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Optical-Field-Driven Electron Tunneling in Metal-Insulator-Metal Nanojunction.

ABSTRACT: Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip "lightwave electronics." Here, the empirical findings on photocurrent the high nonlinearity in metal-insulator-metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. In the present MIM device, a 14th power-law scaling is identified, never achieved before in any known solid-state device. This work lays important technological foundations for the development of a new generation of ultracompact and ultrafast electronics devices that operate with suboptical-cycle response times.

SUBMITTER: Zhou S

PROVIDER: S-EPMC8693043 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature

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Optical-Field-Driven Electron Tunneling in Metal-Insulator-Metal Nanojunction.

Zhou Shenghan S Guo Xiangdong X Chen Ke K Cole Matthew Thomas MT Wang Xiaowei X Li Zhenjun Z Dai Jiayu J Li Chi C Dai Qing Q

Advanced science (Weinheim, Baden-Wurttemberg, Germany) 20211027 24

Optical-field driven electron tunneling in nanojunctions has made demonstrable progress toward the development of ultrafast charge transport devices at subfemtosecond time scales, and have evidenced great potential as a springboard technology for the next generation of on-chip "lightwave electronics." Here, the empirical findings on photocurrent the high nonlinearity in metal-insulator-metal (MIM) nanojunctions driven by ultrafast optical pulses in the strong optical-field regime are reported. I ...[more]

PMID: 34708551

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