Browse
Submit Data
Databases
API
Help

Dataset Information

19 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Reducing Threading Dislocations of Single-Crystal Diamond via In Situ Tungsten Incorporation.

ABSTRACT: A lower dislocation density substrate is essential for realizing high performance in single-crystal diamond electronic devices. The in-situ tungsten-incorporated homoepitaxial diamond by introducing tungsten hexacarbonyl has been proposed. A 3 × 3 × 0.5 mm³ high-pressure, high-temperature (001) diamond substrate was cut into four pieces with controlled experiments. The deposition of tungsten-incorporated diamond changed the atomic arrangement of the original diamond defects so that the propagation of internal dislocations could be inhibited. The SEM images showed that the etching pits density was significantly decreased from 2.8 × 10⁵ cm^-2 to 2.5 × 10³ cm^-2. The reduction of XRD and Raman spectroscopy FWHM proved that the double-layer tungsten-incorporated diamond has a significant effect on improving the crystal quality of diamond bulk. These results show the evident impact of in situ tungsten-incorporated growth on improving crystal quality and inhibiting the dislocations propagation of homoepitaxial diamond, which is of importance for high-quality diamond growth.

SUBMITTER: Wang R

PROVIDER: S-EPMC8778734 | biostudies-literature |

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

The heterogeneous nucleation of threading dislocations on partial dislocations in III-nitride epilayers.

Project description:III-nitride compound semiconductors are breakthrough materials regarding device applications. However, their heterostructures suffer from very high threading dislocation (TD) densities that impair several aspects of their performance. The physical mechanisms leading to TD nucleation in these materials are still not fully elucidated. An overlooked but apparently important mechanism is their heterogeneous nucleation on domains of basal stacking faults (BSFs). Based on experimental observations by transmission electron microscopy, we present a concise model of this phenomenon occurring in III-nitride alloy heterostructures. Such domains comprise overlapping intrinsic I1 BSFs with parallel translation vectors. Overlapping of two BSFs annihilates most of the local elastic strain of their delimiting partial dislocations. What remains combines to yield partial dislocations that are always of screw character. As a result, TD nucleation becomes geometrically necessary, as well as energetically favorable, due to the coexistence of crystallographically equivalent prismatic facets surrounding the BSF domain. The presented model explains all observed BSF domain morphologies, and constitutes a physical mechanism that provides insight regarding dislocation nucleation in wurtzite-structured alloy epilayers.

| S-EPMC7566635 | biostudies-literature

Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells.

Project description:The compositional and structural investigations of threading dislocations (TDs) in InGaN/GaN multiple quantum wells were carried out using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). The correlative TEM/APT analysis on the same TD reveals that the indium atoms are diffused along the TD and its concentration decreases with distance from the InGaN layer. On the basis of the results, we directly observed that the indium atoms originating from the InGaN layer diffuse toward the epitaxial GaN surface through the TD, and it is considered to have occurred via the pipe diffusion mechanism induced by strain energy relaxation.

| S-EPMC9480092 | biostudies-literature

Specific incorporation of chalcogenide bridge atoms in molybdenum/tungsten-iron-sulfur single cubane clusters.

Project description:An extensive series of heterometal-iron-sulfur single cubane-type clusters with core oxidation levels [MFe(3)S(3)Q](3+,2+) (M = Mo, W; Q = S, Se) has been prepared by means of a new method of cluster self-assembly. The procedure utilizes the assembly system [((t)Bu(3)tach)M(VI)S(3)]/FeCl(2)/Na(2)Q/NaSR in acetonitrile/THF and affords product clusters in 30-50% yield. The trisulfido precursor acts as a template, binding Fe(II) under reducing conditions and supplying the MS(3) unit of the product. The system leads to specific incorporation of a μ(3)-chalcogenide from an external source (Na(2)Q) and affords the products [((t)Bu(3)tach)MFe(3)S(3)QL(3)](0/1-) (L = Cl(-), RS(-)), among which are the first MFe(3)S(3)Se clusters prepared. Some 16 clusters have been prepared, 13 of which have been characterized by X-ray structure determinations including the incomplete cubane [((t)Bu(3)tach)MoFe(2)S(3)Cl(2)(μ(2)-SPh)], a possible trapped intermediate in the assembly process. Comparisons of structural and electronic features of clusters differing only in atom Q at one cubane vertex are provided. In comparative pairs of complexes differing only in Q, placement of one selenide atom in the core increases core volumes by about 2% over the Q = S case, sets the order Q = Se > S in Fe-Q bond lengths and Q = S > Se in Fe-Q-Fe bond angles, causes small positive shifts in redox potentials, and has an essentially nil effect on (57)Fe isomer shifts. Iron mean oxidation states and charge distributions are assigned to most clusters from isomer shifts. ((t)Bu(3)tach = 1,3,5-tert-butyl-1,3,5-triazacyclohexane).

| S-EPMC3215104 | biostudies-literature

Effect of Threading Dislocations on the Electronic Structure of La-Doped BaSnO3 Thin Films.

Project description:In spite of great application potential as transparent n-type oxides with high electrical mobility at room temperature, threading dislocations (TDs) often found in the (Ba,La)SnO3 (BLSO) films can limit their intrinsic properties so that their role in the physical properties of BLSO films need to be properly understood. The electrical properties and electronic structure of BLSO films grown on SrTiO3 (001) (STO) and BaSnO3 (001) (BSO) substrates are comparatively studied to investigate the effect of the TDs. In the BLSO/STO films with TD density of ~1.32 × 1011 cm-2, n-type carrier density ne and electron mobility are significantly reduced, as compared with the BLSO/BSO films with nearly no TDs. This indicates that TDs play the role of scattering-centers as well as acceptor-centers to reduce n-type carriers. Moreover, in the BLSO/STO films, both binding energies of an Sn 3d core level and a valence band maximum are reduced, being qualitatively consistent with the Fermi level shift with the reduced n-type carriers. However, the reduced binding energies of the Sn 3d core level and the valence band maximum are clearly different as 0.39 and 0.19 eV, respectively, suggesting that the band gap renormalization preexisting in proportion to ne is further suppressed to restore the band gap in the BLSO/STO films with the TDs.

| S-EPMC9000141 | biostudies-literature

Crystallographic anisotropy of the resistivity size effect in single crystal tungsten nanowires.

Project description:This work demonstrates an anisotropic increase in resistivity with decreasing width in single crystal tungsten (W) nanowires having a height of 21 nm. Nanowire-widths were in the range of 15-451 nm, with the anisotropy observed for widths below 50 nm. The longitudinal directions of the nanowires coincided with the <100>, <110> and <111> orientations of the body centered cubic phase of W. The resistivity increase was observed to be minimized for the <111>-oriented single crystal nanowires, exhibiting a factor of two lower increase in resistivity at a width of ~15 nm, relative to the thin film resistivity (i.e., an infinitely wide wire). The observed anisotropy is attributed to crystallographic anisotropy of the Fermi velocity and the resultant anisotropy of the electron mean free path in W, and underscores the critical role of crystallographic orientation in nanoscale metallic conduction.

| S-EPMC3763248 | biostudies-literature

Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates.

Project description:The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts were selectively fabricated on screw- and mixed-TD-related etch pits classified based on the pit size. Current-voltage (I-V) data acquired using conductive atomic force microscopy showed that very few of the screw TDs generated anomalously large reverse leakage currents. An analysis of the temperature dependence of the I-V characteristics established that the leakage current conduction mechanisms for the leaky screw TDs differed from those for the other screw and mixed TDs. Specifically, anomalous current leakage was generated by Poole-Frenkel emission and trap-assisted tunneling via distinctive trap states together with Fowler-Nordheim tunneling, with the mechanism changing according to variations in temperature and applied voltage. The leaky TDs were identified as Burgers vector b = 1c closed-core screw TDs having a helical morphology similar to that of other screw TDs generating small leakage currents. Based on the results, we proposed that the atomic-scale modification of the dislocation core structure related to interactions with point defects via dislocation climbing caused different leakage characteristics of the TDs.

| S-EPMC9918472 | biostudies-literature

Single crystal toroidal diamond anvils for high pressure experiments beyond 5 megabar.

Project description:Static compression experiments over 4 Mbar are rare, yet critical for developing accurate fundamental physics and chemistry models, relevant to a range of topics including modeling planetary interiors. Here we show that focused ion beam crafted toroidal single-crystal diamond anvils with ~9.0 μm culets are capable of producing pressures over 5 Mbar. The toroidal surface prevents gasket outflow and provides a means to stabilize the central culet. We have reached a maximum pressure of ~6.15 Mbar using Re as in situ pressure marker, a pressure regime typically accessed only by double-stage diamond anvils and dynamic compression platforms. Optimizing single-crystal diamond anvil design is key for extending the pressure range over which studies can be performed in the diamond anvil cell.

| S-EPMC6120914 | biostudies-literature

Combined X-ray and neutron single-crystal diffraction in diamond anvil cells.

Project description:It is shown that it is possible to perform combined X-ray and neutron single-crystal studies in the same diamond anvil cell (DAC). A modified Merrill-Bassett DAC equipped with an inflatable membrane filled with He gas has been developed. It can be used on laboratory X-ray and synchrotron diffractometers as well as on neutron instruments. The data processing procedures and a joint structural refinement of the high-pressure synchrotron and neutron single-crystal data are presented and discussed for the first time.

| S-EPMC6998780 | biostudies-literature

Single-Crystal-to-Single-Crystal Anion Exchange in a Gadolinium MOF: Incorporation of POMs and [AuCl₄].

Project description:The encapsulation of functional molecules inside porous coordination polymers (also known as metal-organic frameworks, MOFs) has become of great interest in recent years at the field of multifunctional materials. In this article, we present a study of the effects of size and charge in the anion exchange process of a Gd based MOF, involving molecular species like polyoxometalates (POMs), and [AuCl₄]-. This post-synthetic modification has been characterized by IR, EDAX, and single crystal diffraction, which have provided unequivocal evidence of the location of the anion molecules in the framework.

| S-EPMC6431858 | biostudies-other

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities.

Project description:In spite of the theoretical advantages associated with nitride microcavities, the quality factors of devices with embedded indium gallium nitride (InGaN) or gallium nitride (GaN) optical emitters still remain low. In this work we identify threading dislocations (TDs) as a major limitation to the fabrication of high quality factor devices in the nitrides. We report on the use of cathodoluminescence (CL) to identify individual TD positions within microdisk lasers containing either InGaN quantum wells or quantum dots. Using CL to accurately count the number, and map the position, of dislocations within several individual cavities, we have found a clear correlation between the density of defects in the high-field region of a microdisk and its corresponding quality factor (Q). We discuss possible mechanisms associated with defects, photon scattering, and absorption, which could be responsible for degraded device performance.

| S-EPMC4372119 | biostudies-other

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data