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Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe2N4 van der Waals Heterostructures.


ABSTRACT: van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.

SUBMITTER: Wang J 

PROVIDER: S-EPMC8709393 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature

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Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe<sub>2</sub>N<sub>4</sub> van der Waals Heterostructures.

Wang Jiali J   Zhao Xiuwen X   Hu Guichao G   Ren Junfeng J   Yuan Xiaobo X  

Nanomaterials (Basel, Switzerland) 20211208 12


van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe<sub>2</sub>N<sub>4</sub> vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te<sub>4</sub>-MoSTe/MoGe<sub>2</sub>N<sub>4</sub> vdWH is a semimetal, while S<sub>4</sub>-MoSTe/  ...[more]

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