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Nanospike electrodes and charge nanoribbons: A new design for nanoscale thin-film transistors.

ABSTRACT: To scale down thin-film transistor (TFT) channel lengths for accessing higher levels of speed and performance, a redesign of the basic device structure is necessary. With nanospike-shaped electrodes, field-emission effects can be used to assist charge injection from the electrodes in sub-200-nm channel length amorphous oxide and organic TFTs. These designs result in the formation of charge nanoribbons at low gate biases that greatly improve subthreshold and turn-off characteristics. A design paradigm in which the gate electric field can be less than the source-drain field is proposed and demonstrated. By combining small channel lengths and thick gate dielectrics, this approach is also shown to be a promising solution for boosting TFT performance through charge focusing and charge nanoribbon formation in flexible/printed electronics applications.

SUBMITTER: Liang K

PROVIDER: S-EPMC8797182 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature

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Nanospike electrodes and charge nanoribbons: A new design for nanoscale thin-film transistors.

Liang Kelly K Xu Xin X Zhou Yuchen Y Wang Xiao X McCulley Calla M CM Wang Liang L Kulkarni Jaydeep J Dodabalapur Ananth A

Science advances 20220128 4

To scale down thin-film transistor (TFT) channel lengths for accessing higher levels of speed and performance, a redesign of the basic device structure is necessary. With nanospike-shaped electrodes, field-emission effects can be used to assist charge injection from the electrodes in sub-200-nm channel length amorphous oxide and organic TFTs. These designs result in the formation of charge nanoribbons at low gate biases that greatly improve subthreshold and turn-off characteristics. A design par ...[more]

PMID: 35089782

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