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Pressure-induced high-spin/low-spin disproportionated state in the Mott insulator FeBO3.


ABSTRACT: The pressure-induced Mott insulator-to-metal transitions are often accompanied by a collapse of magnetic interactions associated with delocalization of 3d electrons and high-spin to low-spin (HS-LS) state transition. Here, we address a long-standing controversy regarding the high-pressure behavior of an archetypal Mott insulator FeBO3 and show the insufficiency of a standard theoretical approach assuming a conventional HS-LS transition for the description of the electronic properties of the Mott insulators at high pressures. Using high-resolution x-ray diffraction measurements supplemented by Mössbauer spectroscopy up to pressures ~ 150 GPa, we document an unusual electronic state characterized by a "mixed" HS/LS state with a stable abundance ratio realized in the [Formula: see text] crystal structure with a single Fe site within a wide pressure range of ~ 50-106 GPa. Our results imply an unconventional cooperative (and probably dynamical) nature of the ordering of the HS/LS Fe sites randomly distributed over the lattice, resulting in frustration of magnetic moments.

SUBMITTER: Xu W 

PROVIDER: S-EPMC9187741 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

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Pressure-induced high-spin/low-spin disproportionated state in the Mott insulator FeBO<sub>3</sub>.

Xu Weiming W   Dong Weiwei W   Layek Samar S   Shulman Mark M   Glazyrin Konstantin K   Bykova Elena E   Bykov Maxim M   Hanfland Michael M   Pasternak Moshe P MP   Leonov Ivan I   Greenberg Eran E   Rozenberg Gregory Kh GK  

Scientific reports 20220610 1


The pressure-induced Mott insulator-to-metal transitions are often accompanied by a collapse of magnetic interactions associated with delocalization of 3d electrons and high-spin to low-spin (HS-LS) state transition. Here, we address a long-standing controversy regarding the high-pressure behavior of an archetypal Mott insulator FeBO<sub>3</sub> and show the insufficiency of a standard theoretical approach assuming a conventional HS-LS transition for the description of the electronic properties  ...[more]

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