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Phase Change Ge-Rich Ge-Sb-Te/Sb₂Te₃ Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition.

ABSTRACT: Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge-Sb-Te/Sb₂Te₃ core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge-Sb-Te nanowires were self-assembled through the vapor-liquid-solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO₂/Si substrates; conformal overgrowth of the Sb₂Te₃ shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge-Sb-Te core and Ge-rich Ge-Sb-Te/Sb₂Te₃ core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

SUBMITTER: Kumar A

PROVIDER: S-EPMC8707013 | biostudies-literature |

REPOSITORIES: biostudies-literature

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