Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Transport properties of MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions tuned by bias and gate voltages† † Electronic supplementary information (ESI) available. See https://doi.org/10.1039/d2ra02196j

ABSTRACT: The MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions are designed and the transport properties of their four-terminal devices are comparatively investigated based on density functional theory (DFT) and the nonequilibrium Green's function (NEGF) technique. The MoS2 and graphene nanoribbons act as the source-to-drain channel and the spin-polarized one-dimensional (1D) benzene–V multidecker complex nanowire (V7(Bz)8) serves as the gate channel. Gate voltages applied on V7(Bz)8 exert different influences of electron transport on MoS2/V7(Bz)8 and graphene/V7(Bz)8. In MoS2/V7(Bz)8, the interplay of source and gate bias potentials could induce promising properties such as negative differential resistance (NDR) behavior, output/input current switching, and spin-polarized currents. In contrast, the gate bias plays an insignificant effect on the transport along graphene in graphene/V7(Bz)8. This dissimilarity is attributed to the fact that the conductivity follows the sequence of MoS2 < V7(Bz)8 < graphene. These transport characteristics are examined by analyzing the conductivity, the currents, the local density of states (LDOS), and the transmission spectra. These results are valuable in designing multi-terminal nanoelectronic devices. The bias and gate voltages can tune different spin-polarized transport properties in novel four-terminal MoS2/V7(Bz)8 and graphene/V7(Bz)8 vdW junctions.

SUBMITTER: Yu H

PROVIDER: S-EPMC9189623 | biostudies-literature | 2022 Jun

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Similar Datasets

Environment-insensitive and gate-controllable photocurrent enabled by bandgap engineering of MoS2 junctions.

Project description:Two-dimensional (2D) materials are composed of atomically thin crystals with an enormous surface-to-volume ratio, and their physical properties can be easily subjected to the change of the chemical environment. Encapsulation with other layered materials, such as hexagonal boron nitride, is a common practice; however, this approach often requires inextricable fabrication processes. Alternatively, it is intriguing to explore methods to control transport properties in the circumstance of no encapsulated layer. This is very challenging because of the ubiquitous presence of adsorbents, which can lead to charged-impurity scattering sites, charge traps, and recombination centers. Here, we show that the short-circuit photocurrent originated from the built-in electric field at the MoS2 junction is surprisingly insensitive to the gaseous environment over the range from a vacuum of 1 × 10-6 Torr to ambient condition. The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous environment. The observation of environment-insensitive short-circuit photocurrent demonstrates an alternative method to design device structure for 2D-material-based optoelectronic applications.

| S-EPMC5359557 | biostudies-literature

Strain forces tuned the electronic and optical properties in GaTe/MoS2 van der Waals heterostructures.

Project description:Two-dimensional (2D) van der Waals heterostructures (vdWHs) have attracted widespread attention in fundamental materials science and device physics. In this work, we report a novel GaTe/MoS2 vdWH and theoretically investigate the electronic and optical properties based on first-principles calculations. GaTe/MoS2 vdWH possesses an indirect band gap with type-II band alignment. Meanwhile, the interfacial charge transfer from MoS2 to GaTe can effectively separate electrons and holes. Also, this vdWH shows improved visible-ultraviolet optical absorption properties compared with those of the isolated GaTe or MoS2 monolayers. More remarkably, the biaxial strain can not only modulate the band gap but also enhance the optical performance in GaTe/MoS2 vdWH. In particular, the tensile strain is more effective for improving the optical absorption in the visible light region. These findings indicate that GaTe/MoS2 vdWH is a promising candidate for nanoelectronics and optoelectronic devices.

| S-EPMC9055235 | biostudies-literature

Gate-tuned graphene meta-devices for dynamically controlling terahertz wavefronts.

Project description:Dynamical controls on terahertz (THz) wavefronts are crucial for many applications, but available mechanism requests tunable elements with sub-micrometer sizes that are difficult to find in the THz regime. Here, different from the local-tuning mechanism, we propose an alternative approach to construct wavefront-control meta-devices combining specifically designed metasurfaces and globally tuned graphene layers. Coupled-mode-theory (CMT) analyses reveal that graphene serves as a tunable loss to drive the whole meta-device to transit from one functional phase to another passing through an intermediate regime, exhibiting distinct far-field (FF) reflection wavefronts. As a proof of concept, we design/fabricate a graphene meta-device and experimentally demonstrate that it can reflect normally incident THz wave to pre-designed directions with different polarizations under appropriate gating voltages. We finally design a graphene meta-device and numerically demonstrate that it can generate vectorial THz beams with continuously varying polarization distributions upon gating. These findings pave the road to realizing a wide range of THz applications, such as sensing, imaging, and wireless communications.

| S-EPMC11501680 | biostudies-literature

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions.

Project description:For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

| S-EPMC5071831 | biostudies-literature

Gate Tunable Transport in Graphene/MoS₂/(Cr/Au) Vertical Field-Effect Transistors.

Project description:Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. In the present study, we fabricate graphene/MoS₂/(Cr/Au) vertical transistor based on the mechanical exfoliation and dry transfer method. Since the bottom electrode was made of monolayer graphene (Gr), the electrical transport in our Gr/MoS₂/(Cr/Au) vertical transistors can be significantly modified by using back-gate voltage. Schottky barrier height at the interface between Gr and MoS₂ can be modified by back-gate voltage and the current bias. Vertical resistance (Rvert) of a Gr/MoS₂/(Cr/Au) transistor is compared with planar resistance (Rplanar) of a conventional lateral MoS₂ field-effect transistor. We have also studied electrical properties for various thicknesses of MoS₂ channels in both vertical and lateral transistors. As the thickness of MoS₂ increases, Rvert increases, but Rplanar decreases. The increase of Rvert in the thicker MoS₂ film is attributed to the interlayer resistance in the vertical direction. However, Rplanar shows a lower value for a thicker MoS₂ film because of an excess of charge carriers available in upper layers connected directly to source/drain contacts that limits the conduction through layers closed to source/drain electrodes. Hence, interlayer resistance associated with these layers contributes to planer resistance in contrast to vertical devices in which all layers contribute interlayer resistance.

| S-EPMC5791101 | biostudies-literature

Sequence preference and structural heterogeneity of BZ junctions.

Project description:BZ junctions, which connect B-DNA to Z-DNA, are necessary for local transformation of B-DNA to Z-DNA in the genome. However, the limited information on the junction-forming sequences and junction structures has led to a lack of understanding of the structural diversity and sequence preferences of BZ junctions. We determined three crystal structures of BZ junctions with diverse sequences followed by spectroscopic validation of DNA conformation. The structural features of the BZ junctions were well conserved regardless of sequences via the continuous base stacking through B-to-Z DNA with A-T base extrusion. However, the sequence-dependent structural heterogeneity of the junctions was also observed in base step parameters that are correlated with steric constraints imposed during Z-DNA formation. Further, circular dichroism and fluorescence-based analysis of BZ junctions revealed that a base extrusion was only found at the A-T base pair present next to a stable dinucleotide Z-DNA unit. Our findings suggest that Z-DNA formation in the genome is influenced by the sequence preference for BZ junctions.

| S-EPMC6212838 | biostudies-literature

Dataset of optical and electronic properties for MoS2-graphene vertical heterostructures and MoS2-graphene-Au heterointerfaces.

Project description:The computational and experimental data presented in this paper refer to the research article "First-Principles Calculations Integrated with Experimental Optical and Electronic Properties for MoS2-graphene Heterostructures and MoS2-graphene-Au Heterointerfaces". The computational data includes structural information, electronic and optical properties, and data to calculate the work functions for various molybdenum disulfide and graphene heterostructures and their heterointerfaces with gold. The optical properties calculations include the frequency-dependent dielectric function, the refractive index, the reflectivity, the extinction coefficient, and the energy loss function. These properties were calculated using the independent particle approximation (IPA). As for the experimental optoelectronic properties, we measured photoluminescence spectra (optical), Raman spectra (vibrational), work function (surface electronic property), and local photoconductivity (semiconducting behavior) of graphene-MoS2 heterointerfaces in addition to individual graphene and MoS2 layers on gold. The variation in the exciton bands, the Raman bands, and in the average work function elucidated the semiconducting n-p junction behavior.

| S-EPMC10439301 | biostudies-literature

Selective Laser-Assisted Direct Synthesis of MoS2 for Graphene/MoS2 Schottky Junction.

Project description:Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS2 on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS2 were vertically stacked using a laser-based photothermal reaction demonstrated its potential application as a photodetector that responds to light and its stability against cycling. The laser-based photothermal-reaction method for 2D materials will be further applied to various fields, such as transparent display electrodes, photodetectors, and solar cells, in the future.

| S-EPMC10674199 | biostudies-literature

Side Gate Tunable Josephson Junctions at the LaAlO3/SrTiO3 Interface.

Project description:Novel physical phenomena arising at the interface of complex oxide heterostructures offer exciting opportunities for the development of future electronic devices. Using the prototypical LaAlO3/SrTiO3 interface as a model system, we employ a single-step lithographic process to realize gate-tunable Josephson junctions through a combination of lateral confinement and local side gating. The action of the side gates is found to be comparable to that of a local back gate, constituting a robust and efficient way to control the properties of the interface at the nanoscale. We demonstrate that the side gates enable reliable tuning of both the normal-state resistance and the critical (Josephson) current of the constrictions. The conductance and Josephson current show mesoscopic fluctuations as a function of the applied side gate voltage, and the analysis of their amplitude enables the extraction of the phase coherence and thermal lengths. Finally, we realize a superconducting quantum interference device in which the critical currents of each of the constriction-type Josephson junctions can be controlled independently via the side gates.

| S-EPMC5343548 | biostudies-literature

Transport Property of Wrinkled Graphene Nanoribbon Tuned by Spin-Polarized Gate Made of Vanadium-Benzene Nanowire.

Project description:A series of four-terminal V7(Bz)8-WGNR devices were established with wrinkled graphene nanoribbon (WGNR) and vanadium-benzene nanowire (V7(Bz)8). The spin-polarized V7(Bz)8 as the gate channel was placed crossing the plane, the concave (endo-positioned) and the convex (endo-positioned) surface of WGNR with different curvatures via Van der Waals interaction. The density functional theory (DFT) and nonequilibrium Green's function (NEGF) methods were adopted to calculate the transport properties of these devices at various bias voltages (VS) and gate voltages (VG), such as the conductance, spin-polarized currents, transmission spectra (TS), local density of states (LDOS), and scattering states. The results indicate that the position of V7(Bz)8 and the bending curvature of WGNR play important roles in tuning the transport properties of these four-terminal devices. A spin-polarized transport property is induced for these four-terminal devices by the spin-polarized nature of V7(Bz)8. Particularly, the down-spin channel disturbs strongly on the source-to-drain conductance of WGNR when V7(Bz)8 is endo-positioned crossing the WGNR. Our findings on the novel property of four-terminal V7(Bz)8-WGNR devices provide useful guidelines for achieving flexible graphene-based electronic nanodevices by attaching other similar multidecker metal-arene nanowires.

| S-EPMC10421401 | biostudies-literature

OmicsDI is part of the ELIXIR infrastructure

OmicsDI is an Elixir interoperability service. Learn more ›

Tweets

OmicsDI Databases

PRIDE
PeptideAtlas
MassIVE
JPOST Repository
Physiome Model Repository

EGA
EVA
ENA
LINCS
PAXDB
Cell Collective

MetaboLights
Metabolomics Workbench
MetabolomeExpress
GNPS
BioModels
FAIRDOMHub

ArrayExpress
dbGaP
ExpressionAtlas
GEO
NODE

Information

Databases
Help
API
Contact us
Code on GitHub
Terms of use
Submit Data