge whose band gap and associated exciton binding energy shrink with increasing temperature in a correlated manner. Overall, our observations suggest that strong electron-phonon coupling in this material induces rapid charge-carrier localization.

| S-EPMC8154850 | biostudies-literature

Direct, Indirect, and Self-Trapped Excitons in Cs2AgBiBr6.

Project description:Cs2AgBiBr6 exhibits promising photovoltaic and light-emitting properties, making it a candidate for next-generation solar cells and LED technologies. Additionally, it serves as a model system within the family of halide double perovskites, offering insights into a broader class of materials. Here, we study various possible excited states of this material to understand its absorption and emission properties. We use time-dependent density functional theory (TD-DFT) coupled with nonempirical hybrid functionals, specifically PBE0(α) and dielectric-dependent hybrids (DDH) to explore direct, indirect, and self-trapped excitons in this material. Based on comparison with experiment, we show that these methods can give excellent predictions of the absorption spectrum and that the fundamental band gap has been underestimated in previous computational studies. We connect the experimental photoluminescence signals at 1.9-2.0 eV to the emission from self-trapped excitons and electron polarons. Finally, we reveal a complex landscape with energetically competing direct, indirect, and self-trapped excitons in the material.

| S-EPMC11345835 | biostudies-literature

Highly mobile hot holes in Cs2AgBiBr6 double perovskite.

Project description:Highly mobile hot charge carriers are a prerequisite for efficient hot carrier optoelectronics requiring long-range hot carrier transport. However, hot carriers are typically much less mobile than cold ones because of carrier-phonon scattering. Here, we report enhanced hot carrier mobility in Cs2AgBiBr6 double perovskite. Following photoexcitation, hot carriers generated with excess energy exhibit boosted mobility, reaching an up to fourfold enhancement compared to cold carriers and a long-range hot carrier transport length beyond 200 nm. By optical pump–infrared push-terahertz probe spectroscopy and frequency-resolved photoconductivity measurements, we provide evidence that the conductivity enhancement originates primarily from hot holes with reduced momentum scattering. We rationalize our observation by considering (quasi-)ballistic transport of thermalized hot holes with energies above an energetic threshold in Cs2AgBiBr6. Our findings render Cs2AgBiBr6 as a fascinating platform for studying the fundamentals of hot carrier transport and its exploitation toward hot carrier–based optoelectronic devices.

| S-EPMC8694595 | biostudies-literature

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory.

Project description:A major challenge of resistive switching memory (resistive random access memory (RRAM)) for future application is how to reduce the fluctuation of the resistive switching parameters. In this letter, with a statistical methodology, we have systematically analyzed the reset statistics of the conductive bridge random access memory (CBRAM) with a Cu/HfO2/Pt structure which displays bipolar switching property. The experimental observations show that the distributions of the reset voltage (V reset) and reset current (I reset) are greatly influenced by the initial on-state resistance (R on) which is closely related to the size of the conductive filament (CF) before the reset process. The reset voltage increases and the current decreases with the on-state resistance, respectively, according to the scatter plots of the experimental data. Using resistance screening method, the statistical data of the reset voltage and current are decomposed into several ranges and the distributions of them in each range are analyzed by the Weibull model. Both the Weibull slopes of the reset voltage and current are demonstrated to be independent of the on-state resistance which indicates that no CF dissolution occurs before the reset point. The scale factor of the reset voltage increases with on-state resistance while that of the reset current decreases with it. These behaviors are fully in consistency with the thermal dissolution model, which gives an insight on the physical mechanism of the reset switching. Our work has provided an inspiration on effectively reducing the variation of the switching parameters of RRAM devices.

| S-EPMC4493841 | biostudies-literature

Point contact resistive switching memory based on self-formed interface of Al/ITO.

Project description:Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.

| S-EPMC4935939 | biostudies-literature