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Modeling electronic and optical properties of III-V quantum dots-selected recent developments.


ABSTRACT: Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1-xGax AsySb1-y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.

SUBMITTER: Mittelstadt A 

PROVIDER: S-EPMC8761749 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature

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Modeling electronic and optical properties of III-V quantum dots-selected recent developments.

Mittelstädt Alexander A   Schliwa Andrei A   Klenovský Petr P  

Light, science & applications 20220117 1


Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In<sub>1-x</sub>Ga<sub>x</sub> As<sub>y</sub>Sb<sub>1-y</sub>/GaP QDs, and second, the theor  ...[more]

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